MMBT3904T NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A04 • Well suited for portable application SOT-523F • As complementary type, PNP MMBT3906T is recommended Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA TJ Junction Temperature 150 °C TSTG Storage Temperature Range -55 ~ 150 °C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25°C unless otherwise noted a Symbol Parameter Max Unit PC Collector Power Dissipation, by RθJA 250 mW RθJA Thermal Resistance, Junction to Ambient 500 °C/W * Minimum land pad. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 60 V BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6 ICEX Collector Cut-off Current VCE = 60V, VEB(OFF) = 3V hFE DC Current Gain VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 50mA VCE = 1V, IC = 100mA V 50 40 70 100 60 30 nA 300 VCE (sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.2 0.3 V V VBE (sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.65 0.85 0.95 V V fT Current Gain Bandwidth Product VCE = 20V, IC = 10mA, f = 100MHz 300 Cob Output Capacitance VCB = 5V, IE = 0, f = 1MHz 6 pF Cib Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 15 pF td Delay Time 35 ns tr Rise Time VCC = 3V, IC = 10mA IB1 =- IB2 = 1mA 35 ns ts Storage Time 200 ns tf Fall Time 50 ns MHz * DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2% © 2007 Fairchild Semiconductor Corporation MMBT3904T Rev. 1.0.0 www.fairchildsemi.com 1 MMBT3904T — NPN Epitaxial Silicon Transistor February 2008 Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 1000 o T J=125 C Ic=10*Ib Vce=1V o Collector-Emitter Voltage,[mV] T J=75 C o Current Gain T J=25 C o T J=-25 C 100 10 1 10 100 o T J=125 C o T J=75 C o T J=25 C 100 o T J=-25 C 10 1000 100 Collector Current, [mA] Collector Current, [mA] Figure 3. Base- Emitter Saturation Voltage Figure 4. Collector- Base Leakage Current Base-Collector Leakage Current,[nA] Ic=10*Ib o Base- Emitter Voltage,[mV] o T J=25 C T J=-25 C 1000 o T J=75 C o T J =125 C 100 10 100 1000 o TJ=125 C 100 o TJ=75 C o TJ=25 C 10 o TJ=-25 C 1 10 20 Collector Current, [mA] Figure 5. Collector- Base Capacitance 40 50 60 Figure 6. Power Derating 300 7 f=1mhz 250 7 Power Dissipation, [mW] Base- Collector Juntion Capacitance, Cob[pF] 30 Base-Collector Revere Voltage, [V] 6 6 5 5 200 150 100 50 0 4 0 5 0 10 50 75 100 125 150 o Ambient Temperature, T a[ C] Base- Collector Reverse Voltage, V cb[V] © 2007 Fairchild Semiconductor Corporation MMBT3904T Rev. 1.0.0 25 www.fairchildsemi.com 2 MMBT3904T — NPN Epitaxial Silicon Transistor Typical Performance Characteristics MMBT3904T — NPN Epitaxial Silicon Transistor Package Dimensions SOT-523F • Case : SOT-523F • Case Material(Molded Plastic): KTMC1060SC • UL Flammability classification rating : “V0” • Moisture Sensitivity level per JESD22-A1113B : MSL 1 • Lead terminals solderable per MIL-STD7502026 /JESD22A121 • Lead Free Plating : Pure Tin(Matte) Dimensions in Millimeters © 2007 Fairchild Semiconductor Corporation MMBT3904T Rev. 1.0.0 www.fairchildsemi.com 3 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2007 Fairchild Semiconductor Corporation MMBT3904T Rev. 1.0.0 www.fairchildsemi.com 4 MMBT3904T NPN Epitaxial Silicon Transistor TRADEMARKS