AUIRLR3110Z
AUIRLU3110Z
Features
l
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Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
Description
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
k
I-Pak
AUIRLU3110Z
D-Pak
AUIRLR3110Z
Specifically designed for Automotive applications, thi
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
100V
11mΩ
14mΩ
63A
42A
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
c
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
d
c
h
g
Units
k
k
63
45
42
250
140
0.95
±16
110
140
See Fig.12a, 12b, 15, 16
A
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300
10 lbf in (1.1N m)
y
y
Thermal Resistance
RθJC
RθJA
RθJA
2014-8-24
j
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
i
1
Typ.
Max.
Units
–––
–––
–––
1.05
40
110
°C/W
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AUIRLR/U3110Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
gfs
IDSS
IGSS
Min.
Typ.
Max.
100
–––
–––
–––
1.0
52
–––
–––
–––
–––
–––
0.077
11
12
–––
–––
–––
–––
–––
–––
–––
–––
14
16
2.5
–––
20
250
200
-200
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Units
Conditions
V
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 38A
VGS = 4.5V, ID = 32A
V
VDS = VGS, ID = 100μA
S
VDS = 25V, ID = 38A
μA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 16V
VGS = -16V
e
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
34
10
15
24
110
33
48
4.5
48
–––
–––
–––
–––
–––
–––
–––
nC
ns
nH
ID = 38A
VDS = 50V
VGS = 4.5V
VDD = 50V
ID = 38A
RG = 3.7Ω
VGS = 4.5V
Between lead,
e
e
D
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
3980
310
130
1820
170
320
–––
–––
–––
–––
–––
–––
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
pF
G
S
f
Source-Drain Ratings and Characteristics
Min.
Typ.
Max.
IS
Continuous Source Current
Parameter
–––
–––
63
Units
ISM
(Body Diode)
Pulsed Source Current
–––
–––
250
showing the
integral reverse
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.3
51
63
p-n junction diode.
TJ = 25°C, IS = 38A, VGS = 0V
TJ = 25°C, IF = 38A, VDD = 50V
di/dt = 100A/μs
A
c
–––
–––
–––
–––
34
42
Conditions
MOSFET symbol
V
ns
nC
D
G
e
S
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.16mH,RG = 25Ω,
IAS = 38A, VGS =10V. Part not recommended for use above this
value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
2014-8-24
2
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material).
Rθ is measured at TJ approximately 90°C.
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 42A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
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AUIRLR/U3110Z
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
3L-D PAK
MSL1
3L-I PAK
N/A
Machine Model
ESD
††
†††
Class M4(+/- 700V )
(per AEC-Q101-002)
Human Body Model
†††
Class H1C(+/- 2000V )
(per AEC-Q101-001)
Charged Device
Model
†††
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
RoHS Compliant
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
2014-8-24
3
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AUIRLR/U3110Z
1000
1000
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
1
0.1
2.5V
BOTTOM
10
2.5V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.01
0.1
1
10
1
100
0.1
1000
Fig 1. Typical Output Characteristics
10
100
1000
Fig 2. Typical Output Characteristics
1000
150
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
T J = 175°C
100
10
T J = 25°C
1
VDS = 25V
≤60μs PULSE WIDTH
0.1
0
2
4
6
8
10
12
14
T J = 25°C
125
100
T J = 175°C
75
50
V DS = 10V
300μs PULSE WIDTH
25
0
16
0
25
50
75
ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2014-8-24
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRLR/U3110Z
100000
VGS, Gate-to-Source Voltage (V)
ID= 38A
C oss = C ds + C gd
10000
C, Capacitance(pF)
5.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Ciss
1000
Coss
Crss
100
4.0
VDS= 80V
VDS= 50V
3.0
2.0
1.0
0.0
10
1
10
0
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
T J = 175°C
T J = 25°C
1
100μsec
1msec
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1
0.1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-24
40
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
30
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
ISD, Reverse Drain Current (A)
20
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
100
10
5
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AUIRLR/U3110Z
70
ID, Drain Current (A)
60
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
Limited By Package
50
40
30
20
10
0
ID = 63A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
τ
Ri (°C/W) τi (sec)
0.383
0.000267
0.667
0.003916
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-24
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AUIRLR/U3110Z
EAS , Single Pulse Avalanche Energy (mJ)
300
15V
DRIVER
L
VDS
D.U.T
RG
VGS
20V
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
ID
4.4A
6.5A
BOTTOM 38A
TOP
250
200
150
100
50
0
25
V(BR)DSS
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
3.0
VGS(th) Gate threshold Voltage (V)
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
2.5
2.0
1.5
1.0
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
0.5
0.0
-75 -50 -25 0
L
DUT
0
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
VCC
1K
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
2014-8-24
7
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AUIRLR/U3110Z
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
150
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 38A
125
100
75
50
25
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
2014-8-24
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long as
neither Tjmax nor Iav (max) is exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRLR/U3110Z
D.U.T
Driver Gate Drive
+
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
• dv/dt controlled by R G
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power
MOSFETs
RD
V DS
V GS
D.U.T.
RG
+
- V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
2014-8-24
9
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AUIRLR/U3110Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Part Number
AULR3110Z
YWWA
Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
2014-8-24
10
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I-Pak (TO-251AA) Package Outline
AUIRLR/U3110Z
( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AULU3110Z
YWWA
Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
2014-8-24
11
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AUIRLR/U3110Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
2014-8-24
12
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AUIRLR/U3110Z
Ordering Information
Base part
Package Type
AUIRLR3110Z
DPak
AUIRLU3110Z
IPak
2014-8-24
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
13
Complete Part Number
Quantity
75
2000
3000
3000
75
AUIRLR3110Z
AUIRLR3110ZTR
AUIRLR3110ZTRL
AUIRLR3110ZTRR
AUIRLU3110Z
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