PD-97280 RevA IRAM136-1060B Series 10A, 600V Integrated Power Hybrid IC for Appliance Motor Drive Applications with Internal Shunt Resistor Description International Rectifier's IRAM136-1060B is a 10A, 600V Integrated Power Hybrid IC designed for advanced Appliance Motor Drives applications. Typical applications include energy efficient Washing Machine, Fans, Air Conditions and Refrigerator Compressor Drivers. This module offers an extremely compact, high performance AC motor-driver in an isolated package that simplifies design. Several built-in protection features such as over current, temperature monitoring, shoot through prevention and under voltage lockout makes this a very robust solution. The combination of highly efficient Trench IGBT technology and the industry benchmark 3-phase HVIC driver (3.3V/5V input compatible) and a fully isolated thermally enhanced package makes this a highly competitive solution. The compact Single in line (SIP05) package minimizes PCB space. Features x x x x x x x x x x x Internal Shunt Resistor and current feedback Integrated gate drivers and bootstrap diodes Temperature feedback Programmable over current protection pin High efficiency Trench IGBT technology Under-voltage lockout for all channels Matched propagation delay for all channels 3.3V/5V Schmitt-triggered input logic Cross-conduction prevention logic Motor Power range 0.25~0.75kW / 85~253 Vac Isolation 2000VRMS min and CTI> 600 Absolute Maximum Ratings VCES / VRRM IGBT/ FW Diode Blocking Voltage 600 V+ Io @ TC=25°C Positive Bus Input Voltage 450 RMS Phase Current (Note 1) 10 Io @ TC=100°C RMS Phase Current (Note 1) 5 Ipk Maximum Peak Phase Current (Note 2) 13 Fp Maximum PWM Carrier Frequency 20 Pd Maximum Power dissipation per IGBT @ TC =25°C 25 W VRMS VISO Isolation Voltage (1min) 2000 TJ (IGBT & Diode & IC) Maximum Operating Junction Temperature +150 TC Operating Case Temperature Range -20 to +100 TSTG Storage Temperature Range -40 to +125 T Mounting torque Range (M3 screw) 0.8 to 1.0 V A kHz °C Nm Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms, TC=25°C, FPWM=16kHz. www.irf.com 1 IRAM136-1060B Internal Electrical Schematic – IRAM136-1060B V+ (13) Q1 D1 Q2 D2 Q3 D3 Q4 D4 Q5 D5 Q6 D6 V- (16) R1 VB1 (9) C1 R3 R2 U, VS1 (10) VB2 (5) C2 V, VS2 (6) VB3 (1) C3 R4 R5 R6 W, VS3 (2) D7 D8 D9 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16 24 HO1 R13 25 VB1 LO2 15 1 VCC HIN1 (17) 2 HIN1 HIN2 (18) 3 HIN2 HIN3 (19) 4 HIN3 LIN1 (20) Driver IC LO3 14 LIN1 LIN2 LIN3 6 7 5 F ITRIP EN RCIN VSS 8 9 10 11 12 COM 13 LIN2 (21) LIN3 (22) FLT/EN (23) R8 I_FB (24) VCC ISD RCIN VTH (25) (27) (28) (29) R10 R9 R12 C6 C7 C4 VSS (26) 2 www.irf.com IRAM136-1060B Absolute Maximum Ratings (Continued) Symbol Parameter Min Max PBR Peak Units Conditions Bootstrap Resistor Peak Power (Single Pulse) --- 15.0 W VS1,2,3 High side floating supply offset voltage VB1,2,3 - 25 VB1,2,3 +0.3 V VB1,2,3 High side floating supply voltage -0.3 600 V VCC Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, ITrip -0.3 Lower of (VSS+15V) or VCC+0.3V V tP=100μs, TC =100°C ESR / ERJ series Inverter Section Electrical Characteristics @TJ= 25°C Symbol Parameter Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V VIN=0V, IC=250μA V(BR)CES / T Temperature Coeff. Of Breakdown Voltage --- 0.3 --- V/°C VIN=0V, IC=250μA (25°C - 150°C) VCE(ON) Collector-to-Emitter Saturation Voltage --- 1.5 1.7 --- 1.7 --- ICES Zero Gate Voltage Collector Current --- 5 80 --- 80 --- VFM Diode Forward Voltage Drop VBDFM -- 1.8 2.35 --- 1.45 --- Bootstrap Diode Forward Voltage Drop -- 1.2 -- RBR Bootstrap Resistor Value --- 22 RBR/RBR Bootstrap Resistor Tolerance --- --- IBUS_TRIP Current Protection Threshold (positive going) --- 20 --- --- 15 --- www.irf.com Units Conditions V IC=5A, TJ=25°C IC=5A, TJ=150°C + A V VIN=0V, V =600V + VIN=0V, V =600V, TJ=150°C IF=5A IF=5A, TJ=150°C V IF=1A --- TJ=25°C ±5 % A TJ=25°C ISD=Vss. See fig. 2 and fig. 11b ISD=Open. See fig. 2 and fig. 11b 3 IRAM136-1060B Inverter Section Switching Characteristics @ TJ= 25°C Symbol Parameter Min Typ Max --- 240 400 Units Conditions EON Turn-On Switching Loss EOFF Turn-Off Switching Loss --- 65 90 ETOT Total Switching Loss --- 305 490 EREC Diode Reverse Recovery energy --- 15 25 tRR Diode Reverse Recovery time --- 115 --- EON Turn-on Switching Loss --- 330 --- EOFF Turn-off Switching Loss --- 105 --- ETOT Total Switching Loss --- 435 --- EREC Diode Reverse Recovery energy --- 40 --- tRR Diode Reverse Recovery time --- 150 --- ns QG Turn-On IGBT Gate Charge --- 19 29 nC RBSOA Reverse Bias Safe Operating Area μJ IC=5A, V+=400V VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 ns μJ IC=5A, V+=400V VCC=15V, L=1.2mH, TJ=150°C Energy losses include "tail" and diode reverse recovery See CT1 IC=8A, V+=400V, VGE=15V TJ=150°C, IC=5A, VP=600V V+= 450V, VCC=+15V to 0V FULL SQUARE See CT3 TJ=25°C, VP=600V, SCSOA ICSC Short Circuit Safe Operating Area Short Circuit Collector Current 5 --- --- 50 --- --- μs A V+= 360V, VCC=+15V to 0V See CT2 TJ=25°C, V+= 400V, VCC=15V See CT2 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol Definition Min Typ Max VB1,2,3 Units High side floating supply voltage VS+12 VS+15 VS+20 VS1,2,3 High side floating supply offset voltage Note 4 --- 450 VCC Low side and logic fixed supply voltage 12 15 20 VITRIP ITRIP input voltage VSS --- VSS+5 VIN Logic input voltage LIN, HIN VSS --- VSS+5 V HIN High side PWM pulse width 1 --- --- μs Deadtime External dead time between HIN and LIN 1 --- --- μs V V Note 3: For more details, see IR21364 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details) 4 www.irf.com IRAM136-1060B Static Electrical Characteristics Driver Function @ TJ= 25°C VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 3) Symbol Definition Min Typ Max Units 2.5 --- --- V VIN,th+ Positive going input threshold VIN,th- Negative going input threshold --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS supply undervoltage, Positive going threshold 10.6 11.1 11.6 V VCCUV-, VBSUV- VCC and VBS supply undervoltage, Negative going threshold 10.4 10.9 11.4 V VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V IQBS Quiescent VBS supply current --- --- 120 μA IQCC Quiescent VCC supply current --- --- 4 mA ILK Offset Supply Leakage Current --- --- 50 μA IIN+ Input bias current VIN=3.3V --- 100 195 μA IIN- Input bias current VIN=0V -1 -- --- μA ITRIP+ ITRIP bias current VT/ITRIP=3.3V --- 3.3 6 μA ITRIP- ITRIP bias current VT/ITRIP=0V -1 --- --- μA V(ITRIP) ITRIP threshold Voltage 0.44 0.49 0.54 V V(ITrip, HYS) ITRIP Input Hysteresis --- 0.07 --- V Dynamic Electrical Characteristics @ TJ= 25°C Driver only timing unless otherwise specified. Symbol Parameter Min Typ Max TON Input to Output propagation turnon delay time (see fig.11) --- --- 1.15 TOFF Input to Output propagation turnoff delay time (see fig. 11) --- --- 1.15 μs TFLT Input Filter Time (HIN, LIN) 100 200 --- ns VIN=0 or VIN=5V TBLT-ITRIP ITRIP Blanking Time 100 150 --- ns VIN=0 or VIN=5V, VITRIP=5V DT Dead Time 220 290 360 ns VIN=0 or VIN=5V MT Matching Propagation Delay Time (On & Off) all channels --- 40 75 ns External dead time> 400ns TITRIP ITRIP to six switch turn-off propagation delay (see fig. 2) --- --- 1.75 μs IC=5A, V+=300V TFLT-CLR FAULT clear time (see fig. 2) --- 32.0 --- ms TC = 25°C www.irf.com Units Conditions μs IC=5A, V+=300V 5 IRAM136-1060B Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Rth(J-C) Thermal resistance, per IGBT --- 4.6 5.0 Rth(J-C) Thermal resistance, per Diode --- 6.9 7.6 --- Units Conditions Inverter Operating Condition Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/mK Rth(C-S) Thermal resistance, C-S --- 0.1 CD Creepage Distance, from pins to backside of module 3.2 --- --- mm CTI Comparative Tracking Index 600 --- --- - See outline Drawings Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max R25 Resistance 97 100 103 Units Conditions k TC = 25°C R125 Resistance 2.25 2.52 2.80 k TC = 125°C B B-constant (25-50°C) 4165 4250 4335 k Temperature Range -40 --- 125 °C Typ. Dissipation constant --- 1 --- R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter Min Typ Max Units Conditions RShunt Resistance 32.9 33.3 33.7 m 0 --- 200 ppm/°C TCoeff Temperature Coefficient PShunt Power Dissipation --- --- 2.2 W TRange Temperature Range -40 --- 125 °C TC = 25°C -40°C< TC <100°C Input-Output Logic Level Table 6 FLT/EN ITRIP HIN1,2,3 LIN1,2,3 U,V,W 1 0 1 0 V+ 1 0 0 1 0 1 0 0 0 Off 1 0 1 1 Off 1 1 X X Off 0 X X X Off www.irf.com IRAM136-1060B HIN1,2,3 LIN1,2,3 ITRIP U,V,W Figure 1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 50% 50% ITRIP U,V,W 50% 50% T ITRIP T FLT-CLR Figure 2. ITRIP Timing Waveform Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAM136-1060B Module Pin-Out Description 8 Pin Name 1 VB3 Description 2 W,VS3 3 na 4 na 5 VB2 6 V,VS2 7 na 8 na 9 VB1 10 U,VS1 11 na 12 na 13 V + 14 na 15 na none 16 V- Negative Bus Input Voltage 17 HIN1 Logic Input High Side Gate Driver - Phase 1 18 HIN2 Logic Input High Side Gate Driver - Phase 2 19 HIN3 Logic Input High Side Gate Driver - Phase 3 20 LIN1 Logic Input Low Side Gate Driver - Phase 1 21 LIN2 Logic Input Low Side Gate Driver - Phase 2 22 LIN3 23 FLT/EN Fault Output and Enable Pins 24 IFB Current Feedback Output Pin 25 VCC +15V Main Supply 26 VSS Negative Main Supply 27 ISD Current Protection Level Programming Pin 28 RCIN 29 VTH High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage none none High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage none none High Side Floating Supply voltage 1 Output 1 - High Side Floating Supply Offset Voltage none none Positive Bus Input Voltage none Logic Input Low Side Gate Driver - Phase 3 RCIN Reset Programming Pin Temperature Feedback www.irf.com IRAM136-1060B Typical Application Connection IRAM136-1060B Application Notes 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Mounting an additional high frequency ceramic capacitor close to the module pins is highly recommended. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1μF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency and modulation techniques. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (See maximum ratings Table on page 3). 4. WARNING! Please note that after approx. 32ms the FAULT is automatically reset. (See Dynamic Characteristics Table on page 5). The default Fault clear time is when RCIN pin is open. Refer to Figure 11a for Re selection and desired RCIN setting. 5. PWM generator must be disabled within automatic reset time (TFLT-CLR) to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 6. ISD can be programmed by using external resistor (Rext) connected to Vss. The default current level is when ISD pin is open (see Inverter Characteristics Table on page 3). Maximum current level can be achieved by connecting ISD to Vss. See Figure 11b for desired current level and resistor selection. 7. Fault/En pin (23) must be pulled-up to +5V. www.irf.com 9 IRAM136-1060B Maximum Output Phase RMS Current - A 12 11 10 9 8 7 6 TC = 80ºC TC = 90ºC TC = 100ºC 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz Maximum Output Phase RMS Current - A 6 5 4 3 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 2 1 0 1 10 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6 10 www.irf.com IRAM136-1060B 100 Total Power Loss- W 80 60 40 20 IOUT = 6A IOUT = 5A IOUT = 4A 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 5. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz 120 Total Power Loss - W 100 80 60 FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz 40 20 0 0 1 2 3 4 5 6 7 8 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz www.irf.com 11 IRAM136-1060B Max Allowable Case Temperature - ºC 160 140 120 100 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 80 60 40 0 1 2 3 4 5 6 7 8 Output Phase Current - ARMS Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz 160 IGBT Junction Temperature - °C TJ avg = 1.2 x TTherm + 17 150 140 130 120 110 100 111 90 65 70 75 80 85 90 95 100 105 110 115 Internal Therm istor Tem perature Equivalent Read Out - °C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6 12 www.irf.com IRAM136-1060B 5.0 Thermistor Pin Read-Out Voltage - V 4.5 4.0 3.5 3.0 2.5 2.0 Max Avg. Min 1.5 1.0 0.5 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Therm istor Tem perature - °C 90 100 110 120 130 Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table. Recommended Bootstrap Capacitor - F 11.0 10F 10.0 9.0 8.0 6.8F 7.0 6.0 4.7F 5.0 4.0 3.3F 3.0 2.2F 2.0 1.5F 1.0 0.0 0 5 10 15 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAM136-1060B Typical Fault Clear Time - ms 24 20 16 12 8 4 0 1 2 3 4 5 6 7 8 External Pull Up Resistor Selection - M 9 10 Figure 11a. External Pull Up resistor selection for Fault clear time (Recommended minimum Pull up Resistor is 1M) Typical ITRIP Threshold - A 24 20 16 12 8 4 0 0 5 10 15 20 25 30 35 40 45 50 ISD Program m able Pull-Dow n Resistor - k Figure 11b. Itrip Level External Pull down Resistor Selection 14 www.irf.com IRAM136-1060B Figure 12. Switching Parameter Definitions Figure 11a. Input to Output propagation turn-on delay time. Figure 11b. Input to Output propagation turn-off delay time. Figure 11c. Diode Reverse Recovery. www.irf.com 15 IRAM136-1060B V+ IN Ho Hin1,2,3 IC Driver U,V,W IO Lo Lin1,2,3 Figure CT1. Switching Loss Circuit V+ Lin1,2,3 IN Ho Hin1,2,3 IC Driver U,V,W IO Lo Io Figure CT2. S.C.SOA Circuit V+ IC Driver Lin1,2,3 IN Ho Hin1,2,3 U,V,W IO Lo Io Figure CT3. R.B.SOA Circuit 16 www.irf.com IRAM136-1060B Package Outline IRAM136-1060B missing pin : 3,4,7,8,11,12,14,15 note3 note5 IRAM136-1060B P note4 note2 note1: Unit Tolerance is +0.5mm, 䇭䇭䇭 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note5: “P” Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. Dimensions in mm For mounting instruction see AN-1049 www.irf.com 17 IRAM136-1060B Package Outline IRAM136-1060B2 missing pin : 3,4,7,8,11,12,14,15 note3 note5 IRAM136-1060B2 P note4 note2 note1: Unit Tolerance is +0.5mm, 䇭䇭䇭 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note5: “P” Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. Dimensions in mm For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 2008-05-23 18 www.irf.com