FLL410IK-3C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5 – 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Item Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V W Total Power Dissipation PT 100 Storage Temperature Tstg -65 to +175 o Channel Temperature Tch 175 o C C RECOMMENNDED OPERATING CONDITION(Case Temperature Tc=25oC) Item Symbol Condition Limit Unit ≤12 V DC Input Voltage VDS Gate Current IGF RG=5Ω ≤88 mA Gate Current IGR RG=5Ω ≥-25 mA ≤145 o Operating Channel Temperature Tch C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Test Conditions Symbol Drain Current IDSS VDS=5V, VGS=0V Pinch-off Voltage Vp Gate-Source Breakdown Voltage VGSO VDS=5V, IDS=110mA IGS=-1.1mA Output Power POUT Linear Gain GL *1 Drain Current Idsr Power-added Efficiency ηadd Thermal Resistance Rth VDS=12V f=2.6 GHz IDS=3A Pin=35.0dBm Channel to Case *１：GL is measured at Pin=22.0dBm ESD Class Ⅲ Limit Typ. 4.0 -0.1 -0.3 -0.5 -5.0 - - V 45.0 46.0 - dBm 12.0 13.0 - dB - 5.9 7.6 A - 52 - - 1.3 Max. - 1.5 Unit A V % o C/W CASE STYLE: IK 2000V ~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.1 Oct 2003 Min. - 1 FLL410IK-3C L-Band High Power GaAs FET VDS=12V, IDS(DC)=3A 48 48 Pin=36dBm 46 Pin=34dBm Output Power [dBm] 44 Pin=30dBm 42 40 Pin=26dBm 38 36 Pin=22dBm 34 32 2.35 2.45 2.55 2.65 2.75 VDS=12V, IDS(DC)=3A, f=2.6GHz -20 70 44 60 42 50 40 40 38 30 36 20 34 10 32 0 21 23 25 27 29 31 33 35 37 2.85 Input Power [dBm] IMD vs. TOTAL OUTPUT POWER VDS=12V, f=2.6GHz, Df=5MHz -24 IM3 -28 -32 -36 -40 -44 IM5 2A 3A -48 5A -52 2A -56 3A 5A -60 24 26 28 30 32 34 36 38 40 42 44 Total Output Power [dBm] 2 80 46 Frequency [GHz] IMD [dBc] Output Power [dBm] OUTPUT POWER , POWER ADDED EFFICIENCY vs. TOTAL INPUT POWER Power Added Efficiency[%] OUTPUT POWER vs. INPUT POWER FLL410IK-3C L-Band High Power GaAs FET ■ S-PARAMETER +90° +50j +100j +25j +250j +10j 2.6GHz 2.6GHz 2.6G H z ∞ ±180° 6 2 Scale for |S21| 0° Scale for |S 12| 0 -250j -10j 25 -25j 10Ω -100j 0.3 -90° S 11 -50j S 22 S 12 S 21 VDS=12V, IDS=3.0A Freq [GHz] 1.50 1.60 1.70 1.80 1.90 2.00 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 S11 MAG 0.95 0.94 0.92 0.91 0.89 0.87 0.83 0.78 0.70 0.52 0.22 0.52 0.72 0.82 0.85 0.87 0.88 0.89 0.90 0.91 ANG 139.13 136.13 132.48 129.08 125.19 121.65 112.20 106.32 97.54 85.55 114.34 153.17 139.88 129.39 121.63 116.02 110.41 105.71 100.75 97.00 S21 MAG 0.66 0.73 0.83 0.93 1.08 1.26 1.82 2.27 2.86 3.75 4.29 3.43 2.23 1.54 1.10 0.87 0.66 0.56 0.47 0.42 ANG 5.71 -1.34 -11.38 -21.69 -33.36 -45.28 -76.40 -95.83 -118.23 -149.12 166.53 121.10 89.90 71.09 57.03 45.39 35.06 28.49 20.22 15.07 3 S12 MAG 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.03 0.04 0.04 0.04 0.03 0.02 0.02 0.01 0.01 0.01 0.01 0.01 ANG -7.76 -21.24 -27.54 -37.64 -48.85 -64.79 -97.72 -122.75 -148.63 173.08 127.14 82.29 50.87 27.82 15.34 -3.89 -7.86 -16.93 -25.52 -22.89 S22 MAG 0.85 0.83 0.80 0.76 0.72 0.68 0.61 0.57 0.52 0.40 0.22 0.47 0.65 0.72 0.76 0.79 0.82 0.84 0.86 0.86 ANG 137.80 134.28 130.79 127.82 125.28 122.79 119.58 117.16 112.58 105.59 139.17 165.62 155.17 145.97 138.08 130.98 125.09 120.80 117.16 113.34 FLL410IK-3C L-Band High Power GaAs FET ■ BOARD LAYOUT(Reference) <INPUT SIDE> εr=3.5 <OUTPUT SIDE> εr=3.5 4 εr=3.5, t=0.6mm Unit : mm FLL410IK-3C L-Band High Power GaAs FET ■ Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 5 FLL410IK-3C L-Band High Power GaAs FET For further information please contact : CAUTION FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. HONG KONG BRANCH Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 FUJITSU QUANTUM DEVICES LTD. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL: +81-55-275-4411 FAX: +81-55-275-9461 FUJITSU QUANTUM DEVICES LIMITED Business Development Division Hachioji Daiichi-Seimei Bldg., 11th Floor 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2004 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. 6