MGSF1N02ELT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. http://onsemi.com 750 mAMPS, 20 VOLTS RDS(on) = 85 mW N−Channel Features 3 • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 8.0 Vdc Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) 750 2000 PD 400 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance − Junction−to−Ambient RqJA 300 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds MARKING DIAGRAM/ PIN ASSIGNMENT mA ID IDM Total Power Dissipation @ TA = 25°C 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 Drain 1 SOT−23 CASE 318 STYLE 21 NE M G G 1 Gate 2 Source NE = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MGSF1N02ELT1 SOT−23 3000/Tape & Reel MGSF1N02ELT1G SOT−23 Pb−Free 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Publication Order Number: MGSF1N02ELT1/D MGSF1N02ELT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Source Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) IGSS − − ± 0.1 mAdc Gate−Source Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 0.5 − 1.0 Vdc Static Drain−to−Source On−Resistance (VGS = 4.5 Vdc, ID = 1.0 A) (VGS = 2.5 Vdc, ID = 0.75 A) rDS(on) − − − − 0.085 0.115 mAdc ON CHARACTERISTICS (Note 1) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Ciss − 160 − Output Capacitance (VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Coss − 130 − Transfer Capacitance (VDG = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Crss − 60 − td(on) − 6.0 − tr − 26 − td(off) − 117 − tf − 105 − QT − 6500 − pC pF SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 5 Vdc, ID = 1.0 Adc, RL = 5 W, RG = 6 W) Fall Time Total Gate Charge (VDS = 16 Vdc, ID = 1.2 Adc, VGS = 4.0 Vdc) ns SOURCE−DRAIN DIODE CHARACTERISTICS IS − − 0.6 A Pulsed Current Continuous Current ISM − − 0.75 − Forward Voltage (Note 2) (VGS = 0 Vdc, IS = 0.6 Adc) VSD − − 1.2 V 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 2.5 2 2.5 V 2 ID, DRAIN CURRENT (AMPS) ID , DRAIN CURRENT (AMPS) 1.8 TJ = 150°C 1.5 25°C − 55°C 1 0.5 2.25 V 1.6 1.75 V 2.0 V 1.4 1.5 V 1.2 1 0.8 0.6 VGS = 1.25 V 0.4 0.2 0 0.5 0.8 1.1 1.4 1.7 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0 2.0 0 Figure 1. Transfer Characteristics 0.5 1 1.5 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 2. On−Region Characteristics http://onsemi.com 2 2.5 MGSF1N02ELT1 RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) 0.2 VGS = 2.5 V 0.18 TJ = 150°C 0.16 0.14 0.12 25°C 0.1 −55 °C 0.08 0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 0.14 0.08 25°C 0.06 −55 °C 0.04 0.02 0 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.4 VGS = 2.5 V ID = 1.0 A 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 −50 0 −25 50 25 75 100 125 0 0.2 0.4 0.6 0.8 1.2 1 1.4 5 2 4 3 2 ID = 1.2 A 1 0 150 VDS = 16 V TJ = 25°C 2000 0 6000 4000 8000 10000 QT, TOTAL GATE CHARGE (pC) Figure 6. Gate Charge Figure 5. On−Resistance Variation Over Temperature 500 1 450 25°C −55 °C C, CAPACITANCE (pF) TJ = 150°C f = 1 MHz TJ = 25°C 400 0.1 0.01 350 300 250 200 Ciss 150 Coss 100 Crss 50 0.001 1.8 ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (°C) ID, DIODE CURRENT (AMPS) 1.6 Figure 4. On−Resistance versus Drain Current VGS = 4.5 V ID = 1.2 A 1.5 TJ = 150°C 0.1 Figure 3. On−Resistance versus Drain Current 1.6 VGS = 4.5 V 0.12 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 0 1 2 3 4 5 6 7 8 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage Figure 8. Capacitance Variation http://onsemi.com 3 9 10 MGSF1N02ELT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E 1 c 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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