B5817W-B5819W Schottky Barrier Diode + SOD-123 0.022(0.55) Typ. Min. 0.053(1.35) Max. - Features 0.152(3.85) 0.140(3.55) 0.112(2.85) 0.100(2.55) 0.010(0.25) Min. For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. 0.067(1.70) 0.055(1.40) 0.006(0.15) Typ. Min. MARKING: B5817W: SJ B5818W:SK B5819W: SL 0.004(0.10) Max. Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symbol B5817W B5818W B5819W Unit Non-Repetitive Peak reverse voltage VRM 20 30 40 V Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V Parameter RMS Reverse Voltage Average Rectified Output Current 1 IO A Peak forward surge current @=8.3ms IFSM 25 A Repetitive Peak Forward Current IFRM 625 mA Pd 250 mW RθJA 500 K/W TSTG -65~+150 ℃ Power Dissipation Thermal Ambient Resistance Junction Storage temperature to ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified) MIN MAX UNIT IR= 1mA Reverse breakdown voltage Reverse voltage leakage current IR VR=20V VR=30V VR=40V B5817W Forward voltage VF B5818W B5819W Diode capacitance http://www.luguang.cn B5817W B5818W B5819W B5817W B5818W B5819W V(BR) CD 20 30 40 V 1 IF=1A 0.45 IF=3A 0.75 IF=1A 0.55 IF=3A 0.875 IF=1A 0.6 IF=3A 0.9 VR=4V, f=1MHz mail:[email protected] 120 mA V V V pF B5817W-B5819W Schottky Barrier Diode Typical Characteristics http://www.luguang.cn mail:[email protected]