isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE13003A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 1.5 A IB Base Current 0.75 A PC Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 1.4 20 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn MAX UNIT 3.12 ℃/W 89 ℃/W 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE13003A ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1 A ;IB= 0.25A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1 A ;IB= 0.25A 1.2 V IEBO Emitter Cutoff Current VEB= 9V; IC= 0 1 mA ICEO Collector Cutoff Curren 0.5 mA ICBO Collector Cutoff Curren VCB= 700V; IE= 0 1 mA hFE-1 DC Current Gain IC= 0.5 A; VCE= 5V 8 hFE-2 DC Current Gain IC= 1.5mA; VCE= 5V 5 Current-Gain—Bandwidth Product IC= 0.1 A; VCE= 10V; 5 fT isc website：www.iscsemi.cn CONDITIONS MIN MAX 400 VCE= 400V; IB= 0 2 TYP. UNIT V 40 MHz isc & iscsemi is registered trademark