ON MPSW05 One watt amplifier transistors(npn silicon) Datasheet

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SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
MPSW05
MPSW06
Unit
Collector – Emitter Voltage
VCEO
60
80
Vdc
Collector – Base Voltage
VCBO
60
80
Vdc
Emitter – Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Operating and Storage Junction
Temperature Range
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
—
—
4.0
—
—
—
0.5
0.5
—
—
0.1
0.1
—
0.1
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MPSW05
MPSW06
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
MPSW05
MPSW06
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
MPSW05
MPSW06
µAdc
ICBO
IEBO
Vdc
µAdc
ICES
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
Vdc
µAdc
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
80
60
—
—
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 250 mAdc, VCE = 1.0 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = 250 mAdc, IB = 10 mAdc)
VCE(sat)
—
0.4
Vdc
Base–Emitter Saturation Voltage
(IC = 250 mAdc, VCE = 5.0 Vdc)
VBE(sat)
—
1.2
Vdc
fT
50
—
MHz
Cobo
—
12
pF
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
400
hFE , DC CURRENT GAIN
TJ = 125°C
VCE = 1.0 V
200
25°C
–55°C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500
1.0
1.0
TJ = 25°C
0.6
0.8
IC = 10 mA
50
mA
100 mA
250 mA
500 mA
0.4
0.2
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
IB, BASE CURRENT (mA)
10
20
Figure 2. Collector Saturation Region
2
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
50
0
0.5
1.0
2.0
5.0
10
50
100
20
IC, COLLECTOR CURRENT (mA)
200
500
Figure 3. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
80
–0.8
TJ = 25°C
60
–1.2
40
C, CAPACITANCE (pF)
θ VB, TEMPERATURE COEFFICIENT (mV/°C)
–1.6
θVB for VBE
–2.0
–2.4
Cibo
20
10
8.0
6.0
–2.8
0.5
1.0
2.0
5.0
20
50
10
100
IC, COLLECTOR CURRENT (mA)
200
Cobo
4.0
0.1
500
0.2
0.5 1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 5. Capacitance
300
200
VCE = 2.0 V
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 4. Base–Emitter Temperature Coefficient
50
100
70
50
DUTY CYCLE ≤ 10%
2k
1.0 ms
1k
100 µs
500
TA = 25°C
200
100
50
20
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 6. Current–Gain — Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
1.0
TC = 25°C
1.0 s
dc
dc
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSW05
MPSW06
10
20
60 80 100
2.0
5.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating Area
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
G
H
J
V
1 2 3
N C
SECTION X–X
N
CASE 029–05
(TO–226AE)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSW05/D
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