ON NGTB30N65IHL2WG Igbt Datasheet

NGTB30N65IHL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
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30 A, 650 V
VCEsat = 1.6 V
Eoff = 0.2 mJ
Features
•
•
•
•
•
•
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
TJmax = 175°C
Soft, Fast Free Wheeling Diode
This is a Pb−Free Device
C
G
Typical Applications
• Inductive Heating
• Soft Switching
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
650
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
120
A
Gate−emitter voltage
VGE
$20
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
60
30
G
C
120
A
TO−247
CASE 340AL
E
A
60
30
MARKING DIAGRAM
W
30N65IHL2
AYWWG
300
150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N65IHL2WG
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB30N65IHL2W/D
NGTB30N65IHL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.50
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.46
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 175°C
VCEsat
−
−
1.6
2.0
2.2
−
V
VGE = VCE, IC = 150 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 650 V
VGE = 0 V, VCE = 650 V, TJ = 175°C
ICES
−
−
−
−
0.2
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
100
nA
Cies
−
3200
−
pF
Coes
−
130
−
Cres
−
85
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
nC
Qg
135
Qge
26
Qgc
66
TJ = 25°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
145
tf
71
Eoff
0.2
mJ
TJ = 150°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
151
ns
tf
94
Eoff
0.41
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 175°C
VF
1.1
1.0
TJ = 25°C
IF = 30 A, VR = 200 V
diF/dt = 200 A/ms
trr
430
ns
Qrr
7700
nc
Irrm
35
A
VCE = 480 V, IC = 30 A, VGE = 15 V
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.3
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NGTB30N65IHL2WG
TYPICAL CHARACTERISTICS
120
VGE = 20 V to 13 V
TJ = 25°C
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
120
11 V
80
10 V
60
40
9V
20
8V
0
100
11 V
80
60
10 V
40
9V
8V
20
7V
7V
0
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0
8
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
TJ = −55°C
VGE = 20 V to 13 V
11 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
8
120
120
100
80
10 V
60
40
9V
20
8V
0
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 25°C
100
TJ = 150°C
80
60
40
20
0
0
8
Figure 3. Output Characteristics
2
4
8
12
6
10
VGE, GATE−EMITTER VOLTAGE (V)
14
Figure 4. Typical Transfer Characteristics
10000
3.00
Cies
IC = 50 A
2.50
CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 V
to 13 V
TJ = 150°C
IC = 40 A
IC = 30 A
2.00
IC = 20 A
1.50
1000
TJ = 25°C
100
Coes
1.00
Cres
0.50
−75 −50 −25
0
25
50
75 100 125 150 175 200
10
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB30N65IHL2WG
TYPICAL CHARACTERISTICS
20
100
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
120
TJ = 25°C
80
TJ = 150°C
60
40
20
18
16
14
12
10
8
6
VCE = 400 V
VGE = 15 V
IC = 30 A
4
2
0
0
0
0.5
1.0
1.5
VF, FORWARD VOLTAGE (V)
0
2.0
20
Figure 7. Diode Forward Characteristics
60
80
100 120
QG, GATE CHARGE (nC)
160
1000
0.4
SWITCHING TIME (ns)
VCE = 400 V
VGE = 15 V
IC = 30 A
Rg = 10 W
0.5
0.3
Eoff
0.2
td(off)
100
tf
VCE = 400 V
VGE = 15 V
IC = 30 A
Rg = 10 W
0.1
0
10
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
1000
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1.4
1.2
SWITCHING TIME (ns)
1.6
SWITCHING LOSS (mJ)
140
Figure 8. Typical Gate Charge
0.6
SWITCHING LOSS (mJ)
40
Eoff
1.0
0.8
0.6
0.4
td(off)
tf
100
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
0.2
0
10
4
14
24
34
44
54
64
74
4
84
IC, COLLECTOR CURRENT (A)
14
24
34
44
54
64
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
Figure 11. Switching Loss vs. IC
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4
74
160
NGTB30N65IHL2WG
TYPICAL CHARACTERISTICS
1000
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
1.0
0.5
Eoff
VCE = 400 V
VGE = 15 V
IC = 30 A
TJ = 150°C
0
td(off)
100
tf
VCE = 400 V
VGE = 15 V
IC = 30 A
TJ = 150°C
10
5
15
25
35
45
55
65
75
5
85
15
25
35
45
55
65
RG, GATE RESISTOR (W)
RG, GATE RESISTOR (W)
Figure 13. Switching Loss vs. RG
Figure 14. Switching Time vs. RG
0.50
75
85
1000
0.40
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
0.45
0.35
0.30
Eoff
0.25
0.20
Rg = 10 W
VGE = 15 V
IC = 30 A
TJ = 150°C
0.15
0.10
0.05
0
100
tf
Rg = 10 W
VGE = 15 V
IC = 30 A
TJ = 150°C
10
175
225
275
325
375
425
475
525
175
575
225
275
325
375
425
475
525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
50 ms
100
IC, COLLECTOR CURRENT (A)
1000
IC, COLLECTOR CURRENT (A)
td(off)
100 ms
dc operation
10
1 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
10
10
VGE = 15 V, TC = 150°C
1
0.1
1
100
100
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB30N65IHL2WG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
R(t) (°C/W)
0.1
0.01
RqJC = 0.50
20%
10%
5%
Junction R1
2%
R2
Rn
C2
Cn
Case
Ci = ti/Ri
C1
0.001
Single Pulse
Ri (°C/W)
Ci (J/W)
0.064185
0.060802
0.050673
0.170671
0.142159
0.009510
0.000004
0.001558
0.005201
0.019734
0.018529
0.070344
3.325233
26863.47
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
R(t) (°C/W)
RqJC = 1.46
1
50% Duty Cycle
20%
0.1
Junction R1
10%
5%
2%
Rn
C2
Cn
Case
Ci = ti/Ri
C1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.01
0.000001
R2
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
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0.1
Ri (°C/W)
Ci (J/W)
0.026867
0.000237
0.034915
0.039625
0.087617
0.161215
0.336873
0.265205
0.361515
0.148056
0.000037
0.013344
0.000286
0.000798
0.001141
0.001962
0.002968
0.011924
0.027661
0.213586
1
NGTB30N65IHL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
B A
P
A
E2/2
Q
E2
NOTE 4
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTE 6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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