SMD Switching Diode CDST193-G RoHS Device SOT-23 Features 0.119(3.00) 0.110(2.80) -Low forward voltage: VF=0.9V (Typ.) 3 -Fast reverse recovery time: trr=1.6nS (Typ.) 0.056(1.40) 0.047(1.20) Polarity: 1 1. ANODE 2 0.006(0.15) 0.083(2.10) 2. N.C. 0.002(0.05) 0.066(1.70) 3. CATHODE 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) Marking: F3 0.006(0.15) max 0.020(0.50) 0.007(0.20) min 0.013(0.35) Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25°C unless otherwise noted) Symbol Value Unit Non-repetitive peak reverse voltage VRM 85 V DC blocking voltage VR 80 V Forward continuous current IFM 300* mA Average rectified output current IO 100* mA Power dissipation PD 150 mW Junction temperature TJ 125 O C Storage temperature TSTG -55 ~ +125 O C Parameter *Unit rating. Total rating=Unit rating × 1.5 Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Reverse breakdown voltage Conditions IR=100μA Symbol Min Min Max Unit V(BR)R 80 V V V IF=1mA VF1 0.60 V IF=10mA VF2 0.72 V IF=100mA VF3 0.90 VR=30V V Forward voltage 1.2 V IR1 0.1 μA VR=80V IR2 0.5 μA Capacitance between terminals VR=0V, f=1MHz CT 0.90 3.0 pF Reverse recovery time IF=IR=10mA, Irr=0.1×IR trr 1.60 4.0 nS V Reverse current REV:A QW-B0028 Page 1 SMD Switching Diode RATING AND CHARACTERISTIC CURVES (CDST193-G) Fig.2 - Reverse Characteristics Fig.1 - Forward Voltage Characteristics 1 10μ O Ta=125 C IR, Reverse Current (A) IF, Forward Current (A) 100m Ta=100 OC 10m O Ta=25 C 1m O Ta=-25 C 100μ 10μ 1μ O Ta=75 C 100n O Ta=50 C O Ta=25 C 10n 1n 0 0.2 0.4 0.6 0.8 1.0 1.2 1 20 40 60 80 VF, Forward Voltage (V) VR, Reverse Voltage (V) Fig.3 - Capacitance Between Terminals Fig.4 - Reverse Recovery Time Characteristics 1.0 Ta=25 OC trr, Reverse Recovery Time (nS) CT, Total Capacitance (pF) 1.6 f=1MHz Ta=25 OC 1.2 0.8 0.4 0 0.1 1 10 VR, Reverse Voltage (V) 100 0.5 0.1 0.1 1.0 10 100 IF, Forward Current (mA) REV:A QW-B0028 Page 2