DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PIN DESCRIPTION Code: V1p 1 base 2 emitter 3 collector 3 fpage 1 2 Top view MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 8 V VCEO collector-emitter voltage open base − 5 V Ic DC collector current − 6.5 mA Ptot total power dissipation up to Ts = 167 °C; note 1 − 30 mW fT transition frequency IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C 2.3 − GHz Cre feedback capacitance IC = 1 mA; VCE = 1 V; f = 1 MHz; Tamb = 25 °C − 0.45 pF GUM maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C 18 − dB F noise figure 3.8 − dB IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 8 V VCEO collector-emitter voltage open base − 5 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 6.5 mA ICM peak collector current f > 1 MHz − 10 mA Ptot total power dissipation up to Ts = 167 °C; note 1 − 30 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 2 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point THERMAL RESISTANCE up to Ts = 167°C; note 1 260 K/W Note 1. Ts = is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current hFE DC current gain CONDITIONS MIN. TYP. IE = 0; VCB = 5 V − − MAX. 50 UNIT nA IC = 10 µA; VCE = 1 V 20 30 − IC = 1 mA; VCE = 1 V 20 40 − IC = 1 mA; VCE = 1 V; f = 500 MHz 1.2 2.3 − GHz fT transition frequency Cc collector capacitance IE = ie = 0; VCB = 0.5 V; f = 1 MHz − − 0.6 pF Ce emitter capacitance Ic = ic = 0; VEB = 0; f = 1 MHz − − 0.5 pF Cre feedback capacitance IC = 1 mA; VCE = 1 V; f = 1 MHz; Tamb = 25 °C − − 0.45 pF GUM maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; (note 1) Tamb = 25 °C − 18 − dB IC = 1 mA; VCE = 1 V; f = 800 MHz; Tamb = 25 °C − 12 − dB IC = 0.1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C − 5.5 − dB IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C − 3.8 − dB F noise figure Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 1 – S 11 22 November 1992 3 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 MEA914 MEA908 1 60 handbook, halfpage Cc (pF) h FE 0.8 40 0.6 0.4 20 0.2 0 10 –3 10 –2 10 –1 0 1 I C (mA) 0 10 2 4 VCE = 1 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 DC current gain as a function of collector current. 6 8 Collector capacitance as a function of collector-base voltage. MEA907 3 10 V CB (V) MEA909 8 handbook, halfpage handbook, halfpage F (dB) fT (GHz) 6 2 4 1 2 0 0 0.5 1 1.5 0 10 –2 2 I C (mA) 10 –1 1 I C (mA) VCE = 1 V; f = 500 MHz; Tj = 25 °C. VCE = 1 V; ZS = opt.; f = 500 MHz; Tamb = 25 °C. Fig.4 Fig.5 Transition frequency as a function of collector current. November 1992 4 10 Minimum noise figure as a function of collector current. Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 –j 10 ∞ 200 10 500 800 MHz 0.2 5 2 0.5 MEA916 1 IC = 1 mA; VCE = 1 V; Tamb = 25 °C. Zo = 50 Ω. Fig.6 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 120° 500 150° 60° 800 MHz 30° 200 +ϕ 1 180° 2 3 0° −ϕ 30° 150° 60° 120° 90° MEA918 IC = 1 mA; VCE = 1 V; Tamb = 25 °C. Fig.7 Common emitter forward transmission coefficient (S21). November 1992 5 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 90° handbook, full pagewidth 120° 60° 800 MHz 150° 30° 500 200 +ϕ 0.05 180° 0.1 0.15 0° −ϕ 30° 150° 60° 120° MEA917 90° IC = 1 mA; VCE = 1 V; Tamb = 25 °C. Fig.8 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 –j ∞ 200 10 500 5 0.2 800 MHz 2 0.5 IC = 1 mA; VCE = 1 V; Tamb = 25 °C. Zo = 50 Ω. 1 MEA915 Fig.9 Common emitter output reflection coefficient (S22). November 1992 6 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 November 1992 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1992 8