SEMICONDUCTOR BC817 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L H D 1 ) RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA PC* 350 mW Tj 150 Tstg -55 150 P Collector Power Dissipation Junction Temperature Storage Temperature Range P J SYMBOL M K C CHARACTERISTIC N MAXIMUM RATING (Ta=25 3 G A 2 MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P Complementary to BC807. 1. EMITTER 2. BASE 3. COLLECTOR * : Package Mounted On 99.9% Alumina 10 8 SOT-23 0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A hFE(1) VCE=1V, IC=100mA 100 - 630 hFE(2) VCE=1V, IC=500mA 40 - - VCE(sat) IC=500mA, IB=50mA - - 0.7 V Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V Transition Frequency fT 100 - - MHz - 5 - pF DC Current Gain (Note) Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE(1) Classification VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz 16:100 250 , 25:160 400 , 40:250 630 Marking Lot No. MARK SPEC TYPE BC817-16 BC817-25 BC817-40 MARK 6A 6B 6C 2009. 2. 19 Revision No : 5 Type Name 1/2 BC817 h FE - I C COMMON EMITTER VCE =1V Ta=100 C Ta=25 C 50 Ta=-25 C 30 30 100 300 7 6 5 4 400 3 2 200 I B =1mA 0 10 10 1000 0 0 1 2 0.1 0.01 10 C Ta=-25 C 30 100 300 TRANSITION FREQUENCY f T (MHz) C 3 0.4 0.6 0.8 1.0 fT - I C P C - Ta 100 30 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 2009. 2. 19 10 BASE-EMITTER VOLTAGE V BE (V) COMMON EMITTER Ta=25 C VCE =5V 1 30 COLLECTOR CURRENT I C (mA) 300 6 100 1 0.2 1000 500 10 300 100 100 Ta= 0.03 Ta=100 C 5 COMMON EMITTER VCE =1V Ta= COLLECTOR CURRENT I C (mA) 0.3 Revision No : 5 1000 COLLECTOR POWER DISSIPATION P C (mW) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1000 COMMON EMITTER I C /IB =25 Ta=25 C 4 I C - V BE VCE(sat) - I C 1 3 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT IC (mA) 3 8 600 Ta=25 C 100 COMMON EMITTER Ta=25 C C 300 800 Ta= 25 500 COLLECTOR CURRENT IC (mA) DC CURRENT GAIN h FE 1000 I C - VCE 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2