MSD1819A-- RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 Features High hFE, 210 -- 460 Low VCE(sat), < 0.5 V Moisture Sensitivity Level 1 ESD Protection: Human Body Model > 4000 V Machine Model > 400 V These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER 3 1 2 MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Collector Current -- Continuous Collector Current -- Peak SC--70 (SOT--323) CASE 419 STYLE 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation (Note 1) Characteristic PD 150 mW Junction Temperature TJ 150 C Storage Temperature Range Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. ZR M G G 1 ZR = Device Code M = Date Code* G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MSD1819A--RT1G Package Shipping† SC--70/ SOT--323 (Pb--Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2010 October, 2010 -- Rev. 7 1 Publication Order Number: MSD1819A--RT1/D MSD1819A--RT1 ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Characteristic V(BR)CEO 50 -- Vdc Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0) V(BR)EBO 7.0 -- Vdc Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO -- 0.1 mA Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO -- 0.1 mA DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) hFE1 hFE2 210 90 340 -- VCE(sat) -- 0.5 Collector-Emitter Saturation Voltage (Note 2) (IC = 100 mAdc, IB = 10 mAdc) -- Vdc 2. Pulse Test: Pulse Width 300 ms, D.C. 2%. VCE(sat), COLLECTOR--EMITTER SATURATION VOLTAGE (V) 0.30 200 150 100 50 RθJA = 833C/W 0 --50 0 50 150C 0.15 0.10 25C --55C 0.05 0 150 0.0001 0.001 0.01 0.1 Figure 1. Derating Curve Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 150C (10 V) 150C (2 V) 350 300 25C (10 V) 250 25C (2 V) 200 --55C (10 V) 150 --55C (2 V) 100 50 0.0001 0.20 IC, COLLECTOR CURRENT (A) 400 0 IC/IB = 10 0.25 TA, AMBIENT TEMPERATURE (C) 450 hFE, DC CURRENT GAIN 100 VBE(sat), BASE--EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 250 0.001 0.01 0.1 --55C 0.85 25C 0.75 0.65 150C 0.55 0.45 0.35 0.25 1 IC/IB = 10 0.95 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 2 1 1 VCE, COLLECTOR--EMITTER VOLTAGE (V) 1.0 0.9 --55C 0.8 0.7 25C 0.6 0.5 150C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1 mA TA = 25C 1.0 10 mA IC = 100 mA 50 mA 0.8 0.6 0.4 0.2 0 500 mA 0.000001 0.00001 0.0001 0.001 0.01 IB, BASE CURRENT (A) Figure 5. Base Emitter Turn--On Voltage vs. Collector Current Figure 6. Collector Saturation Region 18 17 6.0 16 15 14 Cibo (pF) 13 12 11 10 9 8 7 1.2 IC, COLLECTOR CURRENT (A) Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) VBE(on), BASE--EMITTER TURN ON VOLTAGE (V) MSD1819A--RT1 0 1 2 3 4 5 6 5.5 5.0 4.5 4.0 Cobo (pF) 3.5 3.0 2.5 2.0 1.5 1.0 0 5 10 15 20 25 30 Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance http://onsemi.com 3 35 40 MSD1819A--RT1 PACKAGE DIMENSIONS SC--70 (SOT--323) CASE 419--04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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