FDP2710_F085 ® N-Channel PowerTrench MOSFET 250V, 50A, 47mΩ Features General Description Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchil Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Typ Qg(TOT) = 78nC at VGS = 10V Fast switching speed Applications Low gate charge High performance trench technology for extremely low RDS(on) PDP application Hybrid Electric Vehicle DC/DC converters High power and current handling capability Qualified to AEC Q101 RoHS Compliant ©2010 Fairchild Semiconductor Corporation FDP2710_F085 Rev. A 1 www.fairchildsemi.com FDP2710_F085 N-Channel PowerTrench® MOSFET February 2010 Symbol VDSS Drain to Source Voltage VGS ID Parameter Ratings 250 Units V Gate to Source Voltage ±30 V Drain Current Continuous (TC < 50oC, VGS = 10V) 50 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) 4 Pulsed EAS PD A See Figure 4 Single Pulse Avalanche Energy (Note 1) 483 mJ Power Dissipation 403 W Derate above 25oC 3.2 W/oC -55 to +150 oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC Maximum Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient (Note 2) 0.31 o C/W 62 o C/W Package Marking and Ordering Information Device Marking FDP2710 Device FDP2710_F085 Package TO220 Reel Size Tube Tape Width NA Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 250 - - V - 0.25 - V/°C Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current VDS = 250V, - - 1 - - 500 VGS = ±30V - - ±100 nA VGS = VDS, ID = 250µA 3 3.9 5 V ID = 50A, VGS= 10V, - 38 47 VGS = 0V TC = 125oC µA On Characteristics VGS(th) Gate to Source Threshold Voltage mΩ rDS(on) Drain to Source On Resistance ID = 50A, VGS= 10V, TJ = 150oC - 104 129 gFS Forward Transconductance ID = 25A, VDS= 10V - 63 - VDS = 25V, VGS = 0V, f = 1MHz - 5690 - pF - 425 - pF - 115 - pF - 78 101 nC - 31 - nC - 20 - nC S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(TOT) Total Gate Charge at 20V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge FDP2710_F085 Rev. A VGS = 0 to 10V 2 VDD = 125V ID = 50A www.fairchildsemi.com FDP2710_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 125V, ID = 50A VGS = 10V, RGEN = 25Ω - 85 - - 183 - ns - 140 - ns - 121 - ns Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current - - 50 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - 150 A VSD Source to Drain Diode Voltage - 0.9 1.2 V trr Reverse Recovery Time - 166 216 ns Qrr Reverse Recovery Charge - 1 1.3 uC ISD = 50A ISD = 50A, dISD/dt = 100A/µs Notes: 1: Starting TJ = 25oC, L = 1.68mH, IAS = 24A. 2: Pulse width 100s This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDP2710_F085 Rev. A 3 www.fairchildsemi.com FDP2710_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TC = 25oC unless otherwise noted 60 1.0 50 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TC, CASE TEMPERATURE(oC) 40 30 20 10 0 25 150 Figure 1. Normalized Power Dissipation vs Case Temperature VGS = 10V CURRENT LIMITED BY PACKAGE 50 75 100 125 o TC, CASE TEMPERATURE ( C) 150 Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 3000 TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK IDM, PEAK CURRENT (A) 1000 CURRENT AS FOLLOWS: 150 - TC I = I2 125 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDP2710_F085 Rev. A 4 www.fairchildsemi.com FDP2710_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 100 10us 100 100us 10 1 1ms 0.1 0.01 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE 10ms TJ = MAX RATED o TC = 25 C DC 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25oC 10 STARTING TJ = 125oC 1 0.01 500 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 140 140 ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 120 ID, DRAIN CURRENT (A) Figure 6. Unclamped Inductive Switching Capability VDD = 20V 100 80 o TJ = 150 C 60 40 TJ = 25oC TJ = -55oC 20 0 120 100 VGS = 6.5V 60 40 VGS = 6V VGS = 5.5V 2 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 0 10 ID = 50A PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 150 TJ = 150oC 100 TJ = 25oC 50 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDP2710_F085 Rev. A 0 3 6 9 12 VDS, DRAIN TO SOURCE VOLTAGE (V) 15 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) VGS = 10V 80 20 Figure 7. Transfer Characteristics 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 3.0 2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 0.5 0.6 -80 ID = 50A VGS = 10V -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDP2710_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1.3 1.15 NORMALIZED GATE THRESHOLD VOLTAGE 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250µA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 10 VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss Crss 100 f = 1MHz VGS = 0V 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 13. Capacitance vs Drain to Source Voltage FDP2710_F085 Rev. A 160 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 20000 10000 CAPACITANCE (pF) ID = 1mA ID = 50A 8 VDD = 120V VDD = 125V VDD = 130V 6 4 2 0 0 20 40 60 Qg, GATE CHARGE(nC) 80 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDP2710_F085 N-Channel PowerTrench® MOSFET Typical Characteristics tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 FDP2710_F085 Rev. A 7 www.fairchildsemi.com FDP2710_F085 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ PowerTrench® FRFET® The Power Franchise® ® Auto-SPM™ Global Power ResourceSM PowerXS™ Build it Now™ Programmable Active Droop™ Green FPS™ CorePLUS™ QFET® Green FPS™ e-Series™ TinyBoost™ CorePOWER™ QS™ Gmax™ TinyBuck™ CROSSVOLT™ Quiet Series™ GTO™ TinyCalc™ RapidConfigure™ CTL™ IntelliMAX™ TinyLogic® Current Transfer Logic™ ISOPLANAR™ ™ TINYOPTO™ DEUXPEED® MegaBuck™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Dual Cool™ MICROCOUPLER™ TinyPWM™ SignalWise™ EcoSPARK® MicroFET™ TinyWire™ SmartMax™ EfficentMax™ MicroPak™ TriFault Detect™ SMART START™ MicroPak2™ ® TRUECURRENT™* SPM® MillerDrive™ µSerDes™ ® STEALTH™ MotionMax™ Fairchild ® SuperFET™ Motion-SPM™ Fairchild Semiconductor SuperSOT™-3 OptiHiT™ FACT Quiet Series™ UHC® SuperSOT™-6 OPTOLOGIC® FACT® ® Ultra FRFET™ ® OPTOPLANAR SuperSOT™-8 FAST ® UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ FlashWriter® * PDP SPM™ XS™ ®* FPS™ Power-SPM™ F-PFS™