TYPICAL PERFORMANCE CURVES
®
1200V APT33GF120B2_LRDQ2(G)
APT33GF120B2RDQ2 APT33GF120LRDQ2
APT33GF120B2RDQ2G* APT33GF120LRDQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
FAST IGBT & FRED
(B2)
T-Max®
TO-264
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• RBSOA and SCSOA Rated
• Ultra Low Leakage Current
(L)
C
• Ultrafast Soft Recovery Anti-parallel Diode
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT33GF120B2_LRDQ2(G)
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
64
I C2
Continuous Collector Current @ TC = 100°C
30
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
1
UNIT
Volts
Amps
75
Switching Safe Operating Area @ TJ = 150°C
75A @ 1200V
Total Power Dissipation
Watts
357
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.5mA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
MAX
4.5
5.5
6.5
2.0
2.5
3.0
Units
1200
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
TYP
3.1
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Volts
100
2
Gate-Emitter Leakage Current (VGE = ±20V)
6000
±120
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
nA
11-2005
V(BR)CES
MIN
Rev A
Characteristic / Test Conditions
052-6280
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT33GF120B2_LRDQ2(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
3
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
Switching Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
tf
110
Gate Charge
10
VGE = 15V
170
TJ = 150°C, R G = 4.3Ω, VGE =
1315
TJ = +25°C
1515
14
VCC = 800V
17
Turn-off Delay Time
VGE = 15V
220
RG = 4.3Ω
135
1325
I C = 25A
Current Fall Time
Eoff
Turn-off Switching Energy
µJ
1930
Inductive Switching (125°C)
Current Rise Time
Turn-on Switching Energy (Diode)
ns
110
RG = 4.3Ω
Turn-on Delay Time
Turn-on Switching Energy
nC
185
6
Eon2
V
A
17
I C = 25A
Eon1
pF
75
14
5
UNIT
100
VCC = 800V
4
MAX
19
Inductive Switching (25°C)
Current Fall Time
Turn-off Switching Energy
td(off)
f = 1 MHz
15V, L = 100µH,VCE = 1200V
Turn-off Delay Time
Eoff
tr
230
VGE = 15V
Turn-on Switching Energy (Diode)
td(on)
1855
VGE = 0V, VCE = 25V
I C = 25A
Current Rise Time
Eon2
TYP
Capacitance
VCE = 600V
Turn-on Delay Time
Turn-on Switching Energy
MIN
44
55
TJ = +125°C
ns
µJ
3325
6
2145
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case (IGBT)
RθJC
Junction to Case (DIODE)
WT
Package Weight
MIN
TYP
MAX
.35
0.61
6.10
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
052-6280
Rev A
11-2005
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
TJ = 25°C
60
TJ = -55°C
50
40
TJ = 125°C
30
20
10
70
12V
60
50
11V
40
10V
30
20
9V
0
5
10
15
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
70
TJ = -55°C
60
50
40
30
TJ = 25°C
20
TJ = 125°C
10
0
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
80
8V
7V
0
0
1
2
3
4
5
6
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
13V
80
10
0
0
15V
90
J
10
VCE = 960V
8
6
4
2
0
20
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 25A
3
2
IC = 12.5A
1
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
5
2
0
0.80
0.75
0.70
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
0.85
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
25
50
75
100
125
150
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
80
0.90
IC = 12.5A
1
1.10
0.95
IC = 25A
3
90
1.00
IC = 50A
4
1.15
1.05
40 60 80 100 120 140 160 180 200
GATE CHARGE (nC)
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 50A
4
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
VCE = 240V
VCE = 600V
12
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 25A
C
T = 25°C
14
0
70
60
50
40
30
20
10
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
11-2005
IC, COLLECTOR CURRENT (A)
= 15V
Rev A
GE
052-6280
V
70
APT33GF120B2_LRDQ2(G)
100
IC, COLLECTOR CURRENT (A)
80
VGE = 15V
15
10
5
VCE = 800V
TJ = 25°C, or 125°C
RG = 4.3Ω
L = 100µH
0
70
40
30
20
VCE = 800V
RG = 4.3Ω
L = 100µH
RG = 4.3Ω, L = 100µH, VCE = 800V
100
TJ = 25°C, VGE = 15V
80
TJ = 125°C, VGE = 15V
60
40
10
20
0
0
60
50
40
30
20
10
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
4,000
= 800V
V
CE
= +15V
V
GE
R = 4.3Ω
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
50
120
tf, FALL TIME (ns)
tr, RISE TIME (ns)
TJ = 25 or 125°C,VGE = 15V
50
G
8,000
TJ = 125°C
6,000
4,000
2,000
TJ = 25°C
J
12,000
10,000
8,000
Eoff,50A
4,000
Eoff,25A
2,000
Eon2,25A
Eon2,12.5A
Eoff,12.5A
50
40
30
20
10
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
SWITCHING ENERGY LOSSES (µJ)
Eon2,50A
14,000
6,000
G
3,000
TJ = 125°C
2,500
2,000
1,500
TJ = 25°C
1,000
500
9,000
= 800V
V
CE
= +15V
V
GE
T = 125°C
16,000
3,500
60
50
40
30
20
10
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
60
50
40
30
20
10
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
18,000
= 800V
V
CE
= +15V
V
GE
R = 4.3Ω
0
0
SWITCHING ENERGY LOSSES (µJ)
100
140
10,000
11-2005
VGE =15V,TJ=25°C
160
RG = 4.3Ω, L = 100µH, VCE = 800V
60
50
40
30
20
10
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
Rev A
VGE =15V,TJ=125°C
150
60
50
40
30
20
10
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
60
052-6280
200
0
60
50
40
30
20
10
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
0
APT33GF120B2_LRDQ2(G)
250
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
20
= 800V
V
CE
= +15V
V
GE
R = 4.3Ω
8,000
G
7,000
Eon2,50A
6,000
5,000
Eoff,50A
4,000
3,000
2,000
1,000
0
Eoff,25A
Eon2,25A
Eon2,12.5A
Eoff,12.5A
125
100
75
50
25
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
3,000
IC, COLLECTOR CURRENT (A)
P
C, CAPACITANCE ( F)
1,000
500
Coes
Cres
100
APT33GF120B2_LRDQ2(G)
80
Cies
50
70
60
50
40
30
20
10
0
10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.35
D = 0.9
0.30
0.7
0.25
0.20
0.5
Note:
0.15
0.3
0.10
t1
t2
0.05
0
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.40
t
0.1
0.05
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.225
0.148
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
5
0
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 800V
CE
R = 4.3Ω
max
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
G
5
10
15 20 25 30 35 40 45 50
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
11-2005
0.0138
F
10
Rev A
0.125
Power
(watts)
50
052-6280
RC MODEL
Junction
temp. (°C)
FMAX, OPERATING FREQUENCY (kHz)
100
APT33GF120B2_LRDQ2(G)
APT40DQ120
Gate Voltage
10%
TJ = 125°C
td(on)
IC
V CC
Collector Current
tr
V CE
90%
5%
10%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
TJ = 125°C
td(off)
90%
tf
Collector Voltage
10%
0
Collector Current
Switching Energy
052-6280
Rev A
11-2005
Figure 23, Turn-off Switching Waveforms and Definitions
TYPICAL PERFORMANCE CURVES
APT33GF120B2_LRDQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT33GF120B2_LRDQ2(G)
IF(AV)
Maximum Average Forward Current (TC = 112°C, Duty Cycle = 0.5)
40
IF(RMS)
RMS Forward Current (Square wave, 50% duty)
63
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
UNIT
Amps
210
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
MIN
Forward Voltage
TYP
IF = 25A
2.46
IF = 50A
2.95
IF = 25A, TJ = 125°C
1.83
MAX
UNIT
Volts
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C
F
F
R
J
-
26
trr
Reverse Recovery Time
-
350
Qrr
Reverse Recovery Charge
-
570
-
4
-
430
ns
-
2200
nC
-
9
-
210
ns
-
3400
nC
-
29
Amps
IRRM
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 40A, diF/dt = -200A/µs
VR = 800V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 800V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 40A, diF/dt = -200A/µs
IF = 40A, diF/dt = -1000A/µs
VR = 800V, TC = 125°C
Maximum Reverse Recovery Current
ns
nC
-
-
Amps
Amps
0.60
D = 0.9
0.50
0.7
0.40
Note:
0.5
0.30
PDM
0.3
0.20
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.10
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
0.0442
0.00222
0.242
0.00586
Rev A
Power
(watts)
11-2005
Junction
temp (°C)
0.324
0.0596
052-6280
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.70
Case temperature (°C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
600
100
80
TJ = 175°C
60
40
TJ = 25°C
TJ = 125°C
20
trr, REVERSE RECOVERY TIME
(ns)
IF, FORWARD CURRENT
(A)
120
APT33GF120B2_LRDQ2(G)
T = 125°C
J
V = 800V
R
500
80A
400
40A
20A
300
200
100
TJ = -55°C
0
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
5000
T = 125°C
J
V = 800V
4500
R
4000
80A
3500
3000
40A
2500
2000
20A
1500
1000
500
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
IRRM
Qrr
CJ, JUNCTION CAPACITANCE
(pF)
40A
15
10
20A
5
Duty cycle = 0.5
T = 175°C
J
70
50
40
20
10
0
200
11-2005
20
30
0.4
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
Rev A
25
60
0.2
052-6280
80A
R
30
80
trr
0.6
150
100
50
0
T = 125°C
J
V = 800V
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
trr
0.8
35
0
Qrr
1.0
0.0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
1.2
0
IRRM, REVERSE RECOVERY CURRENT
(A)
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature
TYPICAL PERFORMANCE CURVES
APT33GF120B2_LRDQ2(G)
Vr
diF /dt Adjust
+18V
APT10035BLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
3
0.25 IRRM
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 33, Diode Reverse Recovery Waveform and Definitions
T-MAX® (B2) Package Outline
TO-264 (L) Package Outline
e1 SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
4.50
(.177) Max.
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
25.48 (1.003)
26.49 (1.043)
Gate
Collector
(Cathode)
Emitter
(Anode)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Collector
(Cathode)
Emitter
(Anode)
11-2005
0.40 (.016)
0.79 (.031)
5.79 (.228)
6.20 (.244)
Rev A
20.80 (.819)
21.46 (.845)
Collector
(Cathode)
Collector
(Cathode)
5.38 (.212)
6.20 (.244)
052-6280
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)