Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB applications GENERAL DESCRIPTION Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in Residual Current Devices/ Ground Fault Interrupters/ Leakage Current Circuit Breakers (RCD/ GFI/ LCCB) applications where a minimum IGT limit is needed. These devices may be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - SOT223 PIN cathode 2 anode 3 gate tab QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER anode MAX. MAX. MAX. MAX. UNIT BT168 Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current PIN CONFIGURATION DESCRIPTION 1 BT168W series BW 200 DW 400 EW 500 GW 600 V 0.6 0.6 0.6 0.6 A 1 8 1 8 1 8 1 8 A A SYMBOL 4 a 2 1 k g 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VDRM, VRRM Repetitive peak off-state voltages - IT(AV) Average on-state current IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature IGM VGM VRGM PGM PG(AV) Tstg Tj half sine wave; Tsp ≤ 112 ˚C all conduction angles t = 10 ms t = 8.3 ms half sine wave; Tj = 25 ˚C prior to surge t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs MAX. B 2001 D 4001 E 5001 UNIT G 6001 V - 0.63 A - 1 8 9 A A A - 0.32 50 A2s A/µs -40 - 1 5 5 2 0.1 150 125 A V V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications BT168W series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-sp Thermal resistance junction to solder point Thermal resistance junction to ambient Rth j-a CONDITIONS pcb mounted, minimum footprint pcb mounted, pad area as in fig:14 MIN. TYP. MAX. UNIT - - 15 K/W - 156 70 - K/W K/W MIN. TYP. MAX. UNIT 20 0.2 50 2 2 1.35 0.5 0.3 200 6 5 1.5 0.8 - µA mA mA V V V - 0.05 0.1 mA MIN. TYP. MAX. UNIT - 25 - V/µs - 2 - µs - 100 - µs STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 10 mA; gate open circuit VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ IT = 2 A VD = 12 V; IT = 10 mA; gate open circuit VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C; gate open circuit VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C; RGK = 1 kΩ DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ tgt tq September 1997 2 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications 1 BT169W Ptot / W conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 0.8 Tsp(max) / C BT168W series 1.9 8 116 6 0.4 119 4 0.2 122 2 125 0.7 0 0 2.2 0.1 0.2 0.3 0.4 IF(AV) / A 0.5 0.6 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 1 10 100 Number of half cycles at 50Hz 1000 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. BT169 ITSM / A I TSM time T Tj initial = 25 C max 2.8 4 0 BT169 IT 113 0.6 ITSM / A 10 110 a = 1.57 2 IT(RMS) / A BT134W 1.5 100 1 10 I TSM IT 0.5 time T Tj initial = 25 C max 1 10us 100us 0 0.01 10ms 1ms T/s Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 1.2 1.6 10 VGT(Tj) VGT(25 C) BT151 1.4 0.8 1.2 0.6 1 0.4 0.8 0.2 0.6 0 50 Tsp / C 100 0.4 -50 150 Fig.3. Maximum permissible rms current IT(RMS) , versus solder point temperature Tsp. September 1997 1 112 C 1 0 -50 surge duration / s Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tsp ≤ 112˚C. BT134W IT(RMS) / A 0.1 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications 3 IGT(Tj) IGT(25 C) BT168W series 5 BT169 BT169W IT / A Tj = 125 C Tj = 25 C 2.5 4 2 3 Vo = 1.0 V Rs = 0.27 Ohms 1.5 typ 2 max 1 1 0.5 0 -50 0 50 Tj / C 100 0 150 IL(Tj) IL(25 C) 0.5 1 1.5 2 2.5 VT / V Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 100 BT169 2.5 BT169W Zth j-sp (K/W) 10 2 1 1.5 P D 1 tp 0.1 0.5 t 0 -50 0 50 Tj / C 100 0.01 10us 150 IH(Tj) IH(25 C) 1ms 10ms 0.1s 1s 10s tp / s Fig.11. Transient thermal impedance Zth j-sp, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj, RGK = 1 kΩ. 3 0.1ms 1000 BT169 dVD/dt (V/us) 2.5 100 RGK = 1 kohms 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 150 50 100 150 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj, RGK = 1 kΩ. September 1997 0 Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 4 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications BT168W series MOUNTING INSTRUCTIONS Dimensions in mm. 3.8 min 1.5 min 2.3 1.5 min 6.3 (3x) 1.5 min 4.6 Fig.13. soldering pattern for surface mounting SOT223. PRINTED CIRCUIT BOARD Dimensions in mm. 36 18 60 4.5 4.6 9 10 7 15 50 Fig.14. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). September 1997 5 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications BT168W series MECHANICAL DATA Dimensions in mm 6.7 6.3 Net Mass: 0.11 g B 3.1 2.9 0.32 0.24 0.2 4 A A 0.10 0.02 16 max M 7.3 6.7 3.7 3.3 13 2 1 10 max 1.8 max 1.05 0.80 2.3 0.60 0.85 4.6 3 0.1 M B (4x) Fig.15. SOT223 surface mounting package. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.100 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications BT168W series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.100