Infineon ICE3B1565J Off-line smps cur rent mode controller with integrated 650v Datasheet

D a t as he e t , V e rs io n 2 . 9, 25 M a r 20 1 3
®
CoolSET -F3
( J i tte r Ve r s i on )
I CE3 B0 3 65 J
I CE3 B0 5 65 J
I CE3 B1 5 65 J
I CE3 B2 0 65 J
O f f - Li ne S M P S C ur re nt Mo de
C on t ro ll er w it h in t e gr at e d 6 50 V
C oo lM O S ® a nd S t a rt u p c e l l
(f r eq ue nc y j it t er Mo de ) in D I P - 8
Po we r M a n ag e m e n t & Su p p ly
N e v e r
s t o p
t h i n k i n g .
CoolSET®-F3
ICE3Bxx65J
Revision History:
2013-03-25
Datasheet Version 2.9
Previous Version: 2.8
Page
Subjects (major changes since last revision)
Revised typo (F3)
15
Revised max. limit for VFB, V SOFTS and V CS.
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www.infineon.com
CoolMOS ®, CoolSET® are trademarks of Infineon Technologies AG.
Edition 2013-03-25
Published by
Infineon Technologies AG,
81726 Munich, Germany,
© 2013 Infineon Technologies AG.
All Rights Reserved.
Legal disclaimer
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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CoolSET®-F3
ICE3Bxx65J
Off-Line SMPS Current Mode Controller with
integrated 650V CoolMOS® and Startup cell
(frequency jitter Mode) in DIP-8
Product Highlights
• Active Burst Mode to reach the lowest Standby Power
Requirements < 100mW
• Adjustable Blanking Window for High Load Jumps to
increase Reliability
• Frequency Jittering for Low EMI
• Pb-free lead plating, RoHS compilant
Features
Description
•
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650V Avalanche Rugged CoolMOS ® with built in
switchable Startup Cell
Active Burst Mode for lowest Standby Power
@ light load controlled by Feedback Signal
Fast Load Jump Response in Active Burst Mode
67 kHz fixed Switching Frequency
Auto Restart Mode for Over temperature
Detection
Auto Restart Mode for Overvoltage Detection
Auto Restart Mode for Overload and Open Loop
Auto Restart Mode for VCC Undervoltage
User defined Soft Start
Minimum of external Components required
Max Duty Cycle 75%
Overall Tolerance of Current Limiting < ±5%
Internal Leading Edge Blanking
BiCMOS technology provides wide VCC Range
Frequency Jittering for Low EMI
PG-DIP-8
The CoolSET®-F3(Jitter version) meets the requirements
for Off-Line Battery Adapters and low cost SMPS for the
lower power range. By use of a BiCMOS technology a wide
VCC range up to 26V is provided. This covers the changes
in the auxiliary supply voltage if a CV/CC regulation is
implemented on the secondary side. Furthermore an Active
Burst Mode is integrated to fullfill the lowest Standby Power
Requirements <100mW at no load and Vin = 270VAC. As
during Active Burst Mode the controller is always active
there is an immediate response on load jumps possible
without any black out in the SMPS. In Active Burst Mode
the ripple of the output voltage can be reduced <1%.
Furthermore Auto Restart Mode is entered in case of
Overtemperature, VCC Overvoltage, Output Open loop or
Overload and VCC Undervoltage. By means of the internal
precise peak current limitation, the dimension of the
transformer and the secondary diode can be lowered which
leads to more cost efficiency.
Typical Application
+
C Bulk
85 ... 270 VAC
Converter
DC Output
Snubber
-
C VCC
VCC
Drain
Startup Cell
Power M anagement
PWM Controller
Current Mode
CS
P recise Low Tolerance Peak
Current Limitation
R Sense
Depl. CoolMOS™
FB
GND
C ontrol
U nit
Active Burst Mode
Auto Restart Mode
SoftS
CoolSET™ -F3
(Jitter Version)
C SoftS
Type
Package
Marking
VDS
FOSC
RDSon1)
230VAC ±15% 2)
85-265 VAC2)
ICE3B0365J
PG-DIP-8
ICE3B0365J
650V
67kHz
6.45W
22W
10W
ICE3B0565J
PG-DIP-8
ICE3B0565J
650V
67kHz
4.70W
25W
12W
ICE3B1565J
PG-DIP-8
ICE3B1565J
650V
67kHz
1.70W
42W
20W
ICE3B2065J
PG-DIP-8
ICE3B2065J
650V
67kHz
0.92W
57W
28W
1)
typ @ T=25°C
2)
Calculated maximum input power rating at T a=75°C, Tj=125°C and without copper area as heat sink
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
Table of Contents
Page
1
Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.1
Pin Configuration with PG-DIP-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.2
Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
2
Representative Blockdiagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
3
3.1
3.2
3.3
3.4
3.4.1
3.4.2
3.4.3
3.5
3.5.1
3.5.2
3.6
3.6.1
3.6.2
3.6.2.1
3.6.2.2
3.6.2.3
3.6.3
3.6.3.1
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Power Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Startup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
PWM-Latch FF1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Leading Edge Blanking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Propagation Delay Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Adjustable Blanking Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Entering Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Working in Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Leaving Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Auto Restart Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
4
4.1
4.2
4.3
4.3.1
4.3.2
4.3.3
4.3.4
4.3.5
4.3.6
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Supply Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Internal Voltage Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
CoolMOS® Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
5
Temperature derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
6
Outline Dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
7
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
8
Schematic for recommended PCB layout . . . . . . . . . . . . . . . . . . . . . . . .26
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
1
Pin Configuration and Functionality
1.1
Pin Configuration with PG-DIP-8
Pin
Symbol
Function
1
SoftS
Soft-Start
2
FB
Feedback
3
CS
Current Sense/
650V1) CoolMOS® Source
4
Drain
650V1) CoolMOS® Drain
5
Drain
650V1) CoolMOS® Drain
6
N.C.
Not Connected
7
VCC
Controller Supply Voltage
8
GND
Controller Ground
1)
1.2
SoftS (Soft Start, Auto Restart & Frequency
Jittering Control)
The SoftS pin combines the function of Soft Start
during Start Up and error detection for Auto Restart
Mode. These functions are implemented and can be
adjusted by means of an external capacitor at SoftS to
ground. This capacitor also provides an adjustable
blanking window for high load jumps, before the IC
enters into Auto Restart Mode. Furthermore this pin is
also used to control the period of frequency jittering
during normal load.
FB (Feedback)
The information about the regulation is provided by the
FB Pin to the internal Protection Unit and to the internal
PWM-Comparator to control the duty cycle. The FBSignal controls in case of light load the Active Burst
Mode of the controller.
at Tj = 110°C
GND
CS (Current Sense)
The Current Sense pin senses the voltage developed
on the series resistor inserted in the source of the
integrated CoolMOS®. If CS reaches the internal
threshold of the Current Limit Comparator, the Driver
output is immediately switched off. Furthermore the
current information is provided for the PWMComparator to realize the Current Mode.
VCC
Drain (Drain of integrated CoolMOS®)
Pin Drain is the connection to the Drain of the internal
CoolMOSTM.
Package PG-DIP-8
SoftS
FB
1
2
8
7
Pin Functionality
CS
3
6
N.C
VCC (Power supply)
The VCC pin is the positive supply of the IC. The
operating range is between 10.3V and 26V.
Drain
4
5
Drain
GND (Ground)
The GND pin is the ground of the controller.
Figure 1
Note:
Pin Configuration PG-DIP-8(top view)
Pin 4 and 5 are shorted within the DIP
package.
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
2
Representative Blockdiagram
Figure 2
Version 2.9
Representative Blockdiagram
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CoolSET®-F3
ICE3Bxx65J
3
Functional Description
3.2
All values which are used in the functional description
are typical values. For calculating the worst cases the
min/max values which can be found in section 4
Electrical Characteristics have to be considered.
3.1
Power Management
Drain
VCC
Introduction
Startup Cell
®
CoolSET -F3 Jitter version is the further development
of the CoolSET®-F2 to meet the requirements for the
lowest Standby Power at minimum load and no load
conditions. A new fully integrated Standby Power
concept is implemented into the IC in order to keep the
application design easy. Compared to CoolSET®-F2 no
further external parts are needed to achieve the lowest
Standby Power. An intelligent Active Burst Mode is
used for this Standby Mode. After entering this mode
there is still a full control of the power conversion by the
secondary side via the same optocoupler that is used
for the normal PWM control. The response on load
jumps is optimized. The voltage ripple on Vout is
minimized. Vout is further on well controlled in this
mode.
The usually external connected RC-filter in the
feedback line after the optocoupler is integrated in the
IC to reduce the external part count.
Furthermore a high voltage Startup Cell is integrated
into the IC which is switched off once the Undervoltage
Lockout on-threshold of 18V is exceeded. This Startup
Cell is part of the integrated CoolMOS ®. The external
startup resistor is no longer necessary as this Startup
Cell is connected to the Drain. Power losses are
therefore reduced. This increases the efficiency under
light load conditions drastically.
The Soft-Start capacitor is also used for providing an
adjustable blanking window for high load jumps. During
this time window the overload detection is disabled.
With this concept no further external components are
necessary to adjust the blanking window.
An Auto Restart Mode is implemented in the IC to
reduce the average power conversion in the event of
malfunction or unsafe operating condition in the SMPS
system. This feature increases the system’s
robustness and safety which would otherwise lead to a
destruction of the SMPS. Once the malfunction is
removed, normal operation is automatically initiated
after the next Start Up Phase.
The internal precise peak current limitation reduces the
costs for the transformer and the secondary diode. The
influence of the change in the input voltage on the
power limitation can be avoided together with the
integrated
Propagation
Delay
Compensation.
Therefore the maximum power is nearly independent
on the input voltage which is required for wide range
SMPS. There is no need for an extra over-sizing of the
SMPS, e.g. the transformer or the secondary diode.
Version 2.9
Power Management
Internal Bias
Undervoltage Lockout
18V
10.3
Power-Down Reset
5V
Voltage
Reference
Auto Restart
Mode
Active Burst
Mode
T1
SoftS
Figure 3
Power Management
The Undervoltage Lockout monitors the external
supply voltage VVCC . When the SMPS is plugged to the
main line the internal Startup Cell is biased and starts
to charge the external capacitor CVCC which is
connected to the VCC pin. The VCC charge current
that is provided by the Startup Cell from the Drain pin is
1.05mA. When VVCC exceeds the on-threshold
VCCon=18V, bias circuit is switched on. Then the
Startup Cell is switched off by the Undervoltage
Lockout and therefore no power losses present due to
the connection of the Startup Cell to the Drain voltage.
To avoid uncontrolled ringing at switch-on a hysteresis
is implemented. The switch-off of the controller can
only take place after active mode was entered and
VVCC falls below 10.3V.
The maximum current consumption before the
controller is activated is about 300uA.
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CoolSET®-F3
ICE3Bxx65J
When V VCC falls below the off-threshold VCCoff=10.3V
the bias circuit is switched off and the Power Down
reset let T1 discharging the soft-start capacitor C SoftS at
pin SoftS. Thus it is ensured that at every startup cycle
the voltage ramp at pin SoftS starts at zero.
The bias circuit is switched off if Auto Restart Mode is
entered. The current consumption is then reduced to
300uA.
Once the malfunction condition is removed, this block
will then turn back on. The recovery from Auto Restart
Mode does not require disconnecting the SMPS from
the AC line.
When Active Burst Mode is entered, some internal Bias
is switched off in order to reduce the current
consumption to about 500uA while keeping a
comparator (which trigger if VFB has exceeded 3.61V)
and the Soft Start capacitor clamped at 3.0 V as this is
necessary in this mode.
resistor RSoftS determines the duty cycle until V SoftS
exceeds 3.1V.
When the Soft Start begins, CSoftS is immediately
charged up to approx. 0.8V by T2. Therefore the Soft
Start Phase takes place between 0.8V and 3.1V.
Above VSoftsS = 3.1V there is no longer duty cycle
limitation DCmax which is controlled by comparator C7
since comparator C2 blocks the gate G7 (see Figure
5).This maximum charge current in the very first stage
when VSoftS is below 0.8V, is limited to 0.9mA.
VSoftS
max. Startup Phase
4.0V
3.1V
0.8V
3.3
max. Soft Start Phase
Startup Phase
DCmax
3.25k
t
5V
RSoftS
DC1
DC2
SoftS
Freq Jitter
Charging
current IFJ
CSoftS
Freq Jitter
Discharging
current IFJ
Soft Start
C7
T2
T3
0.8V
t1
Freq Jitter
Control
Figure 5
Gate Driver
G7
C2
3.1V
PWM OP
x3.2
Startup Phase
By means of this extra charge stage, there is no delay
in the beginning of the Startup Phase when there is still
no switching. Furthermore Soft Start is finished at 3.1V
to have faster the maximum power capability. The duty
cycles DC1 and DC2 are depending on the mains and
the primary inductance of the transformer. The
limitation of the primary current by DC2 is related to
VSoftS = 3.1V. But DC1 is related to a maximum primary
current which is limited by the internal Current Limiting
with CS = 1V. Therefore the maximum Startup Phase
is divided into a Soft Start Phase until t1 and a phase
from t1 until t2 where maximum power is provided if
demanded by the FB signal.
Soft-Start
Comparator
&
t2 t
CS
0.6V
Figure 4
Soft Start
At the beginning of the Startup Phase, the IC provides
a Soft Start duration whereby it controls the maximum
primary current by means of a duty cycle limitation. A
capacitor CSofts in combination with the internal pull up
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
3.4
PWM Section
0.75
3.4.2
PWM-Latch FF1
The oscillator clock output provides a set pulse to the
PWM-Latch when initiating the internal CoolMOS®
conduction. After setting the PWM-Latch can be reset
by the PWM comparator, the Soft Start comparator or
the Current-Limit comparator. In case of resetting the
driver is shut down immediately.
PWM Section
Oscillator
Duty
Cycle
max
3.4.3
Gate Driver
The Gate Driver is a fast totem pole gate drive which is
designed to avoid cross conduction currents.
The Gate Driver is active low at voltages below the
undervoltage lockout threshold VVCCoff.
Clock
Frequency
Jitter
Soft Start
Comparator
FF1
1
PWM
Comparator
G8
Gate Driver
S
R
Q
&
G9
VCC
Current
Limiting
PWM-Latch
1
SoftS
Gate
Gate
Depl. CoolMOS™
Figure 6
PWM Section
3.4.1
Oscillator and Jittering
The oscillator generates a fixed frequency with
frequency jittering of ±4% from the fixed frequency
(which is ±2.7kHz from 67kHz) at a jittering period TFJ.
The switching frequency is fswitch = 67kHz.
A resistor, a capacitor and a current source and current
sink which determine the frequency are integrated. The
charging and discharging current of the implemented
oscillator capacitor are internally trimmed, in order to
achieve a very accurate switching frequency. The ratio
of controlled charge to discharge current is adjusted to
reach a maximum duty cycle limitation of D max=0.75.
Once the Soft Start period is over and when the IC goes
into normal mode, the Soft Start capacitor will be
charged and discharged through internal current
source, IFJ to generate a triangular waveform with a
jittering period TFJ which is externally adjustable by the
Soft Start capacitor, CSoftS (See Figure 4).
Gate Driver
Figure 7
Gate Driver
TFJ = kFJ * CSoftS
where kFJ is a constant = 4 ms/uF
eg. TFJ = 4 ms if CSoftS = 1uF
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
3.5
Current Limiting
3.5.1
Leading Edge Blanking
VSense
PWM Latch
FF1
Vcsth
tLEB = 220ns
Current Limiting
Propagation-Delay
Compensation
t
Figure 9
Vcsth
C10
PWM-OP
Each time when the integrated internal CoolMOS® is
switched on a leading edge spike is generated due to
the primary-side capacitances and secondary-side
rectifier reverse recovery time. This spike can cause
the gate drive to switch off unintentionally. To avoid a
premature termination of the switching pulse, this spike
is blanked out with a time constant of tLEB = 220ns.
During this time, the gate drive will not be switched off.
Leading
Edge
Blanking
220ns
&
G10
C12
0.32V
10k
D1
Active Burst
Mode
1pF
3.5.2
Current Limiting
There is a cycle by cycle Current Limiting realized by
the Current-Limit comparator C10 to provide an
overcurrent detection. The source current of the
integrated CoolMOS ® is sensed via an external sense
resistor RSense . By means of RSense the source current
is transformed to a sense voltage V Sense which is fed
into the pin CS. If the voltage VSense exceeds the
internal threshold voltage V csth the comparator C10
immediately turns off the gate drive by resetting the
PWM Latch FF1. A Propagation Delay Compensation
is added to support the immediate shut down without
delay of the integrated internal CoolMOS ® in case of
Current Limiting. The influence of the AC input voltage
on the maximum output power can thereby be avoided.
To prevent the Current Limiting from distortions caused
by leading edge spikes a Leading Edge Blanking is
integrated in the current sense path for the
comparators C10, C12 and the PWM-OP.
The output of comparator C12 is activated by the Gate
G10 if Active Burst Mode is entered. Once activated the
current limiting is thereby reduced to 0.32V. This
voltage level determines the power level when the
Active Burst Mode is left if there is a higher power
demand.
Version 2.9
Propagation Delay Compensation
In case of overcurrent detection, the switch-off of the
integrated internal CoolMOS® is delayed due to the
propagation delay of the circuit. This delay causes an
overshoot of the peak current Ipeak which depends on
the ratio of dI/dt of the peak current (see Figure 10).
CS
Figure 8
Leading Edge Blanking
ISense
Ipeak2
Ipeak1
ILimit
Signal2
IOvershoot2
Signal1
tPropagation Delay
IOvershoot1
t
Figure 10
Current Limiting
The overshoot of Signal2 is bigger than of Signal1 due
to the steeper rising waveform. This change in the
slope is depending on the AC input voltage.
Propagation Delay Compensation is integrated to limit
the overshoot dependency on dI/dt of the rising primary
current. That means the propagation delay time
between exceeding the current sense threshold Vcsth
and the switch off of the integrated inernal CoolMOS®
is compensated over temperature within a wide range.
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CoolSET®-F3
ICE3Bxx65J
3.6
Current Limiting is now possible in a very accurate way.
E.g. Ipeak = 0.5A with RSense = 2. Without Propagation
Delay Compensation the current sense threshold is set
to a static voltage level V csth=1V. A current ramp of
dI/dt = 0.4A/µs, that means dV Sense/dt = 0.8V/µs, and a
propagation delay time of i.e. tPropagation Delay =180ns
leads then to an Ipeak overshoot of 14.4%. By means of
propagation delay compensation the overshoot is only
about 2% (see Figure 11).
with compensation
Control Unit
The Control Unit contains the functions for Active Burst
Mode and Auto Restart Mode. The Active Burst Mode
and the Auto Restart Mode are combined with an
Adjustable Blanking Window which is depending on the
external Soft Start capacitor. By means of this
Adjustable Blanking Window, the IC avoids entering
into these two modes accidentally. Furthermore it also
provides a certain time whereby the overload detection
is delayed. This delay is useful for applications which
normally works with a low current and occasionally
require a short duration of high current.
without compensation
V
1,3
3.6.1
1,25
Adjustable Blanking Window
VSense
1,2
1,15
1,1
SoftS
1,05
5V
S3
1
RSoftS
0,95
0,9
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
V
s
2
dVSense
dt
Figure 11
3.0V
Frequency
Jitter
S2
S1
Overcurrent Shutdown
The Propagation Delay Compensation is realized by
means of a dynamic threshold voltage V csth (see Figure
12). In case of a steeper slope the switch off of the
driver is earlier to compensate the delay.
C3
4.0V
VOSC
max. Duty Cycle
&
4.5V
C4
G5
Auto
Restart
Mode
off time
VSense
Propagation Delay
Active
Burst
Mode
t
&
Vcsth
FB
G6
C5
1.35V
Control Unit
Signal1
Figure 12
Version 2.9
Signal2
t
Figure 13
Adjustable Blanking Window
VSoftS swings between 3.2V and 3.6V after the SMPS is
settled and S2 is on while S3 is off, this is due to the
frequency jittering function that is making use of the
Soft Start pin. If overload occurs VFB is exceeding 4.5V.
Auto Restart Mode can’t be entered as the gate G5 is
still blocked by the comparator C3. But after VFB has
Dynamic Voltage Threshold V csth
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25 Mar 2013
CoolSET®-F3
ICE3Bxx65J
exceeded 4.5V the switch S2 is opened and S3 is
closed. The external Soft Start capacitor can now be
charged further by the integrated pull up resistor R SoftS
via switch S3. The comparator C3 releases the gates
G5 and G6 once V Softs has exceeded 4.0V. Therefore
there is no entering of Auto Restart Mode possible
during this charging time of the external capacitor
CSoftS. The same procedure happens to the external
Soft Start capacitor if a low load condition is detected
by comparator C5 when VFB is falling below 1.35V.
Only after V SoftS has exceeded 4.0V and V FB is still
below 1.35V Active Burst Mode is entered.
The Active Burst Mode is located in the Control Unit.
Figure 14 shows the related components.
3.6.2.1
Entering Active Burst Mode
The FB signal is always observed by the comparator
C5 if the voltage level falls below 1.35V. In that case the
switch S1 and S2 is released which allows the
capacitor CSoftS to be charged via S3 starting from the
swinging voltage level between 3.2V and 3.6V in
normal operating mode. If VSoftS exceeds 4.0V the
comparator C3 releases the gate G6 to enter the Active
Burst Mode. The time window that is generated by
combining the FB and SoftS signals with gate G6
avoids a sudden entering of the Active Burst Mode due
to large load jumps. This time window can be adjusted
by the external capacitor CSoftS.
After entering Active Burst Mode a burst flag is set and
the internal bias is switched off in order to reduce the
current consumption of the IC down to approx. 500uA.
Also, switch S1 is closed to clamped the Soft Start
voltage to 3.0V. In this Off State Phase the IC is no
longer self supplied so that therefore CVCC has to
provide the VCC current (see Figure 15). Furthermore
gate G11 is then released to start the next burst cycle
once VFB has 3.0V exceeded.
It has to be ensured by the application that the VCC
remains above the Undervoltage Lockout Level of
10.3V to avoid that the Startup Cell is accidentally
switched on. Otherwise power losses are significantly
increased. The minimum VCC level during Active Burst
Mode is depending on the load conditions and the
application. The lowest VCC level is reached at no load
conditions at VOUT .
3.6.2
Active Burst Mode
The controller provides Active Burst Mode for low load
conditions at V OUT. Active Burst Mode increases
significantly the efficiency at light load conditions while
supporting a low ripple on V OUT and fast response on
load jumps. During Active Burst Mode which is
controlled only by the FB signal the IC is always active
and can therefore immediately response on fast
changes at the FB signal. The Startup Cell is kept
switched off to avoid increased power losses for the
self supply.
SoftS
5V
S3
3.0V
RSoftS
Frequency
Jitter
S2
Internal Bias
S1
3.6.2.2
Working in Active Burst Mode
After entering the Active Burst Mode the FB voltage
rises as VOUT starts to decrease due to the inactive
PWM section. Comparator C6a observes the FB signal
if the voltage level 3.61V is exceeded. In that case the
internal circuit is again activated by the internal Bias to
start with switching. As now in Active Burst Mode the
gate G10 is released the current limit is only 0.32V to
reduce the conduction losses and to avoid audible
noise. If the load at VOUT is still below the starting level
for the Active Burst Mode the FB signal decreases
down to 3.0V. At this level C6b deactivates again the
internal circuit by switching off the internal Bias. The
gate G11 is released as after entering Active Burst
Mode the burst flag is set. If working in Active Burst
Mode the FB voltage is changing like a saw tooth
between 3.0V and 3.61V (see figure 15).
Current
Limiting
&
G10
C3
4.0V
4.5V
C4
FB
C5
&
G6
1.35V
Active
Burst
Mode
C6a
3.61V
&
G11
C6b
3.0V
Figure 14
Version 2.9
3.6.2.3
Leaving Active Burst Mode
The FB voltage immediately increases if there is a high
load jump. This is observed by comparator C4. As the
current limit is ca. 32% during Active Burst Mode a
certain load jump is needed that FB can exceed 4.5V.
At this time C4 resets the Active Burst Mode which also
Control Unit
Active Burst Mode
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CoolSET®-F3
ICE3Bxx65J
blocks C12 by the gate G10. Maximum current can now
be provided to stabilize V OUT.
VFB
Entering
Active Burst
Mode
4.5V
3.61V
3.0V
3.6.3
Protection Modes
The IC provides several protection features that
increase the SMPS system’s robustness and safety.
The following table shows the possible system failures
and the corresponding protection modes.
Leaving
Active Burst
Mode
1.35V
VSoftS
t
Blanking Window
4.0V
3.6V~
3.2V
3.0V
Auto Restart Mode I
Over temperature
Auto Restart Mode I
Overload
Auto Restart Mode II
Open Loop
Auto Restart Mode II
VCC Undervoltage
Auto Restart Mode II
Short Optocoupler
Auto Restart Mode II
3.6.3.1
VCS
1.0V
VCC Overvoltage
Auto Restart Mode I
SoftS
t
Current limit level
during Active Burst
Mode
C3
Auto
Restart
Mode
4.0V
0.32V
S
VVCC
t
&
R Q
UVLO
FF2
G13
Spike
Blanking
8.0us
VCC
10.3V
C13
&
20.5V
IVCC
t
G12
C4
2mA
Internal
Bias
4.5V
Thermal Shutdown
500uA
Tj >140°C
VOUT
t
FB
Max. Ripple < 1%
Figure 16
Version 2.9
Auto Restart Mode I
The VCC voltage is observed by comparator C13 if
20.5V is exceeded. The output of C13 is combined with
both the output of C3 which checks for VSoftS < 4.0V and
the output of C4 which checks for VFB > 4.5V. Therefore
the overvoltage detection can only be active during Soft
Start Phase (VSoftS < 4.0V) and when FB signal is
outside the operating range > 4.5V. This means any
t
Figure 15
Control Unit
Signals in Active Burst Mode
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CoolSET®-F3
ICE3Bxx65J
small voltage overshoots of VVCC during normal
operating cannot trigger the Auto Restart Mode I.
In Order to ensure system reliability and prevent any
false activation, a blanking time is implemented before
the IC can enter into the Auto Restart Mode I. The
output of the VCC overvoltage detection is fed into a
spike blanking with a time constant of 8.0us.
The other fault detection which can result in the Auto
Restart Mode I and has this 8.0us blanking time is the
Overtemperature detection. This block checks for a
junction temperature of higher than 140°C for
malfunction operation.
Once Auto Restart Mode is entered, the internal bias is
switched off in order to reduce the current consumption
of the IC as much as possible. In this mode, the
average current consumption is only 300uA as the only
working blocks are the reference block and the
Undervoltage Lockout(UVLO) which controls the
Startup Cell by switching on/off at V VCCon/VVCCoff.
As there is no longer a self supply by the auxiliary
winding, VCC starts to drop. The UVLO switches on the
integrated Startup Cell when VCC falls below 10.3V. It
will continue to charge VCC up to 18V whereby it is
switched off again and the IC enters into the Start Up
Phase.
As long as all fault conditions have been removed, the
IC will automatically power up as usual with switching
cycle at the GATE output after Soft Start duration. Thus
the name Auto Restart Mode.
3.6.3.2
This charging of the Soft Start capacitor from
3.2V~3.6V to 4.0V defines a blanking window which
prevents the system from entering into Auto Restart
Mode II unintentionally during large load jumps. In this
event, FB will rise close to 5.0V for a short duration
before the loop regulates with FB less than 4.5V. This
is the same blanking time window as for the Active
Burst Mode and can therefore be adjusted by the
external CSoftS.
In case of VCC undervoltage, ie. VCC falls below
10.3V, the IC will be turned off with the Startup Cell
charging VCC as described earlier in this section. Once
VCC is charged above 18V, the IC will start a new
startup cycle. The same procedure applies when the
system is under Short Optocoupler fault condition, as it
will lead to VCC undervoltage.
Auto Restart Mode II
Internal
Bias
SoftS
C3
4.0V
&
4.5V
C4
G5
Auto
Restart
Mode
FB
Control Unit
Figure 17
Auto Restart Mode II
In case of Overload or Open Loop, FB exceeds 4.5V
which will be observed by C4. At this time, the external
Soft Start capacitor can now be charged further by the
integrated pull up resistor R SoftS via switch S3 (see
Figure 13). If V SoftS exceeds 4.0V which is observed by
C3, Auto Restart Mode II is entered as both inputs of
the gate G5 are high.
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
4
Electrical Characteristics
Note:
All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other ratings are
not violated.
4.1
Note:
Absolute Maximum Ratings
Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction
of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 7
(VCC) is discharged before assembling the application circuit.
Parameter
Symbol
Limit Values
Unit
Remarks
Tj = 110°C
min.
max.
VDS
-
650
V
ICE3B0365J
ID_Puls1
-
1.6
A
ICE3B0565J
ID_Puls2
-
2.3
A
ICE3B1565J
ID_Puls3
-
6.1
A
ICE3B2065J
ID_Puls4
-
10.3
A
ICE3B0365J
EAR1
-
0.005
mJ
ICE3B0565J
EAR2
-
0.01
mJ
ICE3B1565J
EAR3
-
0.15
mJ
ICE3B2065J
EAR4
-
0.4
mJ
ICE3B0365J
IAR1
-
0.3
A
ICE3B0565J
IAR2
-
0.5
A
ICE3B1565J
IAR3
-
1.5
A
ICE3B2065J
IAR4
-
2.0
A
VCC Supply Voltage
VVCC
-0.3
27
V
FB Voltage
VFB
-0.3
5.5
V
SoftS Voltage
VSoftS
-0.3
5.5
V
CS Voltage
VCS
-0.3
5.5
V
Junction Temperature
Tj
-40
150
°C
Storage Temperature
TS
-55
150
°C
Thermal Resistance
Junction-Ambient
RthJA
-
90
K/W
PG-DIP-8
ESD Capability
VESD
-
2
kV
Human body model2)
Drain Source Voltage
Pulse drain current,
tp limited by max.
Tj=150°C
Avalanche energy,
repetitive tAR limited
by max. Tj=150°C1)
Avalanche current,
repetitive tAR limited
by max. Tj=150°C1)
Controller & CoolMOS®
1)
Repetetive avalanche causes additional power losses that can be calculated as PAV=EAR* f
2)
According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kW series resistor)
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
4.2
Note:
Operating Range
Within the operating range the IC operates as described in the functional description.
Parameter
Symbol
Limit Values
min.
max.
Unit
VCC Supply Voltage
VVCC
V VCCoff
26
V
Junction Temperature of Controller
TjCon
-25
130
°C
Junction Temperature of
CoolMOS ®
TJCoolMOS
-25
150
°C
4.3
4.3.1
Note:
Remarks
Max value limited due to
integrated thermal shut down
Characteristics
Supply Section
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage
and junction temperature range TJ from – 25 oC to 130 oC. Typical values represent the median values,
which are related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
Start Up Current
IVCCstart
-
300
450
mA
V VCC = 17V
VCC Charge Current
IVCCcharge1
-
-
5.0
mA
V VCC = 0V
IVCCcharge2
0.55
1.05
1.60
mA
V VCC = 1V
IVCCcharge3
-
0.88
-
mA
V VCC = 17V
Leakage Current of
Start Up Cell & CoolMOS
IStartLeak
-
0.2
50
mA
V Drain= 450V
at T j = 100°C
Supply
ICE3B0365J
Current with ICE3B0565J
Inactive Gate ICE3B1565J
IVCCsup_ng1
-
1.7
2.5
mA
Soft Start pin is open
ICE3B2065J
IVCCsup_ng2
-
3.3
4.2
mA
Supply Current with Active Gate IVCCsup_g
-
2.5
3.6
mA
V SoftS = 3.0V
IFB = 0
Supply Current in
Auto Restart Mode
with Inactive Gate
IVCCrestart
-
300
-
mA
IFB = 0
ISofts = 0
Supply Current in
Active Burst Mode
with Inactive Gate
IVCCburst1
-
500
950
uA
V FB = 2.5V
V SoftS = 3.0V
IVCCburst2
-
500
950
uA
V VCC = 11.5V
V FB = 2.5V
V SoftS = 3.0V
VCC Turn-On Threshold
VCC Turn-Off Threshold
VCC Turn-On/Off Hysteresis
VVCCon
VVCCoff
VVCChys
17.0
9.6
-
18.0
10.3
7.7
19.0
11.0
-
V
V
V
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
4.3.2
Internal Voltage Reference
Parameter
Trimmed Reference Voltage
4.3.3
Symbol
VREF
Limit Values
min.
typ.
max.
4.90
5.00
5.10
Unit
Test Condition
V
measured at pin FB
IFB = 0
Unit
Test Condition
PWM Section
Parameter
Symbol
Limit Values
min.
typ.
max.
fOSC3
58
67
76
kHz
fOSC4
62
67
74.5
kHz
Tj = 25°C
Frequency Jittering Range
fdelta
-
±2.7
-
kHz
Tj = 25°C
Max. Duty Cycle
Dmax
0.70
0.75
0.80
Min. Duty Cycle
Dmin
0
-
-
PWM-OP Gain
AV
3.0
3.2
3.4
Max. Level of Voltage Ramp
VMax-Ramp
-
0.6
-
V
VFB Operating Range Min Level VFBmin
-
0.5
-
V
VFB Operating Range Max level
VFBmax
-
-
4.3
V
Feedback Pull-Up Resistor
RFB
9
14
22
kW
Soft-Start Pull-Up Resistor
RSoftS
30
45
62
kW
Fixed Oscillator Frequency
1)
V FB < 0.3V
CS=1V limited by
Comparator C41)
This parameter is not subject to production test - verified by design/characterization
4.3.4
Control Unit
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
V FB = 5V
Deactivation Level for SoftS
Comparator C7 by C2
VSoftSC2
2.98
3.10
3.22
V
Clamped V SoftS Voltage during
Burst Mode
VSoftSclmp_bm 2.88
3.00
3.12
V
Activation Limit of
Comparator C3
VSoftSC3
3.85
4.00
4.15
V
V FB = 5V
SoftS Startup Current
ISoftSstart
-
0.9
-
mA
V SoftS = 0V
Over Load & Open Loop
Detection Limit for
Comparator C4
VFBC4
4.33
4.50
4.67
V
V SoftS = 4.5V
Active Burst Mode Level for
Comparator C5
VFBC5
1.23
1.35
1.43
V
V SoftS = 4.5V
Active Burst Mode Level for
Comparator C6a
VFBC6a
3.48
3.61
3.76
V
After Active Burst
Mode is entered
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
Active Burst Mode Level for
Comparator C6b
VFBC6b
2.88
3.00
3.12
V
After Active Burst
Mode is entered
Overvoltage Detection Limit
VVCCOVP
19.5
20.5
21.5
V
V FB = 5V, VSoftS = 3V
TjSD
130
140
150
°C
tSpike
-
8.0
-
ms
Thermal Shutdown
1)
Spike Blanking
1)
The parameter is not subject to production test - verified by design/characterization
Note:
The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP
4.3.5
Current Limiting
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
dVsense / dt = 0.6V/ms
Peak Current Limitation (incl.
Propagation Delay Time)
(see Figure 11)
Vcsth
1.01
1.06
1.11
V
Peak Current Limitation during
Active Burst Mode
VCS2
0.27
0.32
0.37
V
Leading Edge Blanking
tLEB
-
220
-
ns
V SoftS = 3.0V
CS Input Bias Current
ICSbias
-1.0
-0.2
0
µA
V CS = 0V
Unit
Test Condition
4.3.6
CoolMOS® Section
Parameter
Symbol
Limit Values
min.
typ.
max.
Drain Source Breakdown
Voltage
V(BR)DSS
600
650
-
-
V
V
Tj = 25°C
Tj = 110°C
Drain Source
On-Resistance
ICE3B0365J
RDSon1
-
6.45
13.70
7.50
17.00
W
W
Tj = 25°C
Tj = 125°C1)
at ID = 0.3A
ICE3B0565J
RDSon2
-
4.70
10.00
5.44
12.50
W
W
Tj = 25°C
Tj = 125°C1)
at ID = 0.5A
ICE3B1565J
RDSon3
-
1.70
3.57
1.96
4.12
W
W
Tj = 25°C
Tj = 125°C1)
at ID = 1.5A
ICE3B2065J
RDSon4
-
0.92
1.93
1.05
2.22
W
W
Tj = 25°C
Tj = 125°C1)
at ID = 2.0A
ICE3B0365J
Co(er)1
-
3.65
-
pF
V DS = 0V to 480V
ICE3B0565J
Co(er)2
-
4.75
-
pF
ICE3B1565J
Co(er)3
-
11.63
-
pF
ICE3B2065J
Co(er)4
-
21
-
pF
Effective output
capacitance,
energy related
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
Rise Time
trise
-
302)
-
ns
Fall Time
tfall
-
302)
-
ns
1)
The parameter is not subject to production test - verified by design/characterization
2)
Measured in a Typical Flyback Converter Application
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
5
Temperature derating curve
Figure 18
Safe Operating area ( SOA ) curve for ICE3B0365J
Figure 19
Safe Operating area ( SOA ) curve for ICE3B0565J
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
Figure 20
Safe Operating area ( SOA ) curve for ICE3B1565J
Figure 21
Safe Operating area ( SOA ) curve for ICE3B2065J
Version 2.9
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CoolSET®-F3
ICE3Bxx65J
Figure 22
Version 2.9
SOA temperature derating coefficient curve
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25 Mar 2013
CoolSET®-F3
ICE3Bxx65J
6
Outline Dimension
PG-DIP-8
(Plastic Dual In-Line Outline)
Figure 23
Version 2.9
PG-DIP-8 ( Pb-free lead plating Platic Dual-in-Line Outline )
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25 Mar 2013
CoolSET®-F3
ICE3Bxx65J
7
Marking
Marking
Figure 24
Marking for ICE3B0365J
Marking
Figure 25
Version 2.9
Marking for ICE3B0565J
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CoolSET®-F3
ICE3Bxx65J
Marking
Figure 26
Marking for ICE3B1565J
Marking
Figure 27
Version 2.9
Marking for ICE3B2065J
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25 Mar 2013
CoolSET®-F3
ICE3Bxx65J
Schematic for recommended PCB layout
8
Schematic for recommended PCB layout
Figure 28
Schematic for recommended PCB layout
General guideline for PCB layout design using F3 CoolSET (refer to Figure 26):
1. “Star Ground “at bulk capacitor ground, C11:
“Star Ground “means all primary DC grounds should be connected to the ground of bulk capacitor C11
separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET device
effectively. The primary DC grounds include the followings.
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.
b. DC ground of the current sense resistor, R12
c. DC ground of the CoolSET device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector of
IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground.
d. DC ground from bridge rectifier, BR1
e. DC ground from the bridging Y-capacitor, C4
2. High voltage traces clearance:
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.
a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm
b. 600V traces (drain voltage of CoolSET IC11) to nearby trace: > 2.5mm
3. Filter capacitor close to the controller ground:
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pin
as possible so as to reduce the switching noise coupled into the controller.
Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 26):
1. Add spark gap
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated
charge during surge test through the sharp point of the saw-tooth plate.
a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1:
Gap separation is around 1.5mm (no safety concern)
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CoolSET®-F3
ICE3Bxx65J
Schematic for recommended PCB layout
b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND:
These 2 Spark Gaps can be used when the lightning surge requirement is >6KV.
230Vac input voltage application, the gap separation is around 5.5mm
115Vac input voltage application, the gap separation is around 3mm
2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input
3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12:
The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET and
reduce the abnormal behavior of the CoolSET. The diode can be a fast speed diode such as IN4148.
The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through the
sensitive components such as the primary controller, IC11.
Version 2.9
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Qualität hat für uns eine umfassende
Bedeutung. Wir wollen allen Ihren
Ansprüchen in der bestmöglichen
Weise gerecht werden. Es geht uns also
nicht nur um die Produktqualität –
unsere Anstrengungen gelten
gleichermaßen der Lieferqualität und
Logistik, dem Service und Support
sowie allen sonstigen Beratungs- und
Betreuungsleistungen.
Quality takes on an allencompassing
significance at Semiconductor Group.
For us it means living up to each and
every one of your demands in the best
possible way. So we are not only
concerned with product quality. We
direct our efforts equally at quality of
supply and logistics, service and
support, as well as all the other ways in
which we advise and attend to you.
Dazu gehört eine bestimmte
Geisteshaltung unserer Mitarbeiter.
Total Quality im Denken und Handeln
gegenüber Kollegen, Lieferanten und
Ihnen, unserem Kunden. Unsere
Leitlinie ist jede Aufgabe mit „Null
Fehlern“ zu lösen – in offener
Sichtweise auch über den eigenen
Arbeitsplatz hinaus – und uns ständig
zu verbessern.
Part of this is the very special attitude of
our staff. Total Quality in thought and
deed, towards co-workers, suppliers
and you, our customer. Our guideline is
“do everything with zero defects”, in an
open manner that is demonstrated
beyond your immediate workplace, and
to constantly improve.
Unternehmensweit orientieren wir uns
dabei auch an „top“ (Time Optimized
Processes), um Ihnen durch größere
Schnelligkeit den entscheidenden
Wettbewerbsvorsprung zu verschaffen.
Geben Sie uns die Chance, hohe
Leistung durch umfassende Qualität zu
beweisen.
Wir werden Sie überzeugen.
http://www.infineon.com
Published by Infineon Technologies AG
Throughout the corporation we also
think in terms of Time Optimized
Processes (top), greater speed on our
part to give you that decisive
competitive edge.
Give us the chance to prove the best of
performance through the best of quality
– you will be convinced.
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