30MHz Rail-to-Rail Input-Output Op Amps Features General Description • 30MHz -3dB bandwidth • Supply voltage = 4.5V to 16.5V • Low supply current (per amplifier) = 2.5mA • High slew rate = 33V/µs • Unity-gain stable • Beyond the rails input capability • Rail-to-rail output swing • Available in both standard and space-saving fine pitch packages The EL5210C and EL5410C are low power, high voltage rail-to-rail input-output amplifiers. The EL5210C contains two amplifiers in one package and the EL5410C contains four amplifiers. Operating on supplies ranging from 5V to 15V, while consuming only 2.5mA per amplifier, the EL5410C and EL5210C have a bandwidth of 30MHz -(-3dB). They also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables these amplifiers to offer maximum dynamic range at any supply voltage. Applications • • • • • • • • Driver for A-to-D Converters Data Acquisition Video Processing Audio Processing Active Filters Test Equipment Battery Powered Applications Portable Equipment EL5210C/EL5410C EL5210C/EL5410C The EL5410C and EL5210C also feature fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make these amplifiers ideal for high speed filtering and signal conditioning application. Other applications include battery power, portable devices, and anywhere low power consumption is important. The EL5410C is available in a space-saving 14-Pin TSSOP package, as well as the industry-standard 14-Pin SOIC. The EL5210C is available in the 8-Pin MSOP and 8-Pin SOIC packages. Both feature a standard operational amplifier pin out. These amplifiers operate over a temperature range of -40°C to +85°C. Connection Diagram Ordering Information Part No. Package Tape & Reel Outline # 8-Pin SOIC - MDP0027 EL5210CS-T13 8-Pin SOIC 13” MDP0027 EL5210CY 8-Pin MSOP - MDP0043 EL5210CS EL5210CY-T7 8-Pin MSOP 7” MDP0043 EL5210CY-T13 8-Pin MSOP 13” MDP0043 EL5410CS 14-Pin SOIC - MDP0027 14-Pin SOIC 13” MDP0027 EL5410CR EL5410CS-T13 14-Pin TSSOP - MDP0044 EL5410CR-T13 14-Pin TSSOP 13” MDP0044 VOUTA 1 14 VOUTD VINA- 2 VINA+ 3 13 VIND+ + VOUTA 1 VINA- 2 VS+ 4 11 VSVINA+ 3 VINB+ 5 VOUTB 7 10 VINC+ + - + - VS- 4 9 VINC- + 7 VOUTB + 6 VINB5 VINB+ EL5210C (MSOP-8, SOIC-8) 8 VOUTC EL5410C (TSSOP-14, SOIC-14) Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. © 2000 Elantec Semiconductor, Inc. November 16, 2000 VINB- 6 8 VS+ 12 VIND+ EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps Absolute Maximum Ratings (T A = 25°C) Values beyond absolute maximum ratings can cause the device to be prematurely damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. +18V Supply Voltage between VS+ and VSInput Voltage VS- - 0.5V, VS +0.5V Maximum Continuous Output Current 30mA Maximum Die Temperature Storage Temperature Operating Temperature Power Dissipation ESD Voltage +125°C -65°C to +150°C -40°C to +85°C See Curves 2kV Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Characteristics VS+ = +5V, VS - = -5V, RL = 1kΩ and CL = 12pF to 0V, TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max 3 15 Unit Input Characteristics VOS Input Offset Voltage TCVOS Average Offset Voltage Drift [1] VCM = 0V 7 mV µV/°C IB Input Bias Current RIN Input Impedance CIN Input Capacitance CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -5.5V to 5.5V 50 70 dB AVOL Open-Loop Gain -4.5V ≤ VOUT ≤ 4.5V 65 80 dB VCM = 0V 2 60 1 2 -5.5 nA GΩ pF +5.5 V Output Characteristics VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT -4.9 4.8 -4.8 V 4.9 V Short Circuit Current ±120 mA Output Current ±30 mA Power Supply Performance PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±7.75V IS Supply Current (Per Amplifier) No Load 60 80 2.5 dB 3.75 mA Dynamic Performance SR Slew Rate [2] -4.0V ≤ VOUT ≤ 4.0V, 20% o 80% 33 tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns BW -3dB Bandwidth 30 MHz GBWP Gain-Bandwidth Product 20 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain [3] RF = RG = 1kΩ and VOUT = 1.4V 0.12 % dP Differential Phase[3] RF = RG = 1kΩ and VOUT = 1.4V 0.17 ° 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used 2 V/µs Electrical Characteristics VS+ = 5V, VS- = 0V, RL = 1kΩ and CL = 12pF to 2.5V, TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max 3 15 Unit Input Characteristics VOS Input Offset Voltage TCVOS Average Offset Voltage Drift [1] VCM = 2.5V 7 mV µV/°C IB Input Bias Current RIN Input Impedance CIN Input Capacitance CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to 5.5V 45 66 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 4.5V 65 80 dB VCM = 2.5V 2 60 1 2 -0.5 nA GΩ pF +5.5 V Output Characteristics VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT 100 4.8 200 mV 4.9 V Short Circuit Current ±120 mA Output Current ±30 mA Power Supply Performance PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current (Per Amplifier) No Load 60 80 2.5 dB 3.75 mA Dynamic Performance SR Slew Rate [2] 1V ≤ VOUT ≤ 4V, 20% o 80% 33 tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns BW -3dB Bandwidth 30 MHz GBWP Gain-Bandwidth Product 20 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain [3] RF = RG = 1kΩ and VOUT = 1.4V 0.30 % dP Differential Phase[3] RF = RG = 1kΩ and VOUT = 1.4V 0.66 ° 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used 3 V/µs EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps Electrical Characteristics VS+ = 15V, VS- = 0V, RL = 1kΩ and CL = 12pF to 7.5V, TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max 3 15 Unit Input Characteristics VOS Input Offset Voltage TCVOS Average Offset Voltage Drift [1] IB Input Bias Current RIN Input Impedance VCM = 7.5V 7 VCM = 7.5V 2 mV µV/°C 60 1 nA GΩ CIN Input Capacitance CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to 15.5V 53 72 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 14.5V 65 80 dB 14.65 14.83 V 2 -0.5 pF +15.5 V Output Characteristics VOL Output Swing Low IL = -7.5mA VOH Output Swing High IL = 7.5mA ISC Short Circuit Current ±120 mA IOUT Output Current ±30 mA 170 350 mV Power Supply Performance PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current (Per Amplifier) No Load 60 80 2.5 dB 3.75 mA Dynamic Performance SR Slew Rate [2] 1V ≤ VOUT ≤ 14V, 20% o 80% 33 tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns BW -3dB Bandwidth 30 MHz GBWP Gain-Bandwidth Product 20 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain [3] RF = RG = 1kΩ and VOUT = 1.4V 0.10 % dP Differential Phase[3] RF = RG = 1kΩ and VOUT = 1.4V 0.11 ° 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used 4 V/µs Typical Performance Curves EL5410C Input Offset Voltage Drift EL5410C Input Offset Voltage Distribution 25 21 19 17 11 13 Input Offset Voltage Drift, TCVOS(µ V/°C) Input Bias Current vs Temperature Input Offset Voltage vs Temperature 0.008 4 0.004 Input Bias Current (µ A) 5 3 2 1 VS=±5V 0 -0.004 -0.008 0 -50 -10 30 70 110 -0.012 -50 150 -10 Temperature (°C) 70 110 150 110 150 Output Low Voltage vs Temperature -4.85 4.96 -4.87 4.95 Output Low Voltage (V) VS=±5V IOUT=5mA 4.94 4.93 VS=±5V IOUT=5mA -4.89 -4.91 -4.93 4.92 4.91 -50 30 Temperature (°C) Output High Voltage vs Temperature Output High Voltage (V) 9 7 1 12 8 10 6 4 2 -0 -2 -4 0 -6 0 -8 5 -10 100 5 10 3 Quantity (Amplifiers) 200 15 Input Offset Voltage (mV) Input Offset Voltage (mV) Typical Production Distortion 20 300 -12 Quantity (Amplifiers) VS=±5V Typical Production Distortion VS=±5V TA=25°C 400 15 500 -10 30 70 110 -4.95 -50 150 Temperature (°C) -10 30 70 Temperature (°C) 5 EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps 30MHz Rail-to-Rail Input-Output Op Amps Typical Performance Curves Open-Loop Gain vs Temperature Slew Rate vs Temperature 33.85 90 VS=±5V RL=1kΩ 85 Slew Rate (V/µ S) Open-Loop Gain (dB) 33.80 80 VS=±5V 33.75 33.70 33.65 75 33.60 70 -50 -10 30 70 Temperature (°C) 110 33.55 -40 150 EL5410C Supply Current per Amplifier vs Supply Voltage 80 120 160 EL5410C Supply Current per Amplifier vs Temperature TA=25°C VS=±5V 2.65 2.5 Supply Current (mA) Supply Current (mA) 40 2.7 2.7 2.3 2.1 1.9 2.6 2.55 2.5 2.45 1.7 2.4 -50 1.5 4 8 12 Supply Voltage (V) 16 20 Differential Gain and Phase -10 30 70 Temperature (°C) 110 150 8 10 Harmonic Distortion vs VOP-P -30 0.25 VS=±5V AV=2 RL=1kΩ 0.15 VS=±5V AV=1 RL=1k FIN = 1MHz -40 0.05 Distortion (dB) Diff Gain (%) 0 Temperature (°C) 2.9 -0.05 0 Diff Phase (°) EL5210C/EL5410C EL5210C/EL5410C 100 200 0.20 0.10 HD3 -50 HD2 -60 -70 0 -0.10 -80 0 100 IRE 200 0 2 4 6 VOP-P (V) 6 Typical Performance Curves Open Loop Gain and Phase vs Frequency Frequency Response for Various RL 250 5 100 150 3 60 50 140 -50 Gain VS=±5V TA=25°C RL=1kΩ to GND CL=12pF to GND -20 -60 10 100 Magnitude (Normalized) (dB) 20 10kΩ Phase (°) Gain (dB) Phase -150 1k 10k 100k 1M 10M -250 100M 1kΩ 1 560Ω 0 -1 AV=1 VS=±5V CL=12pF -3 -5 100k 150Ω 1M Frequency Response for Various CL Closed Loop Output Impedance vs Frequency 20 200 100pF AV=1 VS=±5V TA=25°C 10 160 47pF 0 Output Impedance (Ω) Magnitude (Normalized) (dB) 1000pF 10pF -10 RL=1kΩ AV=1 VS=±5V -20 -30 100k 120 80 40 1M 10M 0 10k 100M 100k Frequency (Hz) Maximum Output Swing vs Frequency 80 8 70 6 4 2 0 10k 1M Frequency (Hz) 10M 30M CMRR vs Frequency 10 CMRR (dB) Maximum Output Swing (VP-P) 100M 10M Frequency (Hz) Frequency (Hz) VS=±5V TA=25°C AV=1 RL=1kΩ CL=12pF Distortion <1% 60 50 VS=±5V TA=25°C 40 30 100k 1M 10 10M Frequency (Hz) 100 1k 10k 100k Frequency (Hz) 7 1M 10M 30M EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps 30MHz Rail-to-Rail Input-Output Op Amps Typical Performance Curves Input Voltage Noise Spectral Density vs Frequency PSRR vs Frequency 80 1000 PSRR+ PSRR (dB) Voltage Noise (nV√Hz) PSRR- 60 40 VS=±5V TA=25°C 20 0 100 1k 10k 100k 1M 100 10 1 100 10M 1k 10k Frequency (Hz) 0.010 0.008 -80 0.006 -100 XTalk (dB) THD+ N (%) 10M 100M Channel Separation vs Frequency Response -60 0.004 VS=±5V RL=1kΩ AV=1 VIN=0.5VRMS 0.002 1M 100k Frequency (Hz) Total Harmonic Distortion + Noise vs Frequency Dual measured Channel A to B Quad measured Channel A to D or B to C Other combinations yield improved rejection -120 VS=±5V RL=1kΩ AV=1 VIN=110mVRMS -140 0 -160 1k 10k Frequency (Hz) 1k 100k Small-Signal Overshoot vs Load Capacitance 100k 1M Frequency (Hz) 10M 30M Settling Time vs Step Size VS=±5V AV=1 RL=1kΩ VIN=±50mV TA=25°C 4 3 2 Step Size (V) 80 10k 5 100 Overshoot (%) EL5210C/EL5410C EL5210C/EL5410C 60 40 VS=±5V AV=1 RL=1k CL=12pF TA=25°C 0.1% 1 0 -1 -2 0.1% -3 20 -4 -5 70 0 10 100 Load Capacitance (pF) 1000 90 110 130 150 170 Settling Time (ns) 8 190 210 230 Typical Performance Curves Large Signal Transient Response 1V Small Signal Transient Response 200ns 50mV VS=±5V TA=25°C AV=1 RL=1kΩ CL=12pF VS=±5V TA=25°C AV=1 RL=1kΩ CL=12pF 9 100nS EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps Pin Descriptions EL5210C EL5410C Name 1 1 VOUTA Function Equivalent Circuit Amplifier A Output VS+ VSGND Circuit 1 2 2 VINA- Amplifier A Inverting Input VS+ VSCircuit 2 3 3 VINA+ 8 4 VS+ 5 5 VINB+ Amplifier B Non-Inverting Input (Reference Circuit 2) 6 6 VINB- Amplifier B Inverting Input (Reference Circuit 2) 7 7 VOUTB Amplifier B Output (Reference Circuit 1) 8 VOUTC Amplifier C Output (Reference Circuit 1) 9 VINC- Amplifier C Inverting Input (Reference Circuit 2) 10 VINC+ Amplifier C Non-Inverting Input (Reference Circuit 2) 11 VS- 12 VIND+ Amplifier D Non-Inverting Input (Reference Circuit 2) 13 VIND- Amplifier D Inverting Input (Reference Circuit 2) 14 VOUTD Amplifier D Output (Reference Circuit 1) 4 Amplifier A Non-Inverting Input (Reference Circuit 2) Positive Power Supply Negative Power Supply 10 Applications Information Product Description connected to GND. The input is a 10Vp-p sinusoid. The output voltage is approximately 9.8VP-P. 10µ S VS=±5V TA=25°C AV=1 VIN=10VP-P 5V Input 5V Output The EL5210C and EL5410C voltage feedback amplifiers are fabricated using a high voltage CMOS process. They exhibit Rail-to-Rail input and output capability, are unity gain stable and have low power consumption (2.5mA per amplifier). These features make the EL5210C and EL5410C ideal for a wide range of general-purpose applications. Connected in voltage follower mode and driving a load of 1kΩ and 12pF, the EL5210C and EL5410C have a -3dB bandwidth of 30MHz while maintaining a 33V/µS slew rate. The EL5210C is a dual amplifier while the EL5410C is a quad amplifier. Operating Voltage, Input, and Output The EL5210C and EL5410C are specified with a single nominal supply voltage from 5V to 15V or a split supply with its total range from 5V to 15V. Correct operation is guaranteed for a supply range of 4.5V to 16.5V. Most EL5210C and EL5410C specifications are stable over both the full supply range and operating temperatures of -40 °C to +85 °C. Parameter variations with operating voltage and/or temperature are shown in the typical performance curves. Figure 1. Operation with Rail-to-Rail Input and Output Short Circuit Current Limit The EL5210C and EL5410C will limit the short circuit current to +/-120mA if the output is directly shorted to the positive or the negative supply. If an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. Maximum reliability is maintained if the output continuous current never exceeds +/-30mA. This limit is set by the design of the internal metal interconnects. The input common-mode voltage range of the EL5210C and EL5410C extends 500mV beyond the supply rails. The output swings of the EL5210C and EL5410C typically extend to within 100mV of positive and negative supply rails with load currents of 5mA. Decreasing load currents will extend the output voltage range even closer to the supply rails. Figure 1 shows the input and output waveforms for the device in the unity-gain configuration. Operation is from +/-5V supply with a 1kΩ load Output Phase Reversal The EL5210C and EL5410C are immune to phase reversal as long as the input voltage is limited from VS- 0.5V to VS+ +0.5V. Figure 2 shows a photo of the output of the device with the input voltage driven beyond the supply rails. Although the device's output will not change phase, the input's overvoltage should be avoided. If an input voltage exceeds supply voltage by more than 0.6V, electrostatic protection diodes placed in the input 11 EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps power supply voltage, plus the power in the IC due to the loads, or: stage of the device begin to conduct and overvoltage damage could occur. P D MAX = Σi [ V S × I SMA X + ( V S + – V OU T i ) × I L OA D i ] 1V 10µ S when sourcing, and P D MA X = Σi [ V S × I SM AX + ( V OU T i – V S - ) × I L OA D i ] when sinking. VS=±2.5V TA=25°C AV=1 VIN=6VP-P Where: i = 1 to 2 for Dual and 1 to 4 for Quad 1V VS = Total Supply Voltage ISMAX = Maximum Supply Current Per Amplifier Figure 2. Operation with Beyond-the-Rails Input VOUTi = Maximum Output Voltage of the Application Power Dissipation ILOADi = Load current With the high-output drive capability of the EL5210C and EL5410C amplifiers, it is possible to exceed the 125°C 'absolute-maximum junction temperature' under certain load current conditions. Therefore, it is important to calculate the maximum junction temperature for the application to determine if load conditions need to be modified for the amplifier to remain in the safe operating area. If we set the two PDMAX equations equal to each other, we can solve for RLOADi to avoid device overheat. Figure 3 and Figure 4 provide a convenient way to see if the device will overheat. The maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. By using the previous equation, it is a simple matter to see if PDMAX exceeds the device's power derating curves. To ensure proper operation, it is important to observe the recommended derating curves shown in Figure 3 and Figure 4. The maximum power dissipation allowed in a package is determined according to: T JM AX – T A MA X P D MAX = -------------------------------------------Θ JA Where: TJMAX = Maximum Junction Temperature TAMAX= Maximum Ambient Temperature ΘJA = Thermal Resistance of the Package PDMAX = Maximum Power Dissipation in the Package. The maximum power dissipation actually produced by an IC is the total quiescent supply current times the total 12 lower. The inverting input should be directly connected to the output and the non-inverting input tied to the ground plane. Packages Mounted on a JEDEC JESD51-7 High Effective Thermal Conductivity Test Board 1200 1.136W Power Dissipation (mW) MAX TJ=125°C 1.0W 909mW 1000 Driving Capacitive Loads The EL5210C and EL5410C can drive a wide range of capacitive loads. As load capacitance increases, however, the -3dB bandwidth of the device will decrease and the peaking increase. The amplifiers drive 10pF loads in parallel with 1kΩ with just 1.2dB of peaking, and 100pF with 6.5dB of peaking. If less peaking is desired in these applications, a small series resistor (usually between 5Ω and 50Ω) can be placed in series with the output. However, this will obviously reduce the gain slightly. Another method of reducing peaking is to add a "snubber" circuit at the output. A snubber is a shunt load consisting of a resistor in series with a capacitor. Values of 150Ω and 10nF are typical. The advantage of a snubber is that it does not draw any DC load current or reduce the gain 833mW 800 600 SO14 θJA=88°C/W SO8 θJA=110°C/W 400 TSSOP14 θJA=100°C/W MSOP8 θJA=115°C/W 200 0 0 25 50 75 85 100 Ambient Temperature (°C) 125 150 Figure 3. Package Power Dissipation vs Ambient Temperature Packages Mounted on a JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board Power Supply Bypassing and Printed Circuit Board Layout 1200 MAX TJ=125°C The EL5210C and EL5410C can provide gain at high frequency. As with any high-frequency device, good printed circuit board layout is necessary for optimum performance. Ground plane construction is highly recommended, lead lengths should be as short as possible and the power supply pins must be well bypassed to reduce the risk of oscillation. For normal single supply operation, where the VS- pin is connected to ground, a 0.1µF ceramic capacitor should be placed from VS+ to pin to VS- pin. A 4.7µF tantalum capacitor should then be connected in parallel, placed in the region of the amplifier. One 4.7µF capacitor may be used for multiple devices. This same capacitor combination should be placed at each supply pin to ground if split supplies are to be used. Power Dissipation (mW) 1000 800 SO14 θJA=120°C/W 833mW 606mW 600 625mW TSSOP14 θJA=165°C/W 485mW 400 SO8 θJA=160°C/W 200 MSOP8 θJA=206°C/W 0 0 25 50 75 85 100 Ambient Temperature (°C) 125 150 Figure 4. Package Power Dissipation vs Ambient Temperature Unused Amplifiers It is recommended that any unused amplifiers in a dual and a quad package be configured as a unity gain fol- 13 EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps EL5210C/EL5410C EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps General Disclaimer Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. November 16, 2000 WARNING - Life Support Policy Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages. Elantec Semiconductor, Inc. 675 Trade Zone Blvd. Milpitas, CA 95035 Telephone: (408) 945-1323 (888) ELANTEC Fax: (408) 945-9305 European Office: +44-118-977-6080 Japan Technical Center: +81-45-682-5820 14 Printed in U.S.A.