NTD4302 Power MOSFET 68 A, 30 V, N−Channel DPAK Features • • • • • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature DPAK Mounting Information Provided These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX 30 V 7.8 mW @ 10 V 68 A N−Channel D Applications • DC−DC Converters • Low Voltage Motor Control • Power Management in Portable and Battery Powered Products: G i.e., Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Unit 30 Vdc Gate−to−Source Voltage − Continuous VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Continuous Drain Current @ TC = 25°C (Note 4) Continuous Drain Current @ TC = 100°C RqJC PD ID ID 1.65 75 68 43 °C/W W A A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 3) RqJA PD ID ID IDM 67 1.87 11.3 7.1 36 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 3) RqJA PD ID ID IDM 120 1.04 8.4 5.3 28 °C/W W A A A Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 17 Apk, L = 5.0 mH, RG = 25 W) EAS 722 mJ Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds TL 260 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 1 2 3 DPAK CASE 369C (Surface Mount) STYLE 2 2 1 3 Drain Gate Source 4 Drain 4 1 DPAK CASE 369D (Straight Lead) STYLE 2 2 3 1 2 3 Gate Drain Source °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 4. Current Limited by Internal Lead Wires. YWW T 4302G Value VDSS Rating YWW T 4302G Symbol Drain−to−Source Voltage Y WW T4302 G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 8 1 Publication Order Number: NTD4302/D NTD4302 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 30 − − 25 − − − − − − 1.0 10 − − ±100 1.0 − 1.9 −3.8 3.0 − − − − 0.0078 0.0078 0.010 0.010 0.010 0.013 gFS − 20 − Mhos Ciss − 2050 2400 pF Coss − 640 800 Crss − 225 310 td(on) − 11 20 tr − 15 25 td(off) − 85 130 tf − 55 90 td(on) − 11 20 OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mA) Positive Temperature Coefficient V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 30 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Negative Temperature Coefficient VGS(th) Static Drain−Source On−State Resistance (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 10 Adc) (VGS = 4.5 Vdc, ID = 5.0 Adc) RDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) Vdc W DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time (VDD = 25 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 6.0 W) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time (VDD = 25 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 2.5 W) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge (VDD = 24 Vdc, ID = 20 Adc, VGS = 10 Vdc, RG = 2.5 W) (VDS = 24 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) tr − 13 20 td(off) − 55 90 tf − 40 75 td(on) − 15 − tr − 25 − td(off) − 40 − tf − 58 − QT − 55 80 Qgs (Q1) − 5.5 − Qgd (Q2) − 15 − − − − 0.75 0.90 0.65 1.0 − − trr − 39 65 ta − 20 − tb − 19 − Qrr − 0.043 − ns ns ns nC BODY−DRAIN DIODE RATINGS (Note 5) Diode Forward On−Voltage (IS = 2.3 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc) (IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time VSD (IS = 2.3 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 5. Indicates Pulse Test: Pulse Width = 300 msec max, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 Vdc ns mC NTD4302 TYPICAL CHARACTERISTICS RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = 3.8 V VGS = 4.4 V VGS = 4.6 V 30 VGS = 5 V 20 VGS = 7 V VGS = 3.4 V VGS = 10 V VGS = 3.2 V 10 0 VDS > = 10 V ID, DRAIN CURRENT (AMPS) 40 60 TJ = 25°C VGS = 4 V VGS = 3.0 V VGS = 2.8 V 0 1 0.5 1.5 2 2.5 50 40 30 TJ = 25°C 20 TJ = 100°C TJ = −55°C 10 0 3 2 3 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 10 A TJ = 25°C 0.075 0.05 0.015 TJ = 25°C VGS = 4.5 V 0.01 VGS = 10 V 0.005 0.025 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0 1.6 2 4 6 8 10 0 0.00E+00 1.00E+01 2.00E+01 3.00E+01 4.00E+01 5.00E+01 6.00E+01 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−To−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 ID = 18.5 A VGS = 10 V VGS = 0 V TJ = 150°C 1.4 IDSS, LEAKAGE (nA) 1000 1.2 1 0.8 0.6 −50 6 5 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.1 0 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 50 −25 0 25 50 75 100 125 100 10 1 150 TJ = 100°C 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTD4302 6000 VGS = 0 V TJ = 25°C 5000 C, CAPACITANCE (pF) Ciss 4000 3000 Crss Ciss 2000 1000 Coss Crss 0 10 VGS 0 VDS 10 VGS, GATE−TO−SOURCE− VOLTAGE (V) 12.5 VDS = 0 V 30 QT 10 20 VGS 5 15 Q2 Q1 2.5 0 10 ID = 2 A TJ = 25°C 0 10 20 30 40 50 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 25 IS, SOURCE CURRENT (AMPS) VDD = 24 V ID = 18.5 A VGS = 10 V t, TIME (ns) 25 VD 7.5 30 20 100 tf td(off) tr 10 td(on) 1 10 0 60 VGS = 0 V TJ = 25°C 20 15 10 5 0 0.5 100 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 VDS, DRAIN−TO−SOURCE− VOLTAGE (V) TYPICAL CHARACTERISTICS 1 NTD4302 TYPICAL CHARACTERISTICS ID , DRAIN CURRENT (AMPS) 100 100 ms di/dt 1 ms VGS = 10 V SINGLE PULSE TC = 25°C 10 IS trr ta tb 10 ms TIME dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.25 IS tp IS 1 0.1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 12. Diode Reverse Recovery Waveform Figure 11. Maximum Rated Forward Biased Safe Operating Area Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT DUTY CYCLE 100 D = 0.5 0.2 0.1 0.05 0.02 0.01 10 1 P(pk) t1 0.1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE RqJA(t) = r(t) RqJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJA(t) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 t, TIME (seconds) 1E+00 1E+01 1E+02 1E+03 Figure 13. Thermal Response − Various Duty Cycles ORDERING INFORMATION Package Type Package Shipping† DPAK 369C (Pb−Free) 75 Units / Rail NTD4302−1G DPAK−3 369D (Pb−Free) 75 Units / Rail NTD4302T4G DPAK 369C (Pb−Free) 2500 Tape & Reel Device NTD4302G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD4302 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NTD4302 PACKAGE DIMENSIONS DPAK CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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