Bulletin I27102 rev. C 05/02 IRK. SERIES MAGN-A-pak Power Modules SCR / SCR and SCR / DIODE Features High voltage Electrically isolated base plate 170A 230A 250A 3000 V RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved Description This new IRK serie of MAGN-A-paks modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, U.P.S., etc.). Major Ratings and Characteristics Parameters IRK.170.. IT(AV) @ 85°C 170 IT(RMS) ITSM 2 I t 230 250 A 377 510 555 A @ 50Hz 5100 7500 8500 A @ 60Hz 5350 7850 8900 A @ 50Hz 131 280 361 KA2s @ 60Hz 119 256 330 KA2s 1310 2800 3610 KA2√s 2 I √t VDRM / VRRM TJ IRK.230.. IRK.250.. Units range www.irf.com Up to1600 Up to 2000 Up to1600 -40 to 130 V o C 1 IRK.170, .230, .250 Series Bulletin I27102 rev. C 05/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code VRRMVDRM , maximum repetitive peak reverse and off-state blocking voltage V VRSM , maximum non-repetitive peak reverse voltage IRRM IDRM max @ 130°C V mA 04 08 12 14 16 400 800 1200 1400 1600 500 900 1300 1500 1700 50 08 12 16 18 20 800 1200 1600 1800 2000 900 1300 1700 1900 2100 50 IRK.170IRK.250- IRK.230- On-state Conduction Parameters IT(AV) Maximum average on-state current @ Case temperature IRK.170 IRK.230 IRK.250 Units Conditions 170 230 250 85 85 85 A 180o conduction, half sine wave C o IT(RMS) Maximum RMS on -state current 377 510 555 A as AC switch ITSM 5100 5350 7500 7850 8500 8900 A t = 10ms No voltage t = 8.3ms reapplied Maximum peak, one-cycle on-state, non-repetitive surge current 4300 6300 7150 t = 10ms 4500 6600 7500 t = 8.3ms reapplied 131 280 361 119 92.5 256 198 330 255 84.4 1310 181 2800 233 3610 VT(TO)1Low level value of threshold voltage 0.89 1.03 0.97 VT(TO)2High level value of threshold voltage 1.12 1.07 1.00 Low level on-state slope resistance 1.34 0.77 0.60 I2t I2√t rt1 Maximum I2t for fusing Maximum I2√t for fusing KA2s t = 10ms 100% VRRM Sinusoidal half wave, No voltage initial TJ = TJ max t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2√s t = 0.1 to 10ms, no voltage reapplied V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. rt2 High level on-state slope resistance 0.96 0.73 0.57 VTM Maximum on-state voltage drop 1.60 1.59 1.44 IH Maximum holding current 500 500 500 mA Anode supply=12V, initial IT=30A, TJ=25oC IL Maximum latching current 1000 1000 1000 Anode supply=12V, resistive load=1Ω gate pulse: 10V, 100µs, TJ = 25°C V ITM = π x IT(AV), TJ = TJ max., 180o conduction Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2 Switching Parameters 2 IRK.170 IRK.230 IRK.250 Units Conditions td Typical delay time 1.0 tr Typical rise time 2.0 tq Typical turn-off time 50 - 150 µs TJ = 25oC, Gate Current=1A dIg/dt=1A/µs Vd = 0,67% VDRM µs ITM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ; Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm www.irf.com IRK.170, .230, .250 Series Bulletin I27102 rev. C 05/02 Blocking Parameters IRK.170 IRK.230 IRK.250 Units Conditions IRRM Max. peak reverse and off-state 50 mA TJ =TJ max. IDRM leakage current VINS RMS isolation voltage 3000 dv/dt Critical rate of rise of off-state voltage 1000 V 50Hz, circuit to base, all termin. shorted, 25°C,1s V/µs TJ = TJ max, exponential to 67% rated VDRM Triggering Parameters I PGM IRK.170 IRK.230 IRK.250 Units Conditions Maximum peak gate power PG(AV) Maximum average gate power 10.0 W tp ≤ 5ms, TJ = TJ max. 2.0 W f = 50Hz, TJ = TJ max. +IGM Maximum peak gate current 3.0 A tp ≤ 5ms, TJ = TJ max. -VGT Max. peak negative gate voltage 5.0 V tp ≤ 5ms, TJ = TJ max. VGT Maximum required DC gate 4.0 V TJ = - 40 C Anode supply = 12V, resistive voltage to trigger 3.0 V TJ = 25oC load ; Ra = 1Ω 2.0 V Maximum required DC gate 350 mA TJ = - 40oC Anode supply = 12V, resistive current to trigger 200 mA TJ = 25oC load ; Ra = 1Ω 100 mA TJ = TJ max. 0.25 V IGT VGD Maximum gate voltage that will not trigger IGD Maximum gate current that will not trigger Max rate of rise of turned-on current di/dt o TJ = TJ max. @ TJ= TJ max., rated VDRM applied 10.0 mA @ TJ= TJ max., rated VDRM applied 500 A/µs @ TJ= TJ max., ITM = 400 A rated VDRM applied Thermal and Mechanical Specifications Parameters IRK.170 IRK.230 IRK.250 Units Conditions TJ Junction operating temperature -40 to 130 o Tstg Storage temperature range -40 to 150 o RthJC Maximum thermal resistance junction to case RthC-S Thermal resistance, case to heatsink T C C 0.17 0.125 0.125 K/W Per junction, DC operation 0.02 0.02 0.02 K/W Mounting tourque ±10% Mounting surface flat, smooth and greased (per module) A mounting compound is recommended and the MAP to heatsink 4 to 6 Nm tourque should be rechecked after a period of Busbar to MAP 4 to 6 Nm about 3 hours to allow for the spread of the compound wt Approximate weight Case style www.irf.com 500 g 17.8 oz MAGN-A-pak 3 IRK.170, .230, .250 Series Bulletin I27102 rev. C 05/02 ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Sinusoidal conduction @ TJ max. Devices Rectangular conduction @ TJ max. 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o IRK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 IRK.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 IRK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033 Units K/W MAGN-A-paks Suitable for Current Source Inverters Thyristor VDRM Diode VRRM VRSM @ 85°C @ 85°C @ 85°C 1500 2000 IRKH170-14D20 IRKH230-14D20 IRKH250-14D20 VRRM 1400 IT(AV) / IF(AV) @ TC VRSM 170A 230A 250A 1400 1500 2000 IRKL170-14D20 IRKL230-14D20 IRKL250-14D20 1600 1700 2500 IRKH170-16D25 IRKH230-16D25 IRKH250-16D25 IRKL250-16D25 1600 1700 2500 IRKL170-16D25 IRKL230-16D25 1800 1900 2800 Not Available IRKH230-18D28 Not Available 1800 1900 2800 Not Available IRKL230-18D28 Not Available 2000 2100 3200 Not Available IRKH230-20D32 Not Available 2000 2100 3200 Not Available IRKL230-20D32 Not Available For all other parameters and characteristics refer to standard IRKH... and IRKL... modules. Application Notes Current Source Inverters Current-Source Inverters (also known as Sequentially Commutated Inverters) use Phase Control (as opposed to Fast) Thyristors and Diodes. 3xIRKL... M 3xIRKH... 3xIRKT... The advantages of Current Source Inverters lie in their ease control, absence of large commutation inductances and limited fault currents. Their simple construction, illustrated by the circuit on the left, is further enhanced by the use of MAGN-Apaks which allow the power circuit of an Inverter to be realised with 6 capacitors and 9 MAGN-A-paks all mounted on just one heatsink. The optimal design of Current Source Inverters requires the use of Diodes with blocking voltages greater than those of the thyristors . This departure from conventional half-bridge modules is catered for by MAGN-A-pak range with Thyristors up to 2000V and Diodes up to 3200V. Current Source Inverter using 9 MAGN-A-paks 4 www.irf.com IRK.170, .230, .250 Series Bulletin I27102 rev. C 05/02 Ordering Information Table Device Code 1 2 3 4 5 - IRK T 250 1 2 3 - 14 D20 4 5 Module type Circuit configuration (See Outline Table) Current rating Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) Current Source Inverters Types Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 IRKT... IRKH... IRKL... IRKU... IRKV... IRKK... IRKN... NOTE: To order the Optional Hardware see Bulletin I27900 www.irf.com 5 IRK.170, .230, .250 Series Bulletin I27102 rev. C 05/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 05/02 6 www.irf.com