ON MUN5116T1 Bias resistor transistor Datasheet

MUN5111T1 Series
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−70/SOT−323 package which is designed for low power
surface mount applications.
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PNP SILICON
BIAS RESISTOR
TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
Features
•
•
•
•
•
•
Pb−Free Packages are Available
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−70/SOT−323 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel − Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
PIN 1
BASE
(INPUT)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
Max
Unit
PD
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
°C/W
Thermal Resistance, Junction-to-Ambient
RJA
618 (Note 1)
403 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead
RJL
280 (Note 1)
332 (Note 2)
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature Range
6x M
6x
Symbol
PIN 2
EMITTER
(GROUND)
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
R2
3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
R1
M
= Specific Device Code
(See Order Info Table)
= Date Code
ORDERING INFORMATION
See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
 Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 7
1
Publication Order Number:
MUN5111T1/D
MUN5111T1 Series
ORDERING INFORMATION AND RESISTOR VALUES
Package
Marking
R1 (K)
R2 (K)
Shipping†
MUN5111T1
SC−70/SOT−323
6A
10
10
3000/Tape & Reel
MUN5111T1G
SC−70/SOT−323
(Pb−Free)
6A
10
10
3000/Tape & Reel
MUN5112T1
SC−70/SOT−323
6B
22
22
3000/Tape & Reel
MUN5112T1G
SC−70/SOT−323
(Pb−Free)
6B
22
22
3000/Tape & Reel
MUN5113T1
MUN5113T3
SC−70/SOT−323
6C
47
47
3000/Tape & Reel
10,000/Tape & Reel
MUN5113T1G
SC−70/SOT−323
(Pb−Free)
6C
47
47
3000/Tape & Reel
MUN5114T1
SC−70/SOT−323
6D
10
47
3000/Tape & Reel
MUN5114T1G
SC−70/SOT−323
(Pb−Free)
6D
10
47
3000/Tape & Reel
MUN5115T1 (Note 3)
SC−70/SOT−323
6E
10
∞
3000/Tape & Reel
MUN5115T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
6E
10
∞
3000/Tape & Reel
MUN5116T1 (Note 3)
SC−70/SOT−323
6F
4.7
∞
3000/Tape & Reel
MUN5130T1 (Note 3)
SC−70/SOT−323
6G
1.0
1.0
3000/Tape & Reel
MUN5130T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
6G
1.0
1.0
3000/Tape & Reel
MUN5131T1 (Note 3)
SC−70/SOT−323
6H
2.2
2.2
3000/Tape & Reel
MUN5131T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
6H
2.2
2.2
3000/Tape & Reel
MUN5132T1 (Note 3)
SC−70/SOT−323
6J
4.7
4.7
3000/Tape & Reel
MUN5132T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
6J
4.7
4.7
3000/Tape & Reel
MUN5133T1 (Note 3)
SC−70/SOT−323
6K
4.7
47
3000/Tape & Reel
MUN5133T1G (Note 3)
SC−70/SOT−323
(Pb−Free)
6K
4.7
47
3000/Tape & Reel
MUN5134T1 (Note 3)
SC−70/SOT−323
6L
22
47
3000/Tape & Reel
MUN5135T1 (Note 3)
SC−70/SOT−323
6M
2.2
47
3000/Tape & Reel
MUN5136T1
SC−70/SOT−323
6N
100
100
3000/Tape & Reel
MUN5137T1
SC−70/SOT−323
6P
47
22
3000/Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
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2
MUN5111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k)
VOL
MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5113T1
MUN5136T1
MUN5137T1
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
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3
Vdc
Vdc
MUN5111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k)
MUN5130T1
MUN5115T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
MUN5116T1
MUN5131T1
MUN5132T1
Input Resistor
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
Resistor Ratio
MUN5111T1/MUN5112T1/MUN5113T1/
MUN5136T1
MUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1
Symbol
Min
Typ
Max
Unit
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
R1/R2
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
0
−50
RJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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4
150
MUN5111T1 Series
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1
TA=−25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
10
−25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
50
1
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
100
TA=−25°C
1
0.1
0.01
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0
10
8
9
Figure 5. Output Current versus Input Voltage
10
0.1
100
25°C
75°C
10
0.001
50
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
IC, COLLECTOR CURRENT (mA)
40
4
0
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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5
10
MUN5111T1 Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
40
20
IC, COLLECTOR CURRENT (mA)
TA=75°C
10
1
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
Figure 9. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25°C
75°C
1
0
10
8
9
Figure 10. Output Current versus Input Voltage
TA=−25°C
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
0
25°C
−25°C
100
10
50
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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6
10
MUN5111T1 Series
1
1000
IC/IB = 10
TA=−25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
−25°C
1
0.1
0.01
Figure 14. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 15. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
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7
10
MUN5111T1 Series
1
180
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
−25°C
120
100
80
60
40
20
0
80
TA=75°C
VCE = 10 V
160
2
1
4
6
Figure 17. VCE(sat) versus IC
100
3.5
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
25°C
−25°C
10
VO = 5 V
1
50
Figure 19. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 20. Output Current versus Input Voltage
+12 V
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
80 90 100
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
25°C
75°C
TA=−25°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current Source
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8
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1
1000
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
75°C
0.1
25°C
−25°C
0.01
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
30
75°C
100
25°C
10
1
35
−25°C
0
20
Figure 23. Maximum Collector Voltage versus
Collector Current
Figure 24. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
10
8
7
6
5
4
3
2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
−25°C
10
25°C
1
0.1
0.01
0
0
1
2
3
4
−25°C
75°C
1
25°C
0
5
10
6
7
8
9
10
Figure 26. Output Current versus Input Voltage
10
0.1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 25. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
9
1
0
120
40
60
80
100
IC, COLLECTOR CURRENT (mA)
15
20 25 30
35 40
IC, OUTPUT CURRENT (mA)
45
Figure 27. Input Voltage versus Output Current
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9
50
MUN5111T1 Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
75°C
25°C
−25°C
IC/IB = 10
0.01
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1
1000
75°C
TA = −25°C
100
25°C
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 28. Maximum Collector Voltage versus
Collector Current
Figure 29. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
1
VO = 5 V
0
1
2
3
4
TA = −25°C
10
VO = 0.2 V
75°C
0
2
6
7
8
9
10
Figure 31. Output Current versus Input Voltage
100
1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 30. Output Capacitance
25°C
75°C
10
0.1
0
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.2
0
100
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 32. Input Voltage versus Output Current
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10
20
MUN5111T1 Series
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = −25°C
75°C
0.1
25°C
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
1000
75°C
TA = −25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 33. Maximum Collector Voltage versus
Collector Current
Figure 34. DC Current Gain
100
1.2
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
10
25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0
6
7
8
9
10
11
Figure 36. Output Current versus Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 35. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
0
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 37. Input Voltage versus Output Current
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11
MUN5111T1 Series
PACKAGE DIMENSIONS
SC−70/SOT−323
CASE 419−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
L
3
DIM
A
B
C
D
G
H
J
K
L
N
S
B
S
1
2
D
G
0.05 (0.002)
J
N
C
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.00
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
2.00
2.40
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
K
H
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.032
0.040
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.079
0.095
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MUN5111T1/D