NJSEMI IRF830 N-channel power mosfets, 4.5 a, 450 v/500 v Datasheet

, line.
J.S.IILS.U
Cx
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRF430-433/IRF830-833
MTM/MTP4N45/4N50
N-Channel Power MOSFETs,
4.5 A, 450 V/500 V
Description
TO-220AB
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high voltage, high spaed
applications, such as off-line switching power supplies,
UPS, AC and DC motor controls, relay and solenoid
drivers.
• VGS Rated at ± 20 V
• Silicon Gate for Fast Switching Speeds
• IDSS. VDs(on), SOA and VQS(ih) Specified at Elevated
Temperature
• Rugged
IRF430
IRF431
IRF432
IRF433
MTM4N45
MTM4N50
Maximum Ratings
IRF830
IRF831
IRF832
IRF833
MTP4N4S
MTP4N50
Rating
IRF430/432
IRF830/B32
MTM/MTP4N50
Rating
IRF431/433
IRF831/833
MTM/MTP4N4S
Unit
VDss
Drain to Source Voltage
500
450
V
VDGR
Drain to Gate Voltage
RQS = 20 kfl
500
450
V
Symbol
Characteristic
VGS
Gate to Source Voltage
±20
±20
V
Tj, Tslfl
Operating Junction and
Storage Temperature
-55 to +150
-55 to +150
•c
TL
Maximum Lead Temperature
for Soldering Purposes,
1/8' From Case for 5 s
275
275
•c
Maximum On-State Characteristics
RDS(on)
Static Drain-to-Source
On Resistance
ID
Drain Current
Continuous
Pulsed
IRF430/431
IRF830/831
IRF432/433
IRF832/833
MTM/MTP4N45
MTM/MTP4N45
1.5
2.0
1.5
4.5
18
4.0
16
4.0
10
n
A
Maximum Thermal Characteristics
RSJC
Thermal Resistance,
Junction to Case
1.67
1.67
1.67
"C/W
RSJA
Thermal Resistance,
Junction to Ambient
60
60
60
°c/w
PD
Total Power Dissipation
at Tc - 25°C
75
75
75
w
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press, However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF430-433/IRF830-833
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Win
Max
Unit
Test Conditions
Off Characteristics
V(BR)DSS
bss
Drain Source Breakdown Voltage1
V
IRF430/432/830/832
500
IRR31/433/831/833
450
Zero Gate Voltage Drain Current
250
1000
less
Gate-Body Leakage Current
IRF430-433
±100
IRF830-833
±500
VGS - 0 V, b = 250 /uA
UA
Vps = Rated VDSs, VGS = 0 V
M
VDS = 0.8 x Rated VDSS,
V Q S - O V, T C =125°C
nA
VGS - ±20 V. VDS = 0 V
On Characteristics
Vosph)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistanoe2
ais
2.0
4.0
IRF430/431/830/831
1.5
IRF432/433/832/833
2.0
2.S
Forward Transconductance
V
b = 250 |uA, VDS = VGS
n
VQS =10 V, ID = 2.5 A
S ftj)
VDS = 10 V, ID = 2.5 A
PF
VDS = 25 V, VQS - 0 V
f - 1.0 MHz
Dynamic Characteristics
ciss
Input Capacitance
800
GOSS
Output Capacitance
200
pF
GISS
Reverse Transfer Capacitance
60
PF
Switching Characteristics (TC = 25'1C, Figures 12. 13)
td(on)
Turn-On Delay Time
30
ns
tr
Rise Time
30
ns
td(oH)
Turn-Off Delay Time
55
ns
t|
Fall Time
30
ns
°g
Total Gate Charge
30
nC
Symbol
VQD = 225 V, ID - 2.5 A
VGS= 10 V, RGEN = 15 H
RGs = 15 fl
VGS- 10 V, ID = 7.0 A
VDS = 180 v
Characteristic
Typ
Max
Unit
Test Conditions
Source-Drain Diode Characteristics
VSD
t,,
Diode Forward Voltage
IRF430/431/830/831
1.4
V
ls = 4.5 A; VGS - 0 V
IRF432/433/832/833
1,3
V
ls = 4.0 A; VGS - 0 V
ns
ls = 4.5 A; dls/dt=- 100 A/jjS
Reverse Recovery Time
Notes
1- Tj=+a5°C to +1EO-C
2. Pulso last Pulse width < 60 (is. Duty cycle < 1 %
600
MTM/MTP4N45/4N50
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Mln
Max
Unit
Test Conditions
Off Characteristics
V(BR)DSS
loss
IGSS
Drain Source Breakdown Voltage1
V
MTM/MTP4N50
500
MTM/MTP4N45
450
0.25
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS - 0 V, b - 5-0
mA
mA
Vos = 0.85 x Rated VDSS,
VGS - 0 V
2.5
mA
VDs - 0.85 x Rated VQSS.
V Q S ^ O V. TC=100°C
±500
nA
VGS = ± 20 V, VDS = 0 V
ID "1.0 mA, VDS = VGS
ID =1.0 mA, VDS = VGS,
On Characteristics
Vas(ih)
Gate Threshold Voltage
2.0
4.5
V
1.5
4.0
V
TC = 100°C
RDS(on)
Static Drain-Source On-Resistance2
1.5
n
Ves = 10 V, I0 = 2.0 A
VDS(on)
Drain-Source On-Voltage2
3.0
V
VQS -10 V, ID = 2,0 V
7,0
V
VQs-10 V, ID = 4.0 A
6.0
V
VGS =10 V, ID -4.0 A
T C -100«C
S (U)
VDS =10 V, ID = 2.0 A
pF
VDS = 25 V, VGS = 0 V
f=1.0 MHz
9ls
Forward Transconductance
2.0
Dynamic Characteristics
Q83
Input Capacitance
coss
Output Capacitance
Qss
Reverse Transfer Capacitance
1200
300
PF
80
PF
Switching Characteristics (Tc = 25°C, Figures 12, 13)3
tdton)
Turn-On Delay Time
50
ns
t,
Rise Time
100
ns
td(oll)
Turn-Off Delay Time
200
ns
tf
Fall Time
100
ns
60
nC
Q9
Total Gate Charge
Motes
1. Tj-+25'C to +150-C
2. Pulse lest Pulse width < SO ps, Duly cycle <1%
3. Switching time measurements performed on LEM TR-58 test equipment.
VDD = 25 V, ID = 2.0 A
VGS =10 V, RGEN-SO «
RGS = 50 S7
VGS -10 V, ID = 7.0 A
VDD =180 V
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