MITSUBISHI Nch POWER MOSFET FS10VS-5 HIGH-SPEED SWITCHING USE FS10VS-5 OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 0 +0.3 –0 (1.5) 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 250V ¡rDS (ON) (MAX) .............................................................. 0.52Ω ¡ID ......................................................................................... 10A 2.6 ± 0.4 4.5 0.8 e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg — Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 250 ±30 V V 10 30 90 A A W –55 ~ +150 –55 ~ +150 1.2 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS10VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. 250 ±30 — — — — — — ±10 V V µA — 2 — — — 3 0.40 2.0 1 4 0.52 2.6 mA V Ω V 4.0 — — — 6.0 570 110 20 — — — — S pF pF pF — — — — 17 25 60 30 — — — — ns ns ns ns — 1.5 2.0 V — — 1.39 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES 80 60 40 20 0 MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 0 50 100 150 tw=10µs 101 7 5 3 2 100µs 1ms 100 7 5 3 2 10ms DC TC = 25°C Single Pulse 10–1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V TC = 25°C Pulse Test 16 7V 12 PD = 90W 6V 8 4 OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 90W 6V 10 DRAIN CURRENT ID (A) 20 DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) 5V 8 6 5.5V 4 5V 2 TC = 25°C Pulse Test 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10VS-5 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 TC = 25°C Pulse Test 32 24 16 ID = 20A 15A 10A 8 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 5A 0 0 4 8 12 16 0.2 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 0.4 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 16 8 4 8 12 16 75°C 125°C 100 7 5 3 2 100 20 TC = 25°C 3 2 10–1 VDS = 10V Pulse Test 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 5 Ciss 3 2 Coss 3 Tch = 25°C 2 f = 1MHz Crss VGS = 0V 1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) 3 2 CAPACITANCE Ciss, Coss, Crss (pF) 20V TRANSFER CHARACTERISTICS (TYPICAL) 24 102 7 5 0.6 DRAIN CURRENT ID (A) 32 103 7 5 VGS = 10V GATE-SOURCE VOLTAGE VGS (V) VDS = 50V TC = 25°C Pulse Test 0 0.8 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 40 0 TC = 25°C Pulse Test Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 3 2 102 7 5 td(off) tf 3 2 101 10–1 td(on) 2 3 tr 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10VS-5 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VDS = 50V 100V 12 200V 8 4 101 7 5 0 8 16 24 32 25°C 16 75°C 8 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 TC = 125°C 24 GATE CHARGE Qg (nC) 3 2 10–1 VGS = 0V Pulse Test 32 0 40 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 40 Tch = 25°C ID = 10A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D=1 100 7 5 3 2 10–1 7 5 3 2 0.5 0.2 0.1 PDM 0.05 0.02 0.01 tw T Single Pulse D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999