ON MBRD330 Switchmode power rectifier Datasheet

MBRD320, MBRD330,
MBRD340, MBRD350,
MBRD360
MBRD320, MBRD340 and MBRD360 are Preferred Devices
SWITCHMODE
Power Rectifiers
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DPAK Surface Mount Package
These state−of−the−art devices are designed for use as output
rectifiers, free wheeling, protection and steering diodes in switching
power supplies, inverters and other inductive switching circuits.
Features
•
•
•
•
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 20 − 60 VOLTS
1
Extremely Fast Switching
Extremely Low Forward Drop
Platinum Barrier with Avalanche Guardrings
Pb−Free Packages are Available
4
3
4
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
1 2
3
DPAK
CASE 369C
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes;
260°C Max. for 10 Seconds
MARKING DIAGRAM
YWW
B
3x0G
Y
WW
B3x0
x
G
= Year
= Work Week
= Device Code
= 2, 3, 4, 5, or 6
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 7
1
Publication Order Number:
MBRD320/D
MBRD320, MBRD330, MBRD340, MBRD350, MBRD360
MAXIMUM RATINGS
Rating
Symbol
MBRD
320
330
340
350
360
20
30
40
50
60
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
Average Rectified Forward Current (TC = +125°C, Rated VR)
IF(AV)
3
A
Peak Repetitive Forward Current, TC = +125°C
(Rated VR, Square Wave, 20 kHz)
IFRM
6
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
75
A
Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)
IRRM
1
A
TJ
−65 to +175
°C
Tstg
−65 to +175
°C
dv/dt
10,000
V/ms
Operating Junction Temperature Range (Note 1)
Storage Temperature Range
Voltage Rate of Change (Rated VR)
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Case
RqJC
6
°C/W
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
80
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
iF = 3 Amps, TC = +25°C
iF = 3 Amps, TC = +125°C
iF = 6 Amps, TC = +25°C
iF = 6 Amps, TC = +125°C
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = +25°C)
(Rated dc Voltage, TC = +125°C)
iR
V
0.6
0.45
0.7
0.625
mA
0.2
20
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBRD320, MBRD330, MBRD340, MBRD350, MBRD360
ORDERING INFORMATION
Package
Shipping†
DPAK
75 Units / Rail
MBRD320G
DPAK
(Pb−Free)
75 Units / Rail
MBRD320RL
DPAK
1800 Tape & Reel
DPAK
(Pb−Free)
1800 Tape & Reel
DPAK
2500 Tape & Reel
DPAK
(Pb−Free)
2500 Tape & Reel
DPAK
75 Units / Rail
MBRD330G
DPAK
(Pb−Free)
75 Units / Rail
MBRD330RL
DPAK
1800 Tape & Reel
DPAK
(Pb−Free)
1800 Tape & Reel
DPAK
2500 Tape & Reel
DPAK
(Pb−Free)
2500 Tape & Reel
DPAK
75 Units / Rail
MBRD340G
DPAK
(Pb−Free)
75 Units / Rail
MBRD340RL
DPAK
1800 Tape & Reel
DPAK
(Pb−Free)
1800 Tape & Reel
DPAK
2500 Tape & Reel
DPAK
(Pb−Free)
2500 Tape & Reel
DPAK
75 Units / Rail
MBRD350G
DPAK
(Pb−Free)
75 Units / Rail
MBRD350RL
DPAK
1800 Tape & Reel
DPAK
(Pb−Free)
1800 Tape & Reel
DPAK
2500 Tape & Reel
DPAK
(Pb−Free)
2500 Tape & Reel
DPAK
75 Units / Rail
MBRD360G
DPAK
(Pb−Free)
75 Units / Rail
MBRD360RL
DPAK
1800 Tape & Reel
DPAK
(Pb−Free)
1800 Tape & Reel
DPAK
2500 Tape & Reel
DPAK
(Pb−Free)
2500 Tape & Reel
Device
MBRD320
MBRD320RLG
MBRD320T4
MBRD320T4G
MBRD330
MBRD330RLG
MBRD330T4
MBRD330T4G
MBRD340
MBRD340RLG
MBRD340T4
MBRD340T4G
MBRD350
MBRD350RLG
MBRD350T4
MBRD350T4G
MBRD360
MBRD360RLG
MBRD360T4
MBRD360T4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
MBRD320, MBRD330, MBRD340, MBRD350, MBRD360
TYPICAL CHARACTERISTICS
I R , REVERSE CURRENT (mA)
100
10
40
20
10
TJ = 150°C
125°C
4.0
2.0
1.0
100°C
75°C
0.4
0.2
0.1
0.04
0.02
0.01
0.004
0.002
0.001
25°C
0
TJ = 25°C
75°C
1.0
0.2
0.3
0.4
0.5
0.6
0.7
70
60
Figure 2. Typical Reverse Current
125°C
0.1
0.1
40
20
30
50
VR, REVERSE VOLTAGE (VOLTS)
10
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficient below rated VR.
150°C
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
0.8
0.9
1.0
1.1
10
SINE
WAVE
9.0
TJ = 150°C
8.0
5
7.0
10
6.0
5.0
dc
IPK/IAV = 20
SQUARE
WAVE
4.0
3.0
2.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage
Figure 3. Average Power Dissipation
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4
9.0
10
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
8.0
RATED VOLTAGE APPLIED
7.0
RqJC = 6°C/W
6.0
TJ = 150°C
SINE
WAVE
OR
SQUARE
WAVE
5.0
4.0
3.0
dc
2.0
1.0
0
80
90
100
110
120
130
140
150
160
4.0
RqJA = 80°C/W
SURFACE MOUNTED ON MIN.
PAD SIZE RECOMMENDED
TJ = 150°C
3.5
3.0
dc
SQUARE WAVE
OR
SINE WAVE
VR = 25 V
2.5
TJ = 125°C
2.0
1.5
TJ = 150°C
1.0
0.5
0
0
20
40
60
80
100
120
140
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Current Derating, Case
Figure 5. Current Derating, Ambient
1K
700
500
C, CAPACITANCE (pF)
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
MBRD320, MBRD330, MBRD340, MBRD350, MBRD360
300
200
TJ = 25°C
100
70
50
30
20
10
0
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Capacitance
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5
60
70
160
MBRD320, MBRD330, MBRD340, MBRD350, MBRD360
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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