Rohm MMSTA06 Npn general purpose transistor Datasheet

SSTA06 / MMSTA06
Transistors
NPN General Purpose Transistor
SSTA06 / MMSTA06
zDimensions (Unit : mm)
zFeatures
1) BVCEO < 80V ( IC=1mA)
2) Complements the SSTA56 / MMSTA56.
SSTA06
zPackage, marking and packaging specifications
Part No.
SSTA06
MMSTA06
Packaging type
SST3
R1G
T116
SMT3
R1G
T146
3000
3000
Mark
Code
Basic ordering unit (pieces)
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
MMSTA06
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
VCEO
80
80
4
0.5
V
V
V
A
0.2
W
VEBO
IC
PC
Tj
Tstg
W∗
°C
°C
0.35
150
−55 to +150
∗ Mounted on 7 x 5 x 0.6mm ceramic substrate.
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Parameter
BVCBO
BVCEO
80
80
−
−
−
−
V
V
IC=100µA
IC=1mA
Emitter-base breakdown voltage
BVEBO
ICBO
4
−
−
−
−
−
−
0.1
1
V
IE=100µA
VCB=80V
−
−
0.25
V
IC/IB=100mA/10mA
VCE/IB=1V/100mA
VCE=1V, IC=10mA
Collector cutoff current
Collector-emitter saturation voltage
ICEO
VCE(sat)
Base-emitter saturation voltage
µA
VBE(ON)
−
−
1.2
V
DC current transfer ratio
hFE
100
100
−
−
−
−
Transition frequency
fT
100
−
MHz
−
−
Conditions
VCE=60V
VCE=1V, IC=100mA
VCE=2V, IE= −10mA, f=100MHz
Rev.B
1/3
SSTA06 / MMSTA06
Transistors
COLLECTOR CURRENT : IC (mA)
100
Ta=25˚C 500µA
450µA
400µA
80
350µA
300µA
60
250µA
200µA
40
150µA
100µA
20
50µA
IB=0µA
0
0
5.0
1.0
2.0
3.0
4.0
COLLECTOR-EMITTER VOLTAGE : VCE (V)
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristics curves
Ta=25˚C
IC / IB=10
0.3
0.2
Ta=125˚C
0.1
25˚C
0
−40˚C
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Fig.1 Grounded emitter output
characteristics
1000
DC CURRENT GAIN : hFE
Ta=25˚C
5V
VCE=10V
100
3V
1V
10
0.1
1.0
10
100
COLLECTOR CURRENT : IC (mA)
1000
1000
Ta=25˚C
VCE=5V
DC CURRENT GAIN : hFE
Ta=125˚C
25˚C
−40˚C
100
10
0.1
1.0
10
COLLECTOR CURRENT IC : (mA)
100
Fig.4 DC current gain vs. collector current ( II )
1000
ASE EMITTER SATURATION VOLTAGEV : BE(sat) (V)
Fig.3 DC current gain vs. collector current ( I )
1.8
Ta=25˚C
IC / IB=10
1.6
1.4
1.2
1.0
Ta=−40˚C
0.8
25˚C
0.6
125˚C
0.4
0.2
0
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation
voltage vs. collector current
Rev.B
2/3
SSTA06 / MMSTA06
Transistors
Cib
Ta=25˚C
f=1MHz
1.4
1.2
1.0
Ta=−40˚C
0.8
25˚C
0.6
125˚C
Cob
10
0.2
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.6 Grounded emitter propagation
characteristics
0.5
1
2
5
10
20
REVERSE BIAS VOLTAGE (V)
Ta=25˚C
VCE=5V
100
0.4
0
CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)
Ta=25˚C
VCE=5V
1.6
CAPACITANCE (pF)
BASE EMITTER VOLTAGE : VBE(ON) (V)
1000
100
1.8
50
Fig.7 Input / output capacitance
vs. voltage
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.8 Gain bandwidth product
vs. collector current
Rev.B
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
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Appendix1-Rev2.0
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