Diode Semiconductor Korea ERC38-04 --- ERC38-06 VOLTAGE RANGE: 400 --- 600 V CURRENT: 1.0 A HIGH EFFICIENCY RECTIFIERS FEATURES Low cost Diffused junction DO - 41 Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Dimensions in millimeters Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERC38 - 04 ERC38 - 05 ERC38 - 06 UNITS Maximum recurrent peak reverse voltage VRRM 400 500 600 V Maximum RMS voltage VRMS 280 350 420 V Maximum DC blocking voltage VDC 400 500 600 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 1.0 A IFSM 40.0 A VF 2.5 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.0A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 5.0 IR 50 Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ Typical thermal resistance (Note3) RθJA 60 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range Ａ 50.0 20 ns 15 pF /W NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea ERC38-04 -- ERC38-06 FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N1. trr 10 N1. +0.5A D.U.T. (+) PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) OSCILLOSCOPE (NOTE1) 1 NONINDUCTIVE 0 -0.25A (-) -1 .0 A 1cm NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF 2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω. 1 Single Phase Half Wave 60Hz Resisive or Inductive Load 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 150 60 40 ERC38-04---ERC38-05 20 10 ERC38-06 4 TJ=25 2 1 0.1 0.2 TJ=125 8.3ms Single Half Sine-Wave 30 AMPERES 25 20 15 10 5 0 1 2 4 8 10 20 1 2 4 10 20 40 100 40 60 80 100 NUMBER OF CYCLES AT 60 Hz FIG.5 -- TYPICAL FORWARD CHARACTERISTIC 10 1.0 AMPERES 40 35 0.4 REVERSE VOLTAGE,VOLTS INSTANTANEOUS FORWARD CURRENT AMBIENT TEMPERATURE. FIG.4--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. 200 100 JUNCTION CAPACITANCE,pF 1.2 0.8 FIG.3--TYPICAL JUNCTION CAPACITANCE Z 1.4 AMPERES AVERAGE FORWARD RECTIFIED CURRENT. FIG.2 --FORWARD DERATING CURVE SET TIME BASE FOR 20/30 ns/cm 0.1 0.01 0 T J=25 Pulse Width=300 µS 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS www.diode.kr