ALD ALD1101APAL Dual n-channel matched mosfet pair Datasheet

ADVANCED
LINEAR
DEVICES, INC.
ALD1101A/ALD1101B
ALD1101
DUAL N-CHANNEL MATCHED MOSFET PAIR
GENERAL DESCRIPTION
APPLICATIONS
The ALD1101 is a monolithic dual N-channel matched transistor pair
intended for a broad range of analog applications. These enhancementmode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process.
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The ALD1101 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment. When
used with an ALD1102, a dual CMOS analog switch can be constructed.
In addition, the ALD1101 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1101 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.
Precision current mirrors
Precision current sources
Analog switches
Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
PIN CONFIGURATION
SOURCE 1
1
8
SUBSTRATE
GATE 1
2
7
SOURCE 2
DRAIN 1
3
6
GATE 2
NC
4
5
DRAIN 2
TOP VIEW
SAL, PAL, DA PACKAGES
FEATURES
• Low threshold voltage of 0.7V
• Low input capacitance
• Low Vos grades -- 2mV, 5mV, 10mV
• High input impedance -- 1012Ω typical
• Negative current (IDS) temperature coefficient
• Enhancement-mode (normally off)
• DC current gain 109
• RoHS compliant
* NC pin is internally connected. Do not connect externally.
BLOCK DIAGRAM
GATE 1 (2)
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
0°C to +70°C
Operating Temperature Range
0°C to +70°C
-55°C to +125°C
SOURCE 1 (1)
DRAIN 1 (3)
SUBSTRATE (8)
8-Pin
Small Outline
Package (SOIC)
8-Pin
Plastic Dip
Package
ALD1101ASAL
ALD1101BSAL
ALD1101SAL
ALD1101APAL
ALD1101BPAL
ALD1101PAL
8-Pin
CERDIP
Package
SOURCE 2 (7)
DRAIN 2 (5)
GATE 2 (6)
ALD1101DA
* Contact factory for leaded (non-RoHS) or high temperature versions.
Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range
SAL, PALpackages
DA package
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
10.6V
10.6V
500mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter
Symbol
ALD 1101A
Min Typ
Max
Gate Threshold
Voltage
VT
0.4
Offset Voltage
VGS1 - VGS2
VOS
IDS (ON)
Transconductance Gfs
1.0
0.4
0.7
2
Gate Threshold
TCVT
Temperature Drift
On Drain Current
0.7
ALD1101B
Min Typ Max
1.0
ALD1101
Min Typ Max
Unit
0.4
1.0
V
IDS = 10µA VGS = VDS
10
mV
IDS = 100µA VGS = VDS
0.7
5
-1.2
-1.2
-1.2
Test
Conditions
mV/°C
25
40
25
40
25
40
mA
VGS = VDS = 5V
5
10
5
10
5
10
mmho
VDS = 5V IDS= 10mA
Mismatch
∆Gfs
0.5
0.5
0.5
%
Output
Conductance
GOS
200
200
200
µmho
VDS = 5V IDS = 10mA
Drain Source
ON Resistance
RDS(ON)
50
Ω
VDS = 0.1V VGS = 5V
Drain Source
ON Resistance
Mismatch
∆RDS(ON)
0.5
%
VDS = 0.1V VGS = 5V
Drain Source
Breakdown
Voltage
BVDSS
V
IDS = 10µA VGS =0V
Off Drain Current
IDS(OFF)
Gate Leakage
Current
Input
Capacitance
75
50
75
50
0.5
12
75
0.5
12
12
0.1
4
4
0.1
4
4
0.1
4
4
nA
µA
VDS =12V VGS = 0V
TA = 125°C
IGSS
1
50
10
1
50
10
1
50
10
pA
nA
VDS =0V VGS =12V
TA = 125°C
CISS
6
10
6
10
6
10
pF
ALD1101A/ALD1101B/ALD1101
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TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
VGS = 12V
VBS = 0V
TA = 25°C
10V
120
8V
80
6V
40
4V
VBS = 0V
TA = 25°C
DRAIN-SOURCE CURRENT
(mA)
DRAIN -SOURCE CURRENT
(mA)
8
160
2V
2
4
6
8
10
6V
4
4V
2V
0
-4
0
0
-8
-160
12
-80
FORWARD TRANSCONDUCTANCE
vs. DRAIN-SOURCE VOLTAGE
80
160
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
20
VBS = 0V
f = 1KHz
5 x104
IDS = 10mA
2 x104
TA = +25°C
TA = +125°C
1 x104
5 x103
2 x103
VGS = VDS
TA = 25°C
15
VBS = 0V
-4V
-2V
-6V
10
-8V
-10V
5
-12V
IDS = 1mA
1 x103
0
0
2
4
6
8
10
12
0
0.8
DRAIN -SOURCE VOLTAGE (V)
OFF - DRAIN SOURCE CURRENT
(A)
10000
VDS = 0.2V
VBS = 0V
1000
TA = +125°C
100
TA = +25°C
10
0
2
4
6
8
10
10X10-6
2.4
3.2
4.0
OFF DRAIN - CURRENT vs.
TEMPERATURE
VDS = +12V
VGS = VBS = 0V
10X10-9
10X10-12
12
GATE SOURCE VOLTAGE (V)
ALD1101A/ALD1101B/ALD1101
1.6
GATE - SOURCE VOLTAGE (V)
RDS (ON) vs. GATE - SOURCE VOLTAGE
DRAIN - SOURCE ON RESISTANCE
(Ω)
0
DRAIN -SOURCE VOLTAGE (mV)
DRAIN-SOURCE CURRENT
(µA)
FORWARD TRANSCONDUCTANCE
(µmho)
DRAIN-SOURCE VOLTAGE (V)
1 x105
VGS = 12V
-50
-25
0
+25
+50
+75
+100 +125
TEMPERATURE (°C)
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SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A
A1
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD1101A/ALD1101B/ALD1101
C
ø
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PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
E
E1
D
S
A2
A1
e
b
A
L
Dim
Min
Max
Min
Max
A
3.81
5.08
0.105
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-8
9.40
11.68
0.370
0.460
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-8
1.02
2.03
0.040
0.080
0°
15°
0°
15°
ø
b1
Inches
c
e1
ø
ALD1101A/ALD1101B/ALD1101
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CERDIP-8 PACKAGE DRAWING
8 Pin CERDIP Package
E E1
Millimeters
D
A1
s
A
L
L2
b
b1
e
L1
Min
Inches
Dim
A
3.55
Max
5.08
Min
0.140
Max
0.200
A1
1.27
2.16
0.050
0.085
b
0.97
1.65
0.038
0.065
b1
0.36
0.58
0.014
0.023
C
0.20
0.38
0.008
0.015
D-8
--
10.29
--
0.405
E
5.59
7.87
0.220
0.310
E1
7.73
8.26
0.290
0.325
e
2.54 BSC
0.100 BSC
e1
7.62 BSC
0.300 BSC
L
3.81
5.08
0.150
0.200
L1
3.18
--
0.125
--
L2
0.38
1.78
0.015
0.070
S
--
2.49
--
0.098
Ø
0°
15°
0°
15°
C
e1
ALD1101A/ALD1101B/ALD1101
ø
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