MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. • Ideal for Coil–On–Plug, IGBT–On–Coil, or Distributorless Ignition System Applications • High Pulsed Current Capability up to 50 A • Gate–Emitter ESD Protection • Temperature Compensated Gate–Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • Optional Gate Resistor (RG) 15 AMPERES 410 VOLTS (Clamped) VCE(on) @ 10 A = 1.8 V Max N–Channel C RG G RGE 4 E 4 1 MAXIMUM RATINGS (–55°C ≤ TJ ≤ 175°C unless otherwise noted) 3 Symbol Value Unit Collector–Emitter Voltage VCES 440 VDC Collector–Gate Voltage VCER 440 VDC VGE 22 VDC IC 15 50 ADC AAC Rating Gate–Emitter Voltage Collector Current–Continuous @ TC = 25°C – Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V PD 150 1.0 Watts W/°C TJ, Tstg –55 to 175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Characteristic Symbol Single Pulse Collector–to–Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L = 2.0 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A, L = 2.0 mH, Starting TJ = 150°C EAS Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 7 1 D2PAK CASE 418B STYLE 4 TO–220AB CASE 221A STYLE 9 2 3 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Collector 4 Collector kV 8.0 G15N40CL YWW G15N40CL YWW 1 Gate UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE CHARACTERISTICS (–55°C ≤ TJ ≤ 175°C) Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, L = 3.0 mH, Pk IL = 25.8 A, Starting TJ = 25°C 2 Value Unit 3 Emitter 2 Collector 1 Gate 3 Emitter 2 Collector G15N40CL = Device Code Y = Year WW = Work Week mJ ORDERING INFORMATION 300 200 EAS(R) mJ Device Package Shipping MGP15N40CL TO–220 50 Units/Rail MGB15N40CLT4 D2PAK 800 Tape & Reel 1000 Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: MGP15N40CL/D MGP15N40CL, MGB15N40CL THERMAL CHARACTERISTICS Characteristic Symbol Unit °C/W RθJC 1.0 TO–220 RθJA 62.5 D2PAK (Note 1) RθJA 50 TL 275 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds °C ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = –40°C 40 C to 150°C 380 410 440 VDC IC = 10 mA TJ = –40°C to 150°C 390 420 450 TJ = 25°C – 1.5 20 TJ = 150°C – 10 40* TJ = –40°C – 0.7 1.5 TJ = 25°C – 0.35 1.0 TJ = 150°C – 8.0 15* TJ = –40°C – 0.05 0.5 TJ = 25°C 25 33 50 TJ = 150°C 25 36 50 TJ = –40°C 25 30 50 OFF CHARACTERISTICS Collector–Emitter Collector Emitter Clamp Clam Voltage Zero Gate Voltage g Collector Current ICES VCE = 350 V V, VGE = 0 V Reverse Collector–Emitter Leakage g Current IECS VCE = –24 24 V Reverse Collector–Emitter Clamp Voltage g BVCES(R) IC = –75 75 mA A Gate–Emitter Clamp Voltage Gate–Emitter Leakage Current Gate Resistor (Optional) Gate Emitter Resistor µADC µ mA VDC BVGES IG = 5.0 mA TJ = –40°C to 150°C 17 20 22 VDC IGES VGE = 10 V TJ = –40°C to 150°C 384 600 1000 µADC RG – TJ = –40°C to 150°C – 70 – Ω RGE – TJ = –40°C to 150°C 10 16 26 kΩ VDC ON CHARACTERISTICS (Note 2) g Gate Threshold Voltage VGE(th) IC = 1 1.0 0 mA, A VGE = VCE Threshold Temperature Coefficient (Negative) – – 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width 300 µS, Duty Cycle 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 2 TJ = 25°C 1.4 1.7 2.0 TJ = 150°C 0.75 1.1 1.4 TJ = –40°C 1.6 1.9 2.1* – – 4.4 – mV/°C MGP15N40CL, MGB15N40CL ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 1.0 1.3 1.6 VDC TJ = 150°C 0.9 1.2 1.5 TJ = –40°C 1.1 1.4 1.7* TJ = 25°C 1.3 1.6 1.9 TJ = 150°C 1.2 1.5 1.8 TJ = –40°C 1.3 1.6 1.9* TJ = 25°C 1.6 1.95 2.25 TJ = 150°C 1.7 2.0 2.3* TJ = –40°C 1.6 1.9 2.2 TJ = 25°C 1.9 2.2 2.5 TJ = 150°C 2.1 2.4 2.7* TJ = –40°C 1.85 2.15 2.45 TJ = 25°C 2.1 2.5 2.9 TJ = 150°C 2.5 2.9 3.3* TJ = –40°C 2.0 2.4 2.8 ON CHARACTERISTICS (continued) (Note 3) Collector–to–Emitter On–Voltage g VCE(on) IC = 6 6.0 0A A, VGE = 4.0 V IC = 10 A A, VGE = 4.0 V IC = 15 A A, VGE = 4.0 V IC = 20 A A, VGE = 4.0 V IC = 25 A A, VGE = 4.0 V Collector–to–Emitter On–Voltage Forward Transconductance VCE(on) IC = 10 A, VGE = 4.5 V TJ = 150°C – 1.5 1.8 VDC gfs VCE = 5.0 V, IC = 6.0 A TJ = –40°C to 150°C 8.0 15 25 Mhos – 1000 1300 pF VCC = 25 V V, VGE = 0 V f = 1.0 MHz TJ = –40°C 40°C to 150°C – 100 130 – 5.0 8.0 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS SWITCHING CHARACTERISTICS (Note 3) ( ) Turn–Off Delayy Time (Inductive) Fall Time (Inductive) ( ) Turn–Off Delayy Time (Resistive) ( ) td(off) VCC = 300 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ L = 300 µH H VCC = 300 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ L = 300 µH H tf td(off) VCC = 300 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ RL = 46 Ω, Ω Fall Time ((Resistive)) tf VCC = 300 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ RL = 46 Ω, Ω Turn–On Delay y Time td(on) VCC = 10 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ RL = 1 1.5 5Ω Rise Time VCC = 10 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ RL = 1 1.5 5Ω tr 3. Pulse Test: Pulse Width 300 µS, Duty Cycle 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 3 TJ = 25°C – 4.0 10 TJ = 150°C – 4.5 10 TJ = 25°C – 7.0 10 TJ = 150°C – 10 15* TJ = 25°C – 4.0 10 TJ = 150°C – 4.5 10 TJ = 25°C – 13 20 TJ = 150°C – 16 20 TJ = 25°C – 1.0 1.5 TJ = 150°C – 1.0 1.5 TJ = 25°C – 4.5 6.0 TJ = 150°C – 5.0 6.0 µSec µ µSec µ µSec µ MGP15N40CL, MGB15N40CL TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 VGE = 10.0 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 60 VGE = 4.5 V 50 VGE = 5.0 V 40 VGE = 4.0 V 30 TJ = 25°C VGE = 3.5 V 20 VGE = 3.0 V 10 VGE = 2.5 V 0 1 3 2 5 4 7 6 VGE = 5.0 V 40 VGE = 4.0 V 30 TJ = 150°C VGE = 3.5 V 20 VGE = 3.0 V 10 8 VGE = 2.5 V 0 3 4 5 6 7 8 Figure 2. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics VCE = 10 V 20 15 TJ = 150°C 10 TJ = 25°C TJ = –40°C 5 0 2 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 30 25 1 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGE, GATE TO EMITTER VOLTAGE (VOLTS) 4.0 3.5 VGE = 5.0 V 3.0 IC = 25 A IC = 20 A 2.5 2.0 1.5 1.0 IC = 15 A 0.5 0.0 –50 IC = 5 A IC = 10 A –25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation Voltage vs. Junction Temperature 10000 2.5 THRESHOLD VOLTAGE (VOLTS) C, CAPACITANCE (pF) VGE = 4.5 V 50 0 0 IC, COLLECTOR CURRENT (AMPS) VGE = 10.0 V Ciss 1000 Coss 100 10 Crss 1 0 20 40 60 80 100 120 Mean + 4 σ 1.5 Mean – 4 σ 1.0 0.5 0.0 –50 140 160 180 200 IC = 1 mA Mean 2.0 –25 0 25 50 75 100 125 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) TEMPERATURE (°C) Figure 5. Capacitance Variation Figure 6. Threshold Voltage vs. Temperature http://onsemi.com 4 150 MGP15N40CL, MGB15N40CL 30 VCC = 50 V VGE = 5.0 V RG = 1000 Ω 25 IL, LATCH CURRENT (AMPS) IL, LATCH CURRENT (AMPS) 30 20 T = 25°C 15 10 T = 150°C 5 0 0 2 4 6 8 15 L = 3.0 mH 10 L = 6.0 mH 5 –25 0 25 50 75 100 125 150 INDUCTOR (mH) TEMPERATURE (°C) Figure 7. Minimum Open Secondary Latch Current vs. Inductor Figure 8. Minimum Open Secondary Latch Current vs. Temperature 175 30 VCC = 50 V VGE = 5.0 V RG = 1000 Ω T = 25°C 25 IL, LATCH CURRENT (AMPS) IL, LATCH CURRENT (AMPS) L = 2.0 mH 20 0 –50 10 30 20 15 T = 150°C 10 5 0 0 2 4 6 8 8 L = 3.0 mH 15 L = 6.0 mH 10 5 –25 0 25 50 75 100 125 150 TEMPERATURE (°C) Figure 9. Typical Open Secondary Latch Current vs. Inductor Figure 10. Typical Open Secondary Latch Current vs. Temperature 175 14 VCC = 300 V VGE = 5.0 V RG = 1000 Ω IC = 10 A L = 300 µH tf 12 tf td(off) 6 4 2 0 –50 20 INDUCTOR (mH) SWITCHING TIME (µS) 10 VCC = 50 V VGE = 5.0 V RG = 1000 Ω L = 2.0 mH 25 0 –50 10 12 SWITCHING TIME (µS) VCC = 50 V VGE = 5.0 V RG = 1000 Ω 25 10 VCC = 300 V VGE = 5.0 V RG = 1000 Ω TJ = 150°C L = 300 µH 8 6 td(off) 4 2 0 –25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 TC, CASE TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS) Figure 11. Switching Speed vs. Case Temperature Figure 12. Switching Speed vs. Collector Current http://onsemi.com 5 16 MGP15N40CL, MGB15N40CL 14 14 VCC = 300 V VGE = 5.0 V TJ = 25°C IC = 10 A L = 300 µH 10 8 12 SWITCHING TIME (µS) SWITCHING TIME (µS) 12 tf 6 td(off) 4 tf 10 VCC = 300 V VGE = 5.0 V TJ = 150°C IC = 10 A L = 300 µH 8 6 td(off) 4 2 2 0 250 500 750 0 250 1000 500 750 1000 RG, EXTERNAL GATE RESISTANCE (Ω) RG, EXTERNAL GATE RESISTANCE (Ω) Figure 13. Switching Speed vs. External Gate Resistance Figure 14. Switching Speed vs. External Gate Resistance R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) 10 Duty Cycle = 0.5 1 0.2 0.1 0.05 0.02 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 P(pk) 0.01 t1 Single Pulse t2 DUTY CYCLE, D = t1/t2 0.01 0.00001 0.0001 0.001 0.01 0.1 TJ(pk) – TA = P(pk) RθJA(t) RθJC ≅ R(t) for t ≤ 0.2 s 1 t,TIME (S) Figure 15. Transient Thermal Resistance (Non–normalized Junction–to–Ambient mounted on fixture in Figure 16) http://onsemi.com 6 10 100 1000 MGP15N40CL, MGB15N40CL 1.5″ 4″ 4″ 0.125″ 4″ Figure 16. Test Fixture for Transient Thermal Curve (48 square inches of 1/8 thick aluminum) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 DC 100 µs 10 1 ms 10 ms 1 100 ms 0.1 0.01 1 10 100 DC 10 100 µs 1 1 ms 10 ms 100 ms 0.1 0.01 1 1000 10 100 1000 COLLECTOR–EMITTER VOLTAGE (VOLTS) COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 17. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TC = 25C) Figure 18. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TC = 125C) http://onsemi.com 7 MGP15N40CL, MGB15N40CL 100 t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 DC 10 t1 = 3 ms, D = 0.30 1 P(pk) 0.1 t1 t2 DUTY CYCLE, D = t1/t2 0.01 1 10 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 P(pk) t1 0.1 t2 DUTY CYCLE, D = t1/t2 0.01 1 1000 t1 = 1 ms, D = 0.05 DC 10 100 1000 COLLECTOR–EMITTER VOLTAGE (VOLTS) COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 19. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 25C) Figure 20. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 125C) http://onsemi.com 8 MGP15N40CL, MGB15N40CL PACKAGE DIMENSIONS TO–220 THREE–LEAD TO–220AB CASE 221A–09 ISSUE AA SEATING PLANE –T– B C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 9: PIN 1. 2. 3. 4. http://onsemi.com 9 GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MGP15N40CL, MGB15N40CL PACKAGE DIMENSIONS D2PAK CASE 418B–04 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E V W –B– 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 –T– SEATING PLANE K D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE T B M M N R STYLE 4: PIN 1. 2. 3. 4. P U L M W J G L L M M F F F VIEW W–W 1 VIEW W–W 2 VIEW W–W 3 http://onsemi.com 10 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 GATE COLLECTOR EMITTER COLLECTOR MGP15N40CL, MGB15N40CL Notes http://onsemi.com 11 MGP15N40CL, MGB15N40CL ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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