BSI BS616LV2021AI Very low power/voltage cmos sram 128k x 16 or 256k x 8 bit switchable Datasheet

BSI
Very Low Power/Voltage CMOS SRAM
128K x 16 or 256K x 8 bit switchable
BS616LV2021
„ DESCRIPTION
„ FEATURES
The BS616LV2021 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits or
262,144 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.1uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW output
enable(OE) and three-state output drivers.
The BS616LV2021 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2021 is available in DICE form and 48-pin BGA type.
• Very low operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
Vcc = 3.0V
C-grade: 20mA (Max.) operating current
I-grade: 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
Vcc = 5.0V
C-grade: 40mA (Max.) operating current
I-grade: 45mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns (Max.) at Vcc = 3.0V
-10
100ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
„ PRODUCT FAMILY
PRODUCT
FAMILY
BS616LV2021DC
BS616LV2021AC
BS616LV2021DI
BS616LV2021AI
OPERATING
TEMPERATURE
Vcc
RANGE
+0 O C to +70 O C
2.4V ~ 5.5V
-40 O C to +85 O C
2.4V ~ 5.5V
„ PIN CONFIGURATION
POWER DISSIPATION
STANDBY
Operating
SPEED
( ns )
(ICCSB1, Max )
Vcc=
3.0V
PKG TYPE
(ICC, Max )
Vcc=
3.0V
Vcc=
5.0V
Vcc=
3.0V
Vcc=
5.0V
70 / 100
0.7uA
6uA
20mA
40mA
70 / 100
1.5uA
25uA
25mA
45mA
DICE
BGA-48-0608
DICE
BGA-48-0608
„ BLOCK DIAGRAM
A15
A14
A13
A12
Address
A11
A10
Input
A9
A8
Buffer
20
1024
Row
Memory Array
Decoder
1024 x 2048
A7
A6
2048
16(8)
D0
.
.
.
.
.
.
.
.
Data
Input
Buffer
16(8)
Column I/O
Write Driver
Sense Amp
16(8)
16(8)
128(256)
Data
Output
Buffer
D15
Column Decoder
CE1
CE2
WE
OE
UB
LB
CIO
14(16)
Control
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5
(SAE)
Vdd
Vss
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616LV2021
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Revision 2.4
April 2002
BSI
BS616LV2021
„ PIN DESCRIPTIONS
Name
Function
A0-A16 Address Input
These 17 address inputs select one of the 131,072 x 16-bit words in the RAM.
SAE Address Input
This address input incorporates with the above 17 address input select one of the
262,144 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH.
CIO x8/x16 select input
This input selects the organization of the SRAM. 131,072 x 16-bit words configuration
is selected if CIO is HIGH. 262,144 x 8-bit bytes configuration is selected if CIO is
LOW.
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active to read
from or write to the device. If either chip enable is not active, the device is deselected
and is in a standby power mode. The DQ pins will be in the high impedance state
when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins. The chip is deselected when
both LB and UB pins are HIGH.
D0 - D15 Data Input/Output Ports
These 16 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
R0201-BS616LV2021
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Revision 2.4
April 2002
BSI
BS616LV2021
„ TRUTH TABLE
MODE
CE1
CE2
H
X
Fully Standby
Output Disable
Read from SRAM
X
L
L
H
L
H
OE
WE
CIO
X
X
X
H
L
H
X
H
H
( WORD mode )
LB
UB
SAE
D0~7
D8~15
VCC Current
X
X
X
X
X
High-Z
High-Z
ICCSB, ICCSB1
X
X
X
High-Z
High-Z
ICC
L
H
Dout
High-Z
H
L
High-Z
Dout
L
L
Dout
Dout
L
H
Din
X
H
L
X
Din
L
L
Din
Din
X
ICC
Write to SRAM
L
H
X
L
H
( WORD mode )
X
ICC
Read from SRAM
L
H
L
H
L
X
X
A-1
Dout
High-Z
ICC
L
H
X
L
L
X
X
A-1
Din
X
ICC
( BYTE Mode )
Write to SRAM
( BYTE Mode )
„ ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
PARAMETER
„ OPERATING RANGE
RATING
UNITS
-0.5 to
Vcc+0.5
V
VTERM
Terminal Voltage with
Respect to GND
TBIAS
Temperature Under Bias
-40 to +125
O
C
TSTG
Storage Temperature
-60 to +150
O
C
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0 O C to +70 O C
2.4V ~ 5.5V
Industrial
-40 O C to +85 O C
2.4V ~ 5.5V
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
R0201-BS616LV2021
3
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
VIN=0V
6
pF
VI/O=0V
8
pF
1. This parameter is guaranteed and not tested.
Revision 2.4
April 2002
BSI
BS616LV2021
„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP.(1) MAX.
VIL
Guaranteed Input Low
Voltage(2)
Vcc=3V
VIH
Guaranteed Input High
Voltage(2)
Vcc=3V
2.0
Vcc=5V
2.2
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
IOL
Output Leakage Current
Vcc = Max, CE1 = VIH or CE2=VIL or OE = VIH,
VI/O = 0V to Vcc
VOL
Output Low Voltage
Vcc = Max, I OL = 2mA
VOH
Output High Voltage
Vcc = Min, I OH = -1mA
ICC
Operating Power Supply
Current
Vcc = Max, CE1= VIL, CE2=VIH
IDQ = 0mA, F = Fmax(3)
ICCSB
Standby Current-TTL
Vcc = Max, CE1 = VIH or CE2=VIL
IDQ = 0mA
Standby Current-CMOS
Vcc = Max, CE1ЊVcc-0.2V or
CE2Љ0.2V,
Other inputs Њ Vcc - 0.2V or
VINЉ0.2V
ICCSB1
--
0.8
V
--
Vcc+0.2
V
--
--
1
uA
--
--
1
uA
--
--
0.4
V
2.4
--
--
V
Vcc=3V
--
--
20
Vcc=5V
--
--
40
Vcc=3V
--
--
0.5
Vcc=5V
--
--
1
Vcc=3V
--
0.1
Vcc=5V
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
-0.5
UNITS
mA
mA
0.7
uA
Vcc=5V
--
0.6
6
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
R0201-BS616LV2021
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Revision 2.4
April 2002
BSI
BS616LV2021
„ DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
VDR
Vcc for Data Retention
CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V or
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
ICCDR
Data Retention Current
CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
tCDR
Chip Deselect to Data
Retention Time
MIN. TYP.
(1)
MAX.
UNITS
1.5
--
--
V
--
0.05
0.5
uA
0
--
--
ns
TRC (2)
--
--
ns
See Retention Waveform
tR
Operation Recovery Time
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
„ LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
Vcc
VDR Њ 1.5V
Vcc
CE1
Vcc
tR
t CDR
CE1 Њ Vcc - 0.2V
VIH
VIH
„ LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
Vcc
VDR Њ 1.5V
Vcc
CE2
R0201-BS616LV2021
VIL
Vcc
tR
t CDR
CE2 Љ 0.2V
5
VIL
Revision 2.4
April 2002
BSI
BS616LV2021
„ AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output
Timing Reference Level
„ KEY TO SWITCHING WAVEFORMS
Vcc/0V
5ns
WAVEFORM
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM H TO L
WILL BE
CHANGE
FROM H TO L
1269 Ω
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
5PF
DON T CARE:
ANY CHANGE
PERMITTED
CHANGE :
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
0.5Vcc
„ AC TEST LOADS AND WAVEFORMS
1269 Ω
3.3V
3.3V
OUTPUT
OUTPUT
,
100PF
INCLUDING
JIG AND
SCOPE
INCLUDING
JIG AND
SCOPE
1404 Ω
1404 Ω
FIGURE 1A
FIGURE 1B
THEVENIN EQUIVALENT
667 Ω
OUTPUT
1.73V
ALL INPUT PULSES
Vcc
GND
10%
→
90% 90%
→
←
10%
← 5ns
FIGURE 2
„ AC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC, Vcc =3.0V )
READ CYCLE
JEDEC
PARAMETER
PARAMETER
NAME
NAME
BS616LV2021-70
MIN. TYP. MAX.
DESCRIPTION
BS616LV2021-10
MIN. TYP. MAX.
UNIT
tAVAX
tRC
Read Cycle Time
70
--
--
100
--
--
ns
tAVQV
tAA
Address Access Time
--
--
70
--
--
100
ns
t E1LQV
t ACS1
Chip Select Access Time
(CE1)
--
--
70
--
--
100
ns
t E2LQV
t ACS2
Chip Select Access Time
(CE2)
--
--
70
--
--
100
ns
tBA
tBA
Data Byte Control Access Time
(LB,UB)
--
--
35
--
--
50
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
35
--
--
50
ns
tELQX
tCLZ
Chip Select to Output Low Z
(CE1,CE2)
10
--
--
15
--
--
ns
tBE
tBE
Data Byte Control to Output Low Z
(LB,UB)
10
--
--
15
--
--
ns
tGLQX
tOLZ
Output Enable to Output in Low Z
10
--
--
15
--
--
ns
tEHQZ
tCHZ
Chip Deselect to Output in High Z
(CE1,CE2)
0
--
35
0
--
40
ns
tBDO
tBDO
Data Byte Control to Output High Z
(LB, UB)
0
--
35
0
--
40
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
0
--
30
0
--
35
ns
tAXOX
tOH
Output Disable to Address Change
10
--
--
15
--
--
ns
(1)
NOTE :
1. tBA is 35ns/50ns (@speed=70ns/100ns) with address toggle .
tBA is 70ns/100ns (@speed=70ns/100ns) without address toggle .
R0201-BS616LV2021
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Revision 2.4
April 2002
BSI
BS616LV2021
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
ADDRESS
t
t
t OH
AA
OH
D OUT
READ CYCLE2 (1,3,4)
CE2
t
ACS2
t
ACS1
CE1
t
(5)
t
(5)
CLZ
CHZ
D OUT
READ CYCLE3 (1,4)
t RC
ADDRESS
t
AA
OE
t
CE2
t
t
CE1
t
t
t
OE
OH
ACS2
OLZ
t
ACS1
(5)
CLZ
OHZ
(5)
(1,5)
t
CHZ
t
BDO
LB,UB
t
BE
t
BA
D OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2 = VIH.
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = VIL .
5. Transition is measured ± 500mV from steady state with CL = 30pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
R0201-BS616LV2021
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Revision 2.4
April 2002
BSI
BS616LV2021
„ AC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC, Vcc =3.0V )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVWL
tAVWH
tWLWH
tWHAX
tBW
tWLQZ
tDVWH
tWHDX
tGHQZ
tWC
tCW
t AS
t AW
tWP
tWR
tBW (1)
tWHZ
tDW
tDH
tOHZ
tWHOX
tOW
tAVAX
t E1LWH
BS616LV2021-70
MIN. TYP. MAX.
DESCRIPTION
BS616LV2021-10
MIN. TYP. MAX.
UNIT
Write Cycle Time
70
--
--
100
--
--
ns
Chip Select to End of Write
70
--
--
100
--
--
ns
Address Setup Time
0
--
--
0
--
--
ns
Address Valid to End of Write
70
--
--
100
--
--
ns
Write Pulse Width
Write recovery Time
35
--
--
50
--
--
ns
0
--
--
0
--
--
ns
(CE2, CE1,WE)
30
--
--
40
--
--
ns
Write to Output in High Z
(LB,UB)
0
--
30
0
--
40
ns
Data to Write Time Overlap
30
--
--
40
--
--
ns
Data Hold from Write Time
0
--
--
0
--
--
ns
Output Disable to Output in High Z
0
--
30
0
--
40
ns
End of Write to Output Active
5
--
--
10
--
--
ns
Date Byte Control to End of Write
NOTE :
1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle .
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t
WC
ADDRESS
t
(3)
WR
OE
CE2
(5)
(11)
t CW
(5)
CE1
t
t
WE
BW
(5)
LB,UB
(3)
AW
t WP
t AS
(2)
(4,10)
t OHZ
D OUT
t
t
DH
DW
D IN
R0201-BS616LV2021
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Revision 2.4
April 2002
BSI
BS616LV2021
WRITE CYCLE2 (1,6)
t
WC
ADDRESS
CE2
(11)
t
(5)
CE1
t
BW
(5)
LB,UB
t
WE
CW
AW
t
t WP
WR
(3)
(2)
t DH
t AS
(4,10)
t WHZ
D OUT
(7)
(8)
t DW
t
DH
(8,9)
D IN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low.
All signals must be active to initiate a write and any one signal can terminate
a write by going inactive. The data input setup and hold timing should be referenced to the
second transition edge of the signal that terminates the write.
3. TWR is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite
phase to the outputs must not be applied.
5. If the CE2 high transition or CE1 low transition or LB,UB low transition occurs simultaneously with the WE low transitions
or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the
data input signals of opposite phase to the outputs must not be applied to them.
10. Transition is measured ± 500mV from steady state with CL = 30pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE2 going high or CE1 going low to the end of write.
R0201-BS616LV2021
9
Revision 2.4
April 2002
BSI
BS616LV2021
„ ORDERING INFORMATION
BS616LV2021
X X
-- Y Y
SPEED
70: 70ns
10: 100ns
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
A :BGA - 48 PIN(6x8mm)
D :DICE
„ PACKAGE DIMENSIONS
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
1.4 Max.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
BALL PITCH e = 0.75
D
E
N
D1
E1
8.0
6.0
48
5.25
3.75
E1
e
D1
VIEW A
48 mini-BGA (6 x 8mm)
R0201-BS616LV2021
10
Revision 2.4
April 2002
BSI
BS616LV2021
REVISION HISTORY
Revision
Description
Date
2.2
2001 Data Sheet release
Apr. 15, 2001
2.3
Modify Standby Current (Typ. and
Max.)
Jun. 29, 2001
2.4
Modify some AC parameters.
Modify 5V ICCSB1_Max(I-grade)
from 10uA to 25uA.
April,15,2002
R0201-BS616LV2021
11
Note
Revision 2.4
April 2002
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