Yea Shin GBJ20005 20a glass passivated bridge rectifier Datasheet

DATA SHEET
GBJ20005 THRU GBJ2010
SEMICONDUCTOR
20A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
GBJ
•Glass Passivated Die Construction
•High Case Dielectric Strength of 1500VRMS
•Low Reverse Leakage Current
•Surge Overload Rating to 240A Peak
•Ideal for Printed Circuit Board Applications
A
K
Classification 94V-0
_
J
Index, File Number E94661
•High temperature soldering : 260OC / 10 seconds at terminals
•Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
B
A
29.70
30.30
19.70
20.30
M
C
17.00
18.00
D
3.80
4.20
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
P
I
0.90
1.10
J
2.30
2.70
R
K
N
C
I
MECHANICAL DATA
G
•Case: Molded Plastic
E
Max
B
S
D
H
Min
L
•Plastic Material - UL Flammability
•UL Listed Under Recognized Component
Dim
E
•Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity: Molded on Body
3.0 X 45°
L
4.40
4.80
M
3.40
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
•Mounting: Through Hole for #6 Screw
•Mounting Torque: 5.0 in-lbs Maximum
•Weight: 6.6 grams (approx)
•Marking: Type Number
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
Characteristic
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Average Forward Rectified Output Current @ TC= 100℃
GBJ
GBJ
GBJ
GBJ
GBJ
GBJ
GBJ
20005
2001
2002
2004
2006
2008
2010
50
100
200
400
600
800
1000
35
70
140
280
420
560
700
Unit
V
V
IO
20
A
IFSM
240
A
VFM
1.05
V
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
@ IF =10A
Peak Reverse Current
@TC = 25℃
at Rated DC Blocking Voltage
@ TC = 125℃
10
IR
500
μA
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
240
Typical Junction Capacitance per Element (Note 2)
Cj
60
pF
R_JC
0.8
℃/W
Tj, TSTG
-65 to +150
℃
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
A2s
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
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REV.02 20120305
DEVICE CHARACTERISTICS
GBJ20005 THRU GBJ2010
20
With heatsink
15
10
Without heatsink
5
Resistive or
Inductive load
0
25
50
75
100
125
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
25
150
10
1.0
0.1
Tj = 25°C
Pulse width = 300µs
0.01
100
Tj = 25°C
Single half-sine-wave
(JEDEC method)
200
150
100
50
0
1
1.6
2.0
Tj = 25°C
f = 1MHz
1
1
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
1.2
10
100
10
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
250
0.4
0
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
1000
100
Tj = 125°C
Tj = 100°C
10
Tj = 50°C
1.0
Tj = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
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REV.02 20120305
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