IRF IRKT250-14D20 Scr / scr and scr / diode Datasheet

Bulletin I27102 rev. C 05/02
IRK. SERIES
MAGN-A-pak
 Power Modules
SCR / SCR and SCR / DIODE
Features
High voltage
Electrically isolated base plate
170A
230A
250A
3000 V RMS isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
Description
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They
can be interconnected to form single phase or three
phase bridges or as AC-switches when modules are
connected in anti-parallel mode.
These modules are intended for general purpose applications such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, U.P.S., etc.).
Major Ratings and Characteristics
Parameters
IRK.170..
IT(AV) @ 85°C
170
IT(RMS)
ITSM
2
I t
230
250
A
377
510
555
A
@ 50Hz
5100
7500
8500
A
@ 60Hz
5350
7850
8900
A
@ 50Hz
131
280
361
KA2s
@ 60Hz
119
256
330
KA2s
1310
2800
3610
KA2√s
2
I √t
VDRM / VRRM
TJ
IRK.230.. IRK.250.. Units
range
www.irf.com
Up to1600 Up to 2000 Up to1600
-40 to 130
V
o
C
1
IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
VRRMVDRM , maximum
repetitive peak reverse and
off-state blocking voltage
V
VRSM , maximum non-repetitive
peak reverse voltage
IRRM IDRM max
@ 130°C
V
mA
04
08
12
14
16
400
800
1200
1400
1600
500
900
1300
1500
1700
50
08
12
16
18
20
800
1200
1600
1800
2000
900
1300
1700
1900
2100
50
IRK.170IRK.250-
IRK.230-
On-state Conduction
Parameters
IT(AV) Maximum average on-state current
@ Case temperature
IRK.170 IRK.230 IRK.250 Units Conditions
170
230
250
85
85
85
A
180o conduction, half sine wave
C
o
IT(RMS) Maximum RMS on -state current
377
510
555
A
as AC switch
ITSM
5100
5350
7500
7850
8500
8900
A
t = 10ms No voltage
t = 8.3ms reapplied
Maximum peak, one-cycle on-state,
non-repetitive surge current
4300
6300
7150
t = 10ms
4500
6600
7500
t = 8.3ms reapplied
131
280
361
119
92.5
256
198
330
255
84.4
1310
181
2800
233
3610
VT(TO)1Low level value of threshold voltage
0.89
1.03
0.97
VT(TO)2High level value of threshold voltage
1.12
1.07
1.00
Low level on-state slope resistance
1.34
0.77
0.60
I2t
I2√t
rt1
Maximum I2t for fusing
Maximum I2√t for fusing
KA2s t = 10ms
100% VRRM
Sinusoidal half wave,
No voltage initial TJ = TJ max
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
KA2√s t = 0.1 to 10ms, no voltage reapplied
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
rt2
High level on-state slope resistance
0.96
0.73
0.57
VTM
Maximum on-state voltage drop
1.60
1.59
1.44
IH
Maximum holding current
500
500
500
mA Anode supply=12V, initial IT=30A, TJ=25oC
IL
Maximum latching current
1000
1000
1000
Anode supply=12V, resistive load=1Ω
gate pulse: 10V, 100µs, TJ = 25°C
V
ITM = π x IT(AV), TJ = TJ max., 180o conduction
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2
Switching
Parameters
2
IRK.170 IRK.230 IRK.250 Units Conditions
td
Typical delay time
1.0
tr
Typical rise time
2.0
tq
Typical turn-off time
50 - 150
µs
TJ = 25oC, Gate Current=1A dIg/dt=1A/µs
Vd = 0,67% VDRM
µs
ITM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ;
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
www.irf.com
IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
Blocking
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
IRRM Max. peak reverse and off-state
50
mA TJ =TJ max.
IDRM leakage current
VINS RMS isolation voltage
3000
dv/dt Critical rate of rise of off-state voltage
1000
V
50Hz, circuit to base, all termin. shorted, 25°C,1s
V/µs TJ = TJ max, exponential to 67% rated VDRM
Triggering
Parameters
I PGM
IRK.170 IRK.230 IRK.250 Units Conditions
Maximum peak gate power
PG(AV) Maximum average gate power
10.0
W
tp ≤ 5ms,
TJ = TJ max.
2.0
W
f = 50Hz,
TJ = TJ max.
+IGM
Maximum peak gate current
3.0
A
tp ≤ 5ms,
TJ = TJ max.
-VGT
Max. peak negative gate voltage
5.0
V
tp ≤ 5ms,
TJ = TJ max.
VGT
Maximum required DC gate
4.0
V
TJ = - 40 C
Anode supply = 12V, resistive
voltage to trigger
3.0
V
TJ = 25oC
load ; Ra = 1Ω
2.0
V
Maximum required DC gate
350
mA
TJ = - 40oC
Anode supply = 12V, resistive
current to trigger
200
mA
TJ = 25oC
load ; Ra = 1Ω
100
mA
TJ = TJ max.
0.25
V
IGT
VGD
Maximum gate voltage
that will not trigger
IGD
Maximum gate current
that will not trigger
Max rate of rise of
turned-on current
di/dt
o
TJ = TJ max.
@ TJ= TJ max., rated VDRM applied
10.0
mA @ TJ= TJ max., rated VDRM applied
500
A/µs @ TJ= TJ max., ITM = 400 A rated VDRM applied
Thermal and Mechanical Specifications
Parameters
IRK.170 IRK.230 IRK.250 Units Conditions
TJ
Junction operating temperature
-40 to 130
o
Tstg
Storage temperature range
-40 to 150
o
RthJC Maximum thermal resistance
junction to case
RthC-S Thermal resistance, case to heatsink
T
C
C
0.17
0.125
0.125
K/W Per junction, DC operation
0.02
0.02
0.02
K/W
Mounting tourque ±10%
Mounting surface flat, smooth and greased
(per module)
A mounting compound is recommended and the
MAP to heatsink
4 to 6
Nm tourque should be rechecked after a period of
Busbar to MAP
4 to 6
Nm about 3 hours to allow for the spread of the
compound
wt
Approximate weight
Case style
www.irf.com
500
g
17.8
oz
MAGN-A-pak
3
IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction @ TJ max.
Devices
Rectangular conduction @ TJ max.
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
IRK.170-
0.009
0.010
0.010
0.020
0.032
0.007
0.011
0.015
0.020
0.033
IRK.230-
0.009
0.010
0.010
0.020
0.032
0.007
0.011
0.015
0.020
0.033
IRK.250-
0.009
0.010
0.014
0.020
0.032
0.007
0.011
0.015
0.020
0.033
Units
K/W
MAGN-A-paks Suitable for Current Source Inverters
Thyristor
VDRM
Diode
VRRM
VRSM
@ 85°C
@ 85°C
@ 85°C
1500
2000
IRKH170-14D20
IRKH230-14D20
IRKH250-14D20
VRRM
1400
IT(AV) / IF(AV) @ TC
VRSM
170A
230A
250A
1400
1500
2000
IRKL170-14D20
IRKL230-14D20
IRKL250-14D20
1600
1700
2500
IRKH170-16D25
IRKH230-16D25
IRKH250-16D25
IRKL250-16D25
1600
1700
2500
IRKL170-16D25
IRKL230-16D25
1800
1900
2800
Not Available
IRKH230-18D28
Not Available
1800
1900
2800
Not Available
IRKL230-18D28
Not Available
2000
2100
3200
Not Available
IRKH230-20D32
Not Available
2000
2100
3200
Not Available
IRKL230-20D32
Not Available
For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.
Application Notes
Current Source Inverters
Current-Source Inverters (also known as Sequentially
Commutated Inverters) use Phase Control (as opposed to Fast) Thyristors and Diodes.
3xIRKL...
M
3xIRKH...
3xIRKT...
The advantages of Current Source Inverters lie in their
ease control, absence of large commutation inductances and limited fault currents.
Their simple construction, illustrated by the circuit on
the left, is further enhanced by the use of MAGN-Apaks which allow the power circuit of an Inverter to be
realised with 6 capacitors and 9 MAGN-A-paks all
mounted on just one heatsink.
The optimal design of Current Source Inverters requires the use of Diodes with blocking voltages greater
than those of the thyristors .
This departure from conventional half-bridge modules
is catered for by MAGN-A-pak range with Thyristors up
to 2000V and Diodes up to 3200V.
Current Source Inverter using 9 MAGN-A-paks
4
www.irf.com
IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
Ordering Information Table
Device Code
1
2
3
4
5
-
IRK
T
250
1
2
3
-
14 D20
4
5
Module type
Circuit configuration (See Outline Table)
Current rating
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
Current Source Inverters Types
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
IRKT...
IRKH...
IRKL...
IRKU...
IRKV...
IRKK...
IRKN...
NOTE: To order the Optional Hardware see Bulletin I27900
www.irf.com
5
IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/02
6
www.irf.com
Similar pages