a FEATURES +1.8 V to +5.5 V Single Supply 4 ⍀ (Max) On Resistance 0.75 ⍀ (Typ) On-Resistance Flatness –3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SOT-23 Package, 8-Lead SOIC Package Fast Switching Times t ON 20 ns t OFF 6 ns Typical Power Consumption (<0.01 W) TTL/CMOS Compatible APPLICATIONS Battery Powered Systems Communication Systems Sample Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement GENERAL DESCRIPTION The ADG719 is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. The ADG719 can operate from a single supply range of +1.8 V to +5.5 V, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices. Each switch of the ADG719 conducts equally well in both directions when on. The ADG719 exhibits break-before-make switching action. CMOS Low Voltage 4 ⍀ SPDT Switch ADG719 FUNCTIONAL BLOCK DIAGRAM ADG719 S2 D S1 IN SWITCHES SHOWN FOR A LOGIC "1" INPUT PRODUCT HIGHLIGHTS 1. +1.8 V to +5.5 V Single Supply Operation. The ADG719 offers high performance, including low on resistance and fast switching times and is fully specified and guaranteed with +3 V and +5 V supply rails. 2. Very Low RON (4 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V operation, RON is typically 40 Ω over the temperature range. 3. On-Resistance Flatness (RFLAT(ON)) (0.75 Ω typ). 4. –3 dB Bandwidth >200 MHz. 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. Fast tON /tOFF. 7. Tiny 6-lead SOT-23 and 8-lead µSOIC packages. Because of the advanced submicron process, –3 dB bandwidths of greater than 200 MHz can be achieved. The ADG719 is available in a 6-lead SOT-23 package and an 8-lead µSOIC package. REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998 ADG719–SPECIFICATIONS1 (Vnoted.)= +5 V ⴞ 10%, GND = 0 V. All specifications –40ⴗC to +85ⴗC, unless otherwise DD Parameter B Version –40ⴗC to +25ⴗC +85ⴗC ANALOG SWITCH Analog Signal Range On Resistance (RON) 4 On Resistance Match Between Channels (∆RON) On-Resistance Flatness (RFLAT(ON)) 0 V to VDD 5 V Ω max 0.1 0.4 Ω typ Ω max Ω typ Ω max 0.75 1.2 LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) ± 0.01 ± 0.25 ± 0.01 ± 0.25 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 0.005 DYNAMIC CHARACTERISTICS2 tON 14 Units VS = 0 V to VDD, IS = –10 mA Test Circuit 1 VS = 0 V to VDD, IS = –10 mA VS = 0 V to VDD, IS = –10 mA VDD = +5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V Test Circuit 2 VS = VD = 1 V, or VS = VD = 4.5 V Test Circuit 3 ± 0.35 nA typ nA max nA typ nA max 2.4 0.8 V min V max ± 0.1 µA typ µA max VIN = VINL or VINH RL = 300 Ω, CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 3 V, Test Circuit 5 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, Test Circuit 7 RL = 50 Ω, CL = 5 pF, Test Circuit 8 ± 0.35 tOFF 3 Break-Before-Make Time Delay, tD 8 Off Isolation –67 –87 ns typ ns max ns typ ns max ns typ ns min dB typ dB typ Channel-to-Channel Crosstalk –62 –82 dB typ dB typ Bandwidth –3 dB CS (OFF) CD, CS (ON) 200 7 27 MHz typ pF typ pF typ 20 6 1 POWER REQUIREMENTS IDD Test Conditions/Comments µA typ µA max 0.001 1.0 VDD = +5.5 V Digital Inputs = 0 V or 5 V NOTES 1 Temperature ranges are as follows: B Version, –40°C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. –2– REV. A ADG719 1 SPECIFICATIONS (V DD = +3 V ⴞ 10%, GND = 0 V. All specifications –40ⴗC to +85ⴗC, unless otherwise noted.) Parameter B Version –40ⴗC to +25ⴗC +85ⴗC ANALOG SWITCH Analog Signal Range On Resistance (RON) 6 On Resistance Match Between Channels (∆RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) ± 0.01 ± 0.25 ± 0.01 ± 0.25 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 0.005 DYNAMIC CHARACTERISTICS2 tON 16 Units Test Conditions/Comments 0 V to VDD 7 10 V Ω typ Ω max VS = 0 V to VDD, IS = –10 mA, Test Circuit 1 0.1 0.4 2.5 Ω typ Ω max Ω typ VDD = +3.3 V VS = 3 V/1 V, VD = 1 V/3 V, Test Circuit 2 VS = VD = 1 V, or VS = VD = 3 V, Test Circuit 3 ± 0.35 2.0 0.4 V min V max ± 0.1 µA typ µA max VIN = VINL or VINH RL = 300 Ω, CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 2 V, Test Circuit 5 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, Test Circuit 7 RL = 50 Ω, CL = 5 pF, Test Circuit 8 ± 0.35 tOFF 4 Break-Before-Make Time Delay, tD 8 Off Isolation –67 –87 ns typ ns max ns typ ns max ns typ ns min dB typ dB typ Channel-to-Channel Crosstalk –62 –82 dB typ dB typ Bandwidth –3 dB CS (OFF) CD, CS (ON) 200 7 27 MHz typ pF typ pF typ 7 1 POWER REQUIREMENTS µA typ µA max 0.001 1.0 NOTES 1 Temperature ranges are as follows: B Version, –40°C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. A VS = 0 V to VDD, IS = –10 mA nA typ nA max nA typ nA max 24 IDD VS = 0 V to VDD, IS = –10 mA –3– VDD = +3.3 V Digital Inputs = 0 V or 3 V ADG719 ABSOLUTE MAXIMUM RATINGS 1 TERMINOLOGY (TA = +25°C unless otherwise noted) VDD GND S D IN RON ∆RON Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Ohmic resistance between D and S. On resistance match between any two channels i.e., RON max – RON min. RFLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the switch “OFF.” IS (OFF) ID, IS (ON) Channel Leakage Current with the switch “ON.” VD (VS) Analog Voltage on Terminals D, S. CS (OFF) “OFF” Switch Source Capacitance. CD (OFF) “OFF” Switch Drain Capacitance. CD, CS (ON) “ON” Switch Capacitance. tON Delay between applying the digital control input and the output switching on. tOFF Delay between applying the digital control input and the output switching off. tD “OFF” time or “ON” time measured between the 90% points of both switches, when switching from one address state to another. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an “OFF” switch. Bandwidth The frequency at which the output is attenuated by –3 dBs. On Response The frequency reponse of the “ON” switch. On Loss The voltage drop across the “ON” switch seen on the On Response vs. Frequency plot as how many dBs the signal is away from 0 dB at very low frequencies. VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V Analog, Digital Inputs2 . . . . . . . . . . . –0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle max) Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W SOT-23 Package, Power Dissipation . . . . . . . . . . . . . . 282 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 229.6°C/W θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . 91.99°C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 kV NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. Table I. Truth Table ADG719 IN Switch S1 Switch S2 0 1 ON OFF OFF ON PIN CONFIGURATIONS 8-Lead SOIC (RM-8) 6-Lead SOT-23 (RT-6) IN 1 VDD 2 ADG719 6 S2 5 D TOP VIEW (Not to Scale) 4 GND 3 S1 8 S2 D 1 ADG719 7 NC TOP VIEW GND 3 (Not to Scale) 6 IN S1 2 VDD 4 5 NC NC = NO CONNECT ORDERING GUIDE Model Temperature Range Brand* Package Description Package Option ADG719BRM ADG719BRT –40°C to +85°C –40°C to +85°C S5B S5B µSOIC (microSmall Outline IC) SOT-23 (Plastic Surface Mount) RM-8 RT-6 *Brand = Due to package size limitations, these three characters represent the part number. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG719 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –4– WARNING! ESD SENSITIVE DEVICE REV. A Typical Performance Characteristics– ADG719 6.0 10m 5.5 VDD = +5V VDD = 2.7V TA = +258C 5.0 1m 4.5 100m VDD = 4.5V VDD = 3.0V 3.5 I SUPPLY – A RON – V 4.0 3.0 2.5 VDD = 5.0V 2.0 10m 1m 100n 1.5 1.0 10n 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1n 5.0 1 10 100 VD OR VS – DRAIN OR SOURCE VOLTAGE – V Figure 1. On Resistance as a Function of VD (VS) Single Supplies 1M 10M 100M Figure 4. Supply Current vs. Input Switching Frequency 6.0 –30 VDD = +5V, +3V VDD = +3V 5.5 5.0 –40 +858C 4.5 –50 OFF ISOLATION – dB +258C 4.0 –408C RON – V 1k 10k 100k FREQUENCY – Hz 3.5 3.0 2.5 2.0 –60 –70 –80 –90 –100 1.5 –110 1.0 –120 0.5 0 1.0 1.5 2.0 2.5 0.5 VD OR VS – DRAIN OR SOURCE VOLTAGE – V 0 –130 10k 3.0 Figure 2. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V 100k 1M 10M FREQUENCY – Hz 100M Figure 5. Off Isolation vs. Frequency 6.0 –30 5.5 VDD = +5V, +3V VDD = +5V –40 5.0 –50 4.5 3.5 CROSSTALK – dB RON – V 4.0 +858C 3.0 2.5 +258C 2.0 –408C –60 –70 –80 –90 –100 1.5 1.0 –110 0.5 –120 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 –130 10k 5.0 VD OR VS – DRAIN OR SOURCE VOLTAGE – V 1M 10M FREQUENCY – Hz Figure 6. Crosstalk vs. Frequency Figure 3. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V REV. A 100k –5– 100M ADG719 0 ON RESPONSE – dB VDD = +5V –2 –4 –6 10k 100k 1M 10M FREQUENCY – Hz 100M Figure 7. On Response vs. Frequency Test Circuits IDS V1 S IS (OFF) D A VS ID (OFF) S D VD VS RON = V1/I DS ID (ON) S A Test Circuit 1. On Resistance A VS Test Circuit 2. Off Leakage 0.1mF D VD Test Circuit 3. On Leakage VDD VIN 50% 50% VDD S D RL 300V IN VS GND 90% 90% VOUT VOUT CL 35pF tOFF tON Test Circuit 4. Switching Times 0.1mF VIN VDD S1 VS1 VDD D D2 S2 VS2 RL2 300V IN CL2 35pF VOUT VOUT 50% 50% 50% 0V tD GND VIN 50% 0V tD Test Circuit 5. Break-Before-Make Time Delay, tD VDD VDD 0.1mF VDD 0.1mF 0.1mF S1 D VIN VDD D S2 S2 VS S1 VOUT VDD VOUT RL 50V IN GND Test Circuit 6. Off Isolation VS S1 RL 50V D S2 IN GND CHANNEL-TO-CHANNEL CROSSTALK = 20 3 LOG |VS/VOUT| Test Circuit 7. Channel-to-Channel Crosstalk –6– VDD VS VIN VOUT RL 50V IN GND Test Circuit 8. Bandwidth REV. A ADG719 APPLICATIONS INFORMATION The signal transfer characteristic is dependent on the switch channel capacitance, CDS. This capacitance creates a frequency zero in the numerator of the transfer function A(s). Because the switch on resistance is small, this zero usually occurs at high frequencies. The bandwidth is a function of the switch output capacitance combined with CDS and the load capacitance. The frequency pole corresponding to these capacitances appears in the denominator of A(s). The ADG719 belongs to Analog Devices’ new family of CMOS switches. This series of general purpose switches have improved switching times, lower on resistance, higher bandwidths, low power consumption and low leakage currents. ADG719 Supply Voltages Functionality of the ADG719 extends from +1.8 V to +5.5 V single supply, which makes it ideal for battery powered instruments, where important design parameters are power efficiency and performance. The dominant effect of the output capacitance, CD, causes the pole breakpoint frequency to occur first. Therefore, in order to maximize bandwidth a switch must have a low input and output capacitance and low on resistance. The On Response vs. Frequency plot for the ADG719 can be seen in Figure 7. It is important to note that the supply voltage effects the input signal range, the on resistance and the switching times of the part. By taking a look at the typical performance characteristics and the specifications, the effects of the power supplies can be clearly seen. Off Isolation Off isolation is a measure of the input signal coupled through an off switch to the switch output. The capacitance, CDS, couples the input signal to the output load, when the switch is off as shown in Figure 9. For VDD = +1.8 V operation, RON is typically 40 Ω over the temperature range. On Response vs. Frequency Figure 8 illustrates the parasitic components that affect the ac performance of CMOS switches (the switch is shown surrounded by a box). Additional external capacitances will further degrade some performance. These capacitances affect feedthrough, crosstalk and system bandwidth. CDS D S VOUT VIN CD CLOAD RLOAD CDS Figure 9. Off Isolation Is Affected by External Load Resistance and Capacitance D S RON VIN VOUT CD CLOAD The larger the value of CDS, larger values of feedthrough will be produced. The typical performance characteristic graph of Figure 5 illustrates the drop in off isolation as a function of frequency. From dc to roughly 200 kHz, the switch shows better than –95 dB isolation. Up to frequencies of 10 MHz, the off isolation remains better than –67 dB. As the frequency increases, more and more of the input signal is coupled through to the output. Off isolation can be maximized by choosing a switch with the smallest CDS as possible. The values of load resistance and capacitance affect off isolation also, as they contribute to the coefficients of the poles and zeros in the transfer function of the switch when open. RLOAD Figure 8. Switch Represented by Equivalent Parasitic Components The transfer function that describes the equivalent diagram of the switch (Figure 8) is of the form (A)s shown below. s(RON CDS ) + 1 A(s) = RT s(RT RON CT ) + 1 where: RT = RLOAD/(RLOAD + RON) CT = CLOAD + CD + CDS REV. A s(RLOAD CDS ) A(s) = s(RLOAD ) (CLOAD + CD + CDS ) + 1 –7– ADG719 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead SOIC (RM-8) 8 0.122 (3.10) 0.114 (2.90) C3291a–0–9/98 0.122 (3.10) 0.114 (2.90) 5 0.199 (5.05) 0.187 (4.75) 1 4 PIN 1 0.0256 (0.65) BSC 0.120 (3.05) 0.112 (2.84) 0.120 (3.05) 0.112 (2.84) 0.043 (1.09) 0.037 (0.94) 0.006 (0.15) 0.002 (0.05) 0.018 (0.46) SEATING 0.008 (0.20) PLANE 0.011 (0.28) 0.003 (0.08) 33° 27° 0.028 (0.71) 0.016 (0.41) 6-Lead Plastic Surface Mount Package (RT-6) 0.122 (3.10) 0.106 (2.70) 0.071 (1.80) 0.059 (1.50) 6 5 4 1 2 3 0.118 (3.00) 0.098 (2.50) PIN 1 0.037 (0.95) BSC 0.075 (1.90) BSC 0.006 (0.15) 0.000 (0.00) 0.057 (1.45) 0.035 (0.90) 0.020 (0.50) SEATING 0.010 (0.25) PLANE 108 0.009 (0.23) 08 0.003 (0.08) 0.022 (0.55) 0.014 (0.35) PRINTED IN U.S.A. 0.051 (1.30) 0.035 (0.90) –8– REV. A