CHENMKO ENTERPRISE CO.,LTD CHT589PT SURFACE MOUNT PNP Silicon Transistor VOLTAGE 30 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * High saturation current capability. .019 (0.50) .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * High current (Max.=200mA). * Suitable for high packing density. .066 (1.70) .110 (2.80) .082 (2.10) .119 (3.04) (1) * Voltage controlled small signal switch. .018 (0.30) FEATURE (3) (2) CONSTRUCTION 589 C CIRCUIT .103 (2.64) .086 (2.20) .045 (1.15) .033 (0.85) (3) .002 (0.05) MARKINTG .028 (0.70) .020 (0.50) .007 (0.177) .055 (1.40) .047 (1.20) * PNP Silicon Transistor (1) B E (2) SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − − V − V -1 A − -2 − -200 A mA VCBO collector-base voltage open emitter -50 VCEO collector-emitter voltage open base -30 VEBO emitter-base voltage open collector IC collector current (DC) -5 − ICM peak collector current IBM peak base current Ptot total power dissipation − 500 Tstg storage temperature −55 +150 Tj junction temperature °C operating ambient temperature − − 55 +150 Tamb +150 °C Tamb ≤ 25 °C; note 1 V mW °C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHT589PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 357 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = -30 V − -100 nA IEBO emitter cut-off current IC = 0; VEB = - 4 V − -100 nA hFE DC current gain IC = -1 mA; VCE = -2V IC = -500mA; VCE = -2V 100 − 300 IC = -1A; VCE = - 2V I C = -2A; VCE = -2V VCEsat collector-emitter saturation voltage 100 80 40 − − Ic = -0.5A; IB=-50mA − -0.25 V Ic = -1A; IB=-100mA − -0.35 V IC = -2A; IB = -200 m A − -0.65 V VBEsat base-emitter saturation voltage IC = -1A; IB = -100 mA − -1.2 V VBEon base-emitter turn-on voltage IC = -1A; VCE = -2V − -1.1 V Cobo output capacitance VCB = -10V; f = 1 MHz − 15 pF fT transition frequency IC = -100 mA; VCE = - 5 V; f = 100 MHz − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 100