ON MJD44H11T5G Complementary power transistor Datasheet

MJD44H11(NPN),
MJD45H11(PNP)
Complementary Power
Transistors
DPAK for Surface Mount Applications
www.onsemi.com
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS, 20 WATTS
Features
• Lead Formed for Surface Mount Application in Plastic Sleeves
•
•
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COMPLEMENTARY
COLLECTOR
2, 4
1
BASE
COLLECTOR
2, 4
1
BASE
3
EMITTER
3
EMITTER
4
4
4
MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus
sign, “−”, for PNP omitted, unless otherwise noted)
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
1 2
1
Symbol
Max
Unit
3
VCEO
80
Vdc
VEB
5
Vdc
DPAK
CASE 369C
STYLE 1
IC
8
Adc
Collector Current − Peak
ICM
16
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
1.75
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
1
2
2 3
DPAK
CASE 369G
STYLE 1
3
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
AYWW
J4
xH11G
AYWW
J4
xH11G
DPAK
A
Y
WW
J4xH11
G
IPAK
=
=
=
=
Assembly Location
Year
Work Week
Device Code
x = 4 or 5
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 20
1
Publication Order Number:
MJD44H11/D
MJD44H11 (NPN), MJD45H11 (PNP)
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
71.4
°C/W
TL
260
°C
Unit
Lead Temperature for Soldering
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
80
−
−
−
−
1.0
−
−
1.0
−
−
1
−
−
1.5
60
40
−
−
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
Emitter Cutoff Current
(VEB = 5 Vdc)
IEBO
Vdc
mA
mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
VBE(sat)
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
(VCE = 1 Vdc, IC = 4 Adc)
Vdc
Vdc
hFE
−
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 Mhz)
MJD44H11
MJD45H11
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 Mhz)
MJD44H11
MJD45H11
Ccb
pF
−
−
45
130
−
−
fT
MHz
−
−
85
90
−
−
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
MJD44H11
MJD45H11
td + tr
ns
−
−
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
ts
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
tf
300
135
−
−
ns
−
−
500
500
−
−
ns
−
−
140
100
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJD44H11 (NPN), MJD45H11 (PNP)
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.1
0.1
0.07
0.05
0.05
0.02
0.01
0.03
0.02
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 1. Thermal Response
IC, COLLECTOR CURRENT (AMP)
20
10
500ms
5
3
2
dc
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100ms
1ms
5ms
1
THERMAL LIMIT @ TC = 25°C
WIRE BOND LIMIT
0.5
0.3
0.1
0.05
1
50
3
5
7 10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Maximum Forward Bias
Safe Operating Area
TA TC
2.5 25
PD, POWER DISSIPATION (WATTS)
0.02
2 20
TC
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 3. Power Derating
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3
125
150
MJD44H11 (NPN), MJD45H11 (PNP)
1000
1000
VCE = 1 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 1 V
150°C
25°C
100
−55°C
10
150°C
25°C
−55°C
100
10
0.01
0.1
1
10
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. MJD44H11 DC Current Gain
Figure 5. MJD45H11 DC Current Gain
1000
1000
VCE = 4 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 4 V
150°C
25°C
100
−55°C
10
150°C
25°C
−55°C
100
10
0.01
0.1
1
10
0.01
10
Figure 6. MJD44H11 DC Current Gain
Figure 7. MJD45H11 DC Current Gain
IC/IB = 20
150°C
0.6
0.5
0.4
25°C
0.3
0.2
−55°C
0.1
0
0.01
1
IC, COLLECTOR CURRENT (A)
0.8
0.7
0.1
IC, COLLECTOR CURRENT (A)
VCE(sat), COLL−EMIT SATURATION VOLTAGE (V)
VCE(sat), COLL−EMIT SATURATION VOLTAGE (V)
10
IC, COLLECTOR CURRENT (A)
0.1
1
10
0.8
IC/IB = 20
0.7
−55°C
0.6
0.5
0.4
25°C
0.3
150°C
0.2
0.1
0
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 8. MJD44H11 Saturation Voltage
VCE(sat)
Figure 9. MJD45H11 Saturation Voltage
VCE(sat)
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4
10
MJD44H11 (NPN), MJD45H11 (PNP)
1.4
VBE(sat), BASE−EMIT SATURATION
VOLTAGE (V)
VBE(sat), BASE−EMIT SATURATION
VOLTAGE (V)
1.4
1.2
1.0
0.8
−55°C
25°C
0.6
0.4
150°C
IC/IB = 20
0.2
0.01
0.1
1
−55°C
0.8
25°C
0.6
150°C
0.4
IC/IB = 20
0.2
0.01
10
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. MJD44H11 Saturation Voltage
VBE(sat)
Figure 11. MJD45H11 Saturation Voltage
VBE(sat)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1.0
0
0
2.0
1.8
TA = 25°C
1.6
1.4
1.2
1.0
0.8
0.6
IC = 8 A
0.4
1A
0.2 IC = 0.1 A 0.5 A
0
0.1
1
10
IC = 3 A
100
1000
10,000
2.0
1.8
TA = 25°C
1.6
1.4
1.2
1.0
0.8
IC = 8 A
0.6
IC = 3 A
0.4
0.2 I = 0.1 A 0.5 A
C
0
0.1
1
1A
10
100
1000
10,000
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 12. MJD44H11 Collector Saturation
Region
Figure 13. MJD45H11 Collector Saturation
Region
1000
C, CAPACITANCE (pF)
1000
C, CAPACITANCE (pF)
1.2
Cob
100
10
Cob
100
10
0.1
1
10
100
0.1
1
10
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 14. MJD44H11 Capacitance
Figure 15. MJD45H11 Capacitance
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5
100
MJD44H11 (NPN), MJD45H11 (PNP)
100
fTau, CURRENT−GAIN−BANDWIDTH
PRODUCT
fTau, CURRENT−GAIN−BANDWIDTH
PRODUCT
100
VCE = 2 V
10
0.01
VCE = 2 V
10
0.1
1
0.01
10
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 16. MJD44H11
Current−Gain−Bandwidth Product
Figure 17. MJD45H11
Current−Gain−Bandwidth Product
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6
10
MJD44H11 (NPN), MJD45H11 (PNP)
ORDERING INFORMATION
Package Type
Package
Shipping†
MJD44H11G
DPAK
(Pb−Free)
369C
75 Units / Rail
NJVMJD44H11G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD44H11−1G
DPAK−3
(Pb−Free)
369D
75 Units / Rail
MJD44H11RLG
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
NJVMJD44H11RLG*
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
MJD44H11T4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD44H11T4G*
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
MJD44H11T5G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
MJD45H11G
DPAK
(Pb−Free)
369C
75 Units / Rail
NJVMJD45H11G*
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD45H11−1G
DPAK−3
(Pb−Free)
369D
75 Units / Rail
MJD45H11RLG
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
NJVMJD45H11RLG*
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
MJD45H11T4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD45H11T4G*
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD44H11D3T4G*
DPAK
(Pb−Free)
369G
2,500 / Tape & Reel
NJVMJD45H11D3T4G*
DPAK
(Pb−Free)
369G
2,500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
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7
MJD44H11 (NPN), MJD45H11 (PNP)
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
A
E
C
A
b3
B
c2
4
L3
Z
D
1
2
H
DETAIL A
3
L4
NOTE 7
c
SIDE VIEW
b2
e
b
TOP VIEW
0.005 (0.13)
M
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MJD44H11 (NPN), MJD45H11 (PNP)
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
M
DPAK−3, SURFACE MOUNT
CASE 369G
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
1
2
3
U
K
F
J
L
G
H
D
2 PL
DIM
A
B
C
D
E
F
G
H
J
K
L
R
U
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
0.13 (0.005) T
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MJD44H11/D