ON MC74VHC1GT04 Inverting buffer / cmos logic level shifter cmos logic level shifter Datasheet

MC74VHC1GT04
Inverting Buffer /
CMOS Logic Level Shifter
LSTTL−Compatible Inputs
Features
•
•
•
•
•
•
•
•
•
High Speed: tPD = 3.8 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
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MARKING
DIAGRAMS
5
SC−88A
DF SUFFIX
CASE 419A
5
1
VK M G
G
M
The MC74VHC1GT04 is a single gate inverting buffer fabricated
with silicon gate CMOS technology. It achieves high speed operation
similar to equivalent Bipolar Schottky TTL while maintaining CMOS
low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The device input is compatible with TTL−type input thresholds and
the output has a full 5 V CMOS level output swing. The input protection
circuitry on this device allows overvoltage tolerance on the input,
allowing the device to be used as a logic−level translator from 3 V
CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V
CMOS Logic while operating at the high−voltage power supply.
The MC74VHC1GT04 input structure provides protection when
voltages up to 7.0 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GT04 to be used to interface 5 V circuits to
3 V circuits. The output structures also provide protection
when VCC = 0 V. These input and output structures help prevent
device destruction caused by supply voltage − input/output voltage
mismatch, battery backup, hot insertion, etc.
1
5
TSOP−5
DT SUFFIX
CASE 483
5
1
VK M G
G
1
VK = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2 V
CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @ Load
PIN ASSIGNMENT
Power Down Protection Provided on Inputs and Outputs
1
Balanced Propagation Delays
2
IN A
Pin and Function Compatible with Other Standard Logic Families
3
GND
Chip Complexity: FETs = 105; Equivalent Gates = 26
Pb−Free Packages are Available
4
OUT Y
5
VCC
NC
FUNCTION TABLE
NC
1
IN A
2
GND
3
5
4
VCC
A Input
Y Output
L
H
H
L
OUT Y
Figure 1. Pinout (Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
IN A
1
OUT Y
Figure 2. Logic Symbol
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 14
1
Publication Order Number:
MC74VHC1GT04/D
MC74VHC1GT04
MAXIMUM RATINGS
Symbol
Value
Unit
VCC
DC Supply Voltage
Characteristics
−0.5 to +7.0
V
VIN
DC Input Voltage
−0.5 to +7.0
V
−0.5 to 7.0
−0.5 to VCC + 0.5
V
−20
mA
+20
mA
VOUT
DC Output Voltage
VCC = 0
High or Low State
IIK
Input Diode Current
IOK
Output Diode Current
IOUT
DC Output Current, per Pin
+25
mA
ICC
DC Supply Current, VCC and GND
+50
mA
VOUT < GND; VOUT > VCC
PD
Power dissipation in still air
qJA
Thermal resistance
TL
Lead temperature, 1 mm from case for 10 s
TJ
Junction temperature under bias
Tstg
Storage temperature
VESD
ESD Withstand Voltage
ILatchup
Latchup Performance
SC−88A, TSOP−5
200
mW
SC−88A, TSOP−5
333
_C/W
260
°C
+150
°C
−65 to +150
°C
> 2000
> 400
N/A
V
±500
mA
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
Above VCC and Below GND at 125°C (Note 4)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
3.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
0.0
0.0
5.5
VCC
V
−55
+125
°C
0
0
100
20
ns/V
VOUT
DC Output Voltage
TA
VCC = 0
High or Low State
Operating Temperature Range
tr , tf
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Input Rise and Fall Time
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80° C
117.8
TJ = 90 ° C
1,032,200
TJ = 100° C
80
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 110° C
Time, Years
TJ = 120° C
Time, Hours
TJ = 130° C
Junction
Temperature °C
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
1
1
10
TIME, YEARS
100
1000
Figure 3. Failure Rate vs. Time Junction Temperature
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2
MC74VHC1GT04
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
1.4
2.0
2.0
VIH
Minimum High−Level
Input Voltage
3.0
4.5
5.5
VIL
Maximum Low−Level
Input Voltage
3.0
4.5
5.5
VOH
Minimum High−Level
Output Voltage
VIN = VIH or VIL
VOL
Maximum Low−Level
Output Voltage
VIN = VIH or VIL
TA ≤ 85°C
TA = 25°C
VCC
(V)
Typ
Max
Min
1.4
2.0
2.0
0.53
0.8
0.8
VIN = VIH or VIL
IOH = −50 mA
3.0
4.5
2.9
4.4
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
3.0
4.5
2.58
3.94
VIN = VIH or VIL
IOL = 50 mA
3.0
4.5
VIN = VIH or VIL
IOL = 4.0 mA
IOL = 8.0 mA
Max
3.0
4.5
−55 ≤ TA ≤ 125°C
Min
Max
1.4
2.0
2.0
0.53
0.8
0.8
V
0.53
0.8
0.8
2.9
4.4
2.9
4.4
2.48
3.80
2.34
3.66
Unit
V
V
V
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
V
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
1.0
20
40
mA
ICCT
Quiescent Supply
Current
Input: VIN = 3.4 V
5.5
1.35
1.50
1.65
mA
IOPD
Output Leakage
Current
VOUT = 5.5 V
0.0
0.5
5.0
10
mA
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AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
TA ≤ 85°C
TA = 25°C
Symbol
tPLH,
tPHL
CIN
Parameter
Maximum Propagation
Delay, Input A to Y
Min
Typ
Max
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
5.0
6.2
10.0
13.5
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
3.8
4.2
5.0
Test Conditions
Maximum Input
Capacitance
Min
Max
−55 ≤ TA ≤ 125°C
Min
Max
Unit
11.0
15.0
13.0
17.5
ns
6.7
7.7
7.5
8.5
8.5
9.5
10
10
10
pF
Typical @ 25°C, VCC = 5.0 V
CPD
10
Power Dissipation Capacitance (Note 5)
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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3
MC74VHC1GT04
3.0 V
A
50%
GND
tPLH
tPHL
VOH
Y
50% VCC
VOL
Figure 4. Switching Waveforms
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
Figure 5. Test Circuit
ORDERING INFORMATION
Device
Package Type
MC74VHC1GT04DFT1
SC−88A
M74VHC1GT04DFT1G
SC−88A
(Pb−Free)
MC74VHC1GT04DFT2
SC−88A
M74VHC1GT04DFT2G
SC−88A
(Pb−Free)
MC74VHC1GT04DTT1
TSOP−5
M74VHC1GT04DTT1G
TSOP−5
(Pb−Free)
Package†
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MC74VHC1GT04
PACKAGE DIMENSIONS
SC−88A / SOT−353 / SC−70
CASE 419A−02
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
A
G
5
4
−B−
S
1
2
DIM
A
B
C
D
G
H
J
K
N
S
3
D 5 PL
0.2 (0.008)
M
B
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
mm Ǔ
ǒinches
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
MC74VHC1GT04
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE F
NOTE 5
2X
0.10 T
2X
0.20 T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5. OPTIONAL CONSTRUCTION: AN
ADDITIONAL TRIMMED LEAD IS ALLOWED
IN THIS LOCATION. TRIMMED LEAD NOT TO
EXTEND MORE THAN 0.2 FROM BODY.
D 5X
0.20 C A B
5
1
4
2
3
M
B
S
K
L
DETAIL Z
G
A
DIM
A
B
C
D
G
H
J
K
L
M
S
DETAIL Z
J
C
0.05
SEATING
PLANE
H
T
MILLIMETERS
MIN
MAX
3.00 BSC
1.50 BSC
0.90
1.10
0.25
0.50
0.95 BSC
0.01
0.10
0.10
0.26
0.20
0.60
1.25
1.55
0_
10 _
2.50
3.00
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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