PHILIPS BFT25 Npn 2 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFT25
NPN 2 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
November 1992
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
DESCRIPTION
BFT25
PINNING
NPN transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current
consumption (100 µA to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.
PIN
DESCRIPTION
Code: V1p
1
base
2
emitter
3
collector
3
fpage
1
2
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
8
V
VCEO
collector-emitter voltage
open base
−
5
V
Ic
DC collector current
−
6.5
mA
Ptot
total power dissipation
up to Ts = 167 °C; note 1
−
30
mW
fT
transition frequency
IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb = 25 °C
2.3
−
GHz
Cre
feedback capacitance
IC = 1 mA; VCE = 1 V; f = 1 MHz;
Tamb = 25 °C
−
0.45
pF
GUM
maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb = 25 °C
18
−
dB
F
noise figure
3.8
−
dB
IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
8
V
VCEO
collector-emitter voltage
open base
−
5
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
DC collector current
−
6.5
mA
ICM
peak collector current
f > 1 MHz
−
10
mA
Ptot
total power dissipation
up to Ts = 167 °C; note 1
−
30
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector tab.
November 1992
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
THERMAL RESISTANCE
up to Ts = 167°C; note 1
260 K/W
Note
1. Ts = is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
CONDITIONS
MIN.
TYP.
IE = 0; VCB = 5 V
−
−
MAX.
50
UNIT
nA
IC = 10 µA; VCE = 1 V
20
30
−
IC = 1 mA; VCE = 1 V
20
40
−
IC = 1 mA; VCE = 1 V; f = 500 MHz
1.2
2.3
−
GHz
fT
transition frequency
Cc
collector capacitance
IE = ie = 0; VCB = 0.5 V; f = 1 MHz
−
−
0.6
pF
Ce
emitter capacitance
Ic = ic = 0; VEB = 0; f = 1 MHz
−
−
0.5
pF
Cre
feedback capacitance
IC = 1 mA; VCE = 1 V; f = 1 MHz;
Tamb = 25 °C
−
−
0.45
pF
GUM
maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz;
(note 1)
Tamb = 25 °C
−
18
−
dB
IC = 1 mA; VCE = 1 V; f = 800 MHz;
Tamb = 25 °C
−
12
−
dB
IC = 0.1 mA; VCE = 1 V;
f = 500 MHz; Tamb = 25 °C
−
5.5
−
dB
IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb = 25 °C
−
3.8
−
dB
F
noise figure
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2 
2
1
–
S
1
–
S

11  
22 
November 1992
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
MEA914
MEA908
1
60
handbook, halfpage
Cc
(pF)
h FE
0.8
40
0.6
0.4
20
0.2
0
10 –3
10 –2
10 –1
0
1
I C (mA)
0
10
2
4
VCE = 1 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current.
6
8
Collector capacitance as a function of
collector-base voltage.
MEA907
3
10
V CB (V)
MEA909
8
handbook, halfpage
handbook, halfpage
F
(dB)
fT
(GHz)
6
2
4
1
2
0
0
0.5
1
1.5
0
10 –2
2
I C (mA)
10 –1
1
I C (mA)
VCE = 1 V; f = 500 MHz; Tj = 25 °C.
VCE = 1 V; ZS = opt.; f = 500 MHz; Tamb = 25 °C.
Fig.4
Fig.5
Transition frequency as a function of
collector current.
November 1992
4
10
Minimum noise figure as a function of
collector current.
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0.2
0
0.5
1
2
5
–j
10
∞
200
10
500
800 MHz
0.2
5
2
0.5
MEA916
1
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.6 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
120°
500
150°
60°
800 MHz
30°
200
+ϕ
1
180°
2
3
0°
−ϕ
30°
150°
60°
120°
90°
MEA918
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
Fig.7 Common emitter forward transmission coefficient (S21).
November 1992
5
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
90°
handbook, full pagewidth
120°
60°
800 MHz
150°
30°
500
200
+ϕ
0.05
180°
0.1
0.15
0°
−ϕ
30°
150°
60°
120°
MEA917
90°
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
Fig.8 Common emitter reverse transmission coefficient (S12).
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
10
–j
∞
200
10
500
5
0.2
800 MHz
2
0.5
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
Zo = 50 Ω.
1
MEA915
Fig.9 Common emitter output reflection coefficient (S22).
November 1992
6
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
November 1992
EUROPEAN
PROJECTION
7
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1992
8
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