BAT41 Schottky Diodes FEATURES DO-35 min. 1.083 (27.5) ♦ This diode featutres low turn-on voltage max. ∅.079 (2.0) Cathode Mark and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. ♦ This diode is also available in a MiniMELF case with type designation LL41. min. 1.083 (27.5) max. .150 (3.8) ♦ For general purpose applications max. ∅.020 (0.52) MECHANICAL DATA Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 100 V Forward Continuous Current at Tamb = 25 °C IF 1001) mA Repetitive Peak Forward Current at tp < 1 s, @ < 0.5, Tamb = 25 °C IFRM 3501) mA Surge Forward Current at tp = 10 ms, Tamb = 25 °C ISFM 7501) mA Power Dissipation, Tamb = 25 °C Ptot 4001) mW Junction Temperature Tj 125 °C Ambient Operating Temperature Range Tamb –65 to +125 °C Storage Temperature Range TS –65 to +150 °C 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. 4/98 BAT41 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Test Conditions Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage tested with 100 µA / 300 µs Pulses V(BR)R 100 110 – V Forward Voltage Pulse Test tp = 300 µs at IF = 1 mA at IF = 200 mA VF VF – – 0.40 – 0.45 1.0 V V Leakage Current Pulse Test tp = 300 µs at VR = 50 V, at Tj = 25 °C at VR = 50 V, at Tj = 100 °C IR IR – – – – 100 20 nA µA Capacitance at VR = 1 V, f = 1 MHz Ctot – 2 – pF Reverse Recovery Time from IF = 10 mA, to IR = 10 mA to IR = 1 mA RL = 100 Ohm trr – 5 – ns Thermal Resistance Junction to Ambient Air RthJA – – 3001) K/W 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.