ON MGSF1N02ELT1 Power mosfet Datasheet

MGSF1N02ELT1
Preferred Device
Power MOSFET
750 mAmps, 20 Volts
N−Channel SOT−23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
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750 mAMPS, 20 VOLTS
RDS(on) = 85 mW
N−Channel
Features
3
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available
1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 8.0
Vdc
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
750
2000
PD
400
mW
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
Thermal Resistance − Junction−to−Ambient
RqJA
300
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
MARKING DIAGRAM/
PIN ASSIGNMENT
mA
ID
IDM
Total Power Dissipation @ TA = 25°C
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
Drain
1
SOT−23
CASE 318
STYLE 21
NE M G
G
1
Gate
2
Source
NE
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MGSF1N02ELT1
SOT−23
3000/Tape & Reel
MGSF1N02ELT1G
SOT−23
Pb−Free
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
MGSF1N02ELT1/D
MGSF1N02ELT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
−
−
Vdc
−
−
−
−
1.0
10
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Source Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
IGSS
−
−
± 0.1
mAdc
Gate−Source Threshold Voltage (VDS = VGS, ID = 250 mAdc)
VGS(th)
0.5
−
1.0
Vdc
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 1.0 A)
(VGS = 2.5 Vdc, ID = 0.75 A)
rDS(on)
−
−
−
−
0.085
0.115
mAdc
ON CHARACTERISTICS (Note 1)
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc, VGS = 0
V, f = 1.0 Mhz)
Ciss
−
160
−
Output Capacitance
(VDS = 5.0 Vdc, VGS = 0
V, f = 1.0 Mhz)
Coss
−
130
−
Transfer Capacitance
(VDG = 5.0 Vdc, VGS = 0
V, f = 1.0 Mhz)
Crss
−
60
−
td(on)
−
6.0
−
tr
−
26
−
td(off)
−
117
−
tf
−
105
−
QT
−
6500
−
pC
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 5 Vdc, ID = 1.0 Adc,
RL = 5 W, RG = 6 W)
Fall Time
Total Gate Charge
(VDS = 16 Vdc, ID = 1.2 Adc,
VGS = 4.0 Vdc)
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
IS
−
−
0.6
A
Pulsed Current
Continuous Current
ISM
−
−
0.75
−
Forward Voltage (Note 2) (VGS = 0 Vdc, IS = 0.6 Adc)
VSD
−
−
1.2
V
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
2
2.5 V
2
ID, DRAIN CURRENT (AMPS)
ID , DRAIN CURRENT (AMPS)
1.8
TJ = 150°C
1.5
25°C
− 55°C
1
0.5
2.25 V
1.6
1.75 V
2.0 V
1.4
1.5 V
1.2
1
0.8
0.6
VGS = 1.25 V
0.4
0.2
0
0.5
0.8
1.1
1.4
1.7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
2.0
0
Figure 1. Transfer Characteristics
0.5
1
1.5
2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
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2
2.5
MGSF1N02ELT1
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
0.2
VGS = 2.5 V
0.18
TJ = 150°C
0.16
0.14
0.12
25°C
0.1
−55 °C
0.08
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
0.14
0.08
25°C
0.06
−55 °C
0.04
0.02
0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.4
VGS = 2.5 V
ID = 1.0 A
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
−50
0
−25
50
25
75
100
125
0
0.2
0.4
0.6
0.8
1.2
1
1.4
5
2
4
3
2
ID = 1.2 A
1
0
150
VDS = 16 V
TJ = 25°C
2000
0
6000
4000
8000
10000
QT, TOTAL GATE CHARGE (pC)
Figure 6. Gate Charge
Figure 5. On−Resistance Variation Over
Temperature
500
1
450
25°C
−55 °C
C, CAPACITANCE (pF)
TJ = 150°C
f = 1 MHz
TJ = 25°C
400
0.1
0.01
350
300
250
200
Ciss
150
Coss
100
Crss
50
0.001
1.8
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
ID, DIODE CURRENT (AMPS)
1.6
Figure 4. On−Resistance versus Drain Current
VGS = 4.5 V
ID = 1.2 A
1.5
TJ = 150°C
0.1
Figure 3. On−Resistance versus Drain Current
1.6
VGS = 4.5 V
0.12
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.9
0
1
2
3
4
5
6
7
8
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
Figure 8. Capacitance Variation
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3
9
10
MGSF1N02ELT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
1
c
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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4
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