IXYS IXGH36N60A3D4 600v genx3 igbts next generation 600v igbts for power conversion application Datasheet

IXYS
POWER
Efficiency through Technology
NEW
600V GenX3™ IGBTs
PRO D UC T
next generation 600V IGBTs for power conversion applications
january 2009
OVERVIEW
IXYS extends its GenX3TM insulated gate bipolar transistor (IGBT) product line to
600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM
IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored
to provide higher surge current capabilities, lower saturation voltages, and lower
switching losses.
To accommodate optimum part selection, designers have a choice in selecting
between three sub-classes denoted A3, B3, and C3. These classifications allow
designers to “dial in” the best compromise between static (conduction) and
dynamic (switching) losses, improving over-all system efficiency in a variety of
power conversion applications by balancing critical requirements such as switching
frequency, efficiency, and cost structure. The A3-Class are optimized for low
saturation voltage V(sat) and are well suited for applications requiring switching
frequencies up to 5kHz. Similarly, the B3-Class offers low saturation voltages, but
is optimized to accommodate applications that require “medium speed” switching
operation from 5kHz to 40kHz. The C3-Class is optimized for “high speed” switching
operation from 40kHz to 100kHz and resonant switching operation of up to
400kHz.
IXYS 600V GenX3TM IGBTs are offered in various standard packages, including the
full gamut of surface mount and discrete packages with current ratings from 36
amperes to 210 amperes. Furthermore, some devices will be offered in PLUS and
ISOPLUS isolated packages, featuring UL recognized 2500V isolation and superior
thermal performance. Co-Packed variants of these new devices are available with
IXYS’ HiPerFREDTM ultra-fast recovery diodes providing exceptional fast recovery
and soft switching characteristics.
These IGBTs are designed to achieve the optimal solution in applications such as
power inverters, UPS, motor drives, SMPS, PFC, battery chargers, welding machines,
lamp ballasts, inrush current protection circuits and DC choppers.
www.ixys.com
B R I EF
ISOPLUSTM Packages with Internal Alumina DCB Isolation*
DCB
Ceramic
Bond wires
Copper
Copper
Solder
Leads
Chip
Mould
ƒƒ
Provides 2500V, UL recognized isolation with superior thermal performance (E153432).
ƒƒ
Improves termperature and power cycling capability.
ƒƒ
Cost effective clip mounting.
* IXYS Patented Packages, Patent No. 6,404,065
* For information regarding IXYS ISoPLUS packages, visit http://www.ixys.com/IXAN0022.pdf
600V GenX3TM (A3) IGBTs Summary Table
A3-Class
n
Ultra low V(sat) IGBTs
n
Up to 5khz
The switching and conduction losses for the A3-Class are optimized for sub-5kHz switching frequency applications.
Performance improvements for this classification include up to a 16% reduction in saturation voltage Vce(sat) compared to
prior generation product.
Vces
(V)
Ic @ Tc = 110oC
(A)
Vce (sat) TJ = 25oC
(V)
tfi typ
(ns)
Eoff typ
(mJ)
RthJC
(oC/W)
Package
IXGP36N60A3
IXGH36N60A3
600
600
36
36
1.4
1.4
325
325
3
3
0.56
0.56
TO-220
TO-247
IXGH36N60A3D4
600
36
1.4
325
3
0.56
TO-247
IXGA36N60A3
IXGR64N60A3
IXGP48N60A3
IXGH48N60A3
IXGH48N60A3D1
IXGA48N60A3
600
600
600
600
600
600
36
47
48
48
48
48
1.4
1.35
1.35
1.35
1.35
1.35
325
222
224
224
224
224
3
3.28
2.9
2.9
2.9
2.9
0.56
0.62
0.42
0.42
0.42
0.42
TO-263
ISOPLUS247
TO-220
TO-247
TO-247
TO-263
IXGR72N60A3
IXGR72N60A3U1
IXGH64N60A3
IXGT64N60A3
IXGH72N60A3
IXGH72N60A3
IXGT72N60A3
IXGX120N60A3
IXGN120N60A3
IXGN120N60A3D1
IXGK120N60A3
IXGN320N60A3
IXGN400N60A3
IXGX320N60A3
IXGK320N60A3
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
52
52
64
64
72
72
72
120
120
120
120
170
190
210
210
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.25
1.25
1.25
1.25
250
250
222
222
250
250
250
260
260
260
260
740
270
740
740
3.5
3.5
3.28
3.28
3.5
3.5
3.5
6.6
6.6
6.6
6.6
na
na
na
na
0.62
0.62
0.27
0.27
0.23
0.23
0.23
0.16
0.21
0.21
0.16
0.17
0.15
0.125
0.125
ISOPLUS247
ISOPLUS247
TO-247
TO-268
TO-247
TO-247
TO-268
PLUS247
SOT-227B
SOT-227B
TO-264
SOT-227B
SOT-227
PLUS247
TO-264
Part Number
600V GenX3TM (B3) IGBTs Summary Table
B3-Class
n
Medium Speed IGBTs
n
Up to 40kHz
The switching and conduction losses for the B3-Class are optimized for up to 40kHz. Performance improvements were incorporated to
yield up to 22% lower turn-off energy per pulse (Eoff) and 10% lower thermal resistance to improve power handling.
Part Number
Vces
(V)
Ic @ Tc = 110oC
(A)
Vce (sat) TJ = 25oC
(V)
tfi typ
(ns)
Eoff typ
(mJ)
RthJC
(oC/W)
Package
IXGR48N60B3
IXGR48N60B3D1
IXGH36N60B3D1
600
600
600
27
27
36
2.1
2.1
1.8
116
116
100
0.66
0.66
0.8
0.83
0.83
0.5
ISOPLUS247
ISOPLUS247
TO-247
IXGH36N60B3D4
IXGP48N60B3
IXGH48N60B3D1
IXGH48N60B3
IXGA48N60B3
600
600
600
600
600
36
48
48
48
48
1.8
1.8
1.8
1.8
1.8
100
116
116
116
116
0.8
0.66
0.66
0.66
0.66
0.5
0.42
0.42
0.42
0.42
TO-247
TO-220
TO-247
TO-247
TO-263
IXGH56N60B3D1
IXGX64N60B3D1
IXGH64N60B3
IXGK64N60B3D1
IXGT64N60B3
IXGX72N60B3H1
IXGH72N60B3
IXGK72N60B3H1
IXGT72N60B3
IXGL200N60B3
IXGH90N60B3
IXGX120N60B3
IXGK120N60B3
IXGB200N60B3
IXGN200N60B3
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
56
64
64
64
64
72
72
72
72
90
90
120
120
200
200
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.5
1.8
1.8
1.8
1.5
1.5
95
88
88
88
88
92
92
92
92
183
148
145
145
183
183
1.05
1
1
1
1
1
1
1
1
2.9
1.37
3.5
3.5
2.9
2.9
0.375
0.27
0.27
0.27
0.27
0.23
0.23
0.23
0.23
0.31
0.19
0.16
0.16
0.1
0.15
TO-247
PLUS247
TO-247
TO-264
TO-268
PLUS247
TO-247
TO-264
TO-268
ISOPLUS264
TO-247
PLUS247
TO-264 AA
PLUS264
SOT-227B
600V GenX3TM (C3) IGBTs Summary Table
C3-Class
n
High Speed IGBTs
n
Up to 100kHz
The switching and conduction losses for the C3-Class are optimized for switching frequencies up to 100khz. The C3-Class performance
improvements include up to a 12% decrease in thermal resistance for improved power handling and also include up to 22% lower turn-off
energy per pulse (Eoff) for significantly lower switching losses versus prior generation of high speed IGBTs.
Part Number
Vces
(V)
Ic @ Tc = 110oC
(A)
Vce (sat) TJ = 25oC
(V)
tfi typ
(ns)
Eoff typ
(mJ)
RthJC
(oC/W)
Package
IXGR48N60C3D1
IXGP30N60C3
IXGH30N60C3D1
IXGA30N60C3
IXGR72N60C3D1
IXGP48N60C3
IXGH48N60C3
IXGH48N60C3D1
IXGA48N60C3
IXGH60N60C3
IXGH60N60C3D1
IXGX72N60C3H1
IXGH72N60C3
600
600
600
600
600
600
600
600
600
600
600
600
600
26
30
30
30
35
48
48
48
48
60
60
72
72
2.7
3
3
3
2.7
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
38
47
47
47
55
38
38
38
38
55
55
55
55
0.23
0.09
0.09
0.09
0.48
0.23
0.23
0.23
0.23
0.42
0.42
0.48
0.48
1
0.56
0.56
0.56
0.62
0.42
0.42
0.42
0.42
0.33
0.33
0.23
0.23
ISOPLUS 247
TO-220
TO-247
TO-263
ISOPLUS 247
TO-220
TO-247
TO-247
TO-263
TO-247
TO-247
PLUS247
TO-247
Applications
ƒƒ
ƒƒ
ƒƒ
ƒƒ
ƒƒ
ƒƒ
ƒƒ
Features
Power inverters
Uninterruptible power supplies
Motor drives
Switch mode power supplies
Power factor correction circuits
Welding machines
Lamp ballasts
ƒƒ
ƒƒ
ƒƒ
ƒƒ
Optimized for low switching &
conduction losses
Square RBSOA
High current handling capability
International standard packages
Benefits
ƒƒ
ƒƒ
High power density
Low gate drive requirement
Multi-Process High Frequency Inverter Welder
L1
230VAC
D1
Power Stage
Full Bridge Inverter
D5
Rectifier
Power
Factor
Correction
Boost
Converter
D2
Q2
The figure on the left illustrates a general circuit
topology of an inverter welding power source. This
Q4
circuit topology is composed of four stages: A) Rectifier
Q1
stage, B) PFC & Boost stage, C) Power stage, and D)
C1
D3
D4
Output stage. Input power from a power grid enters
PFC
Controller
Q3
Q5
the rectification stage to be rectified to a DC value
and is processed via a power factor correction boost
converter. From there it enters the power stage which
Gate Drive
Controller
Output Stage
Vout+
employs a full bridge inverter to convert the voltage
Step Down
Transformer
D6
back to AC at high frequencies typically from 50Khz
L2
R1
to 100Khz. The AC signal is then stepped down via T1
C4
R2
Work Clamp
C3
C2
transformer which then gets rectified and smoothed
D7
C5
out at the output stage.
AC Motor Drive (Resonant DC Link Inverter)
The figure on the right illustrates an AC motor
drive that utilizes a resonant DC link inverter. A
C1
Q7
resonant link (L1, C2) is affixed to the DC bus line
of a pulse width modulation inverter. The resonant
L1
link is then ‘excited’ and maintains resonance
Q1
through the control of the IGBTs in a way that
the resonating dc voltage bus frequently reaches
3-Phase AC
zero volts. The IGBTs are turned on and off at
zero voltage and are synchronized to match the
Vs
Q3
Q5
Motor
C2
Q2
Q4
Q6
zero voltage crossings to achieve the desired low
switching loss. An active clamp circuit (Q7, C1) is
added to clamp down unwanted overshoot when
Gate Drive Controller
the DC inverter current decreases abruptly caused
by the switching behavior of the IGBTs.
January 2009
www.ixys.com
PB60IGBTA3B3C3 1.4
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