ON MGB15N40CL Ignition igbt 15 amps, 410 volt Datasheet

MGP15N40CL,
MGB15N40CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
N–Channel TO–220 and D2PAK
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This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
• Ideal for Coil–On–Plug, IGBT–On–Coil, or Distributorless Ignition
System Applications
• High Pulsed Current Capability up to 50 A
• Gate–Emitter ESD Protection
• Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• Optional Gate Resistor (RG)
15 AMPERES
410 VOLTS (Clamped)
VCE(on) @ 10 A = 1.8 V Max
N–Channel
C
RG
G
RGE
4
E
4
1
MAXIMUM RATINGS (–55°C ≤ TJ ≤ 175°C unless otherwise noted)
3
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
440
VDC
Collector–Gate Voltage
VCER
440
VDC
VGE
22
VDC
IC
15
50
ADC
AAC
Rating
Gate–Emitter Voltage
Collector Current–Continuous
@ TC = 25°C – Pulsed
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
V
PD
150
1.0
Watts
W/°C
TJ, Tstg
–55 to
175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Characteristic
Symbol
Single Pulse Collector–to–Emitter Avalanche
Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A,
L = 2.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A,
L = 2.0 mH, Starting TJ = 150°C
EAS
 Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 7
1
D2PAK
CASE 418B
STYLE 4
TO–220AB
CASE 221A
STYLE 9
2
3
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Collector
4
Collector
kV
8.0
G15N40CL
YWW
G15N40CL
YWW
1
Gate
UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE
CHARACTERISTICS (–55°C ≤ TJ ≤ 175°C)
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, L = 3.0 mH,
Pk IL = 25.8 A, Starting TJ = 25°C
2
Value
Unit
3
Emitter
2
Collector
1
Gate
3
Emitter
2
Collector
G15N40CL = Device Code
Y
= Year
WW
= Work Week
mJ
ORDERING INFORMATION
300
200
EAS(R)
mJ
Device
Package
Shipping
MGP15N40CL
TO–220
50 Units/Rail
MGB15N40CLT4
D2PAK
800 Tape & Reel
1000
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MGP15N40CL/D
MGP15N40CL, MGB15N40CL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Unit
°C/W
RθJC
1.0
TO–220
RθJA
62.5
D2PAK (Note 1)
RθJA
50
TL
275
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = –40°C
40 C to
150°C
380
410
440
VDC
IC = 10 mA
TJ = –40°C to
150°C
390
420
450
TJ = 25°C
–
1.5
20
TJ = 150°C
–
10
40*
TJ = –40°C
–
0.7
1.5
TJ = 25°C
–
0.35
1.0
TJ = 150°C
–
8.0
15*
TJ = –40°C
–
0.05
0.5
TJ = 25°C
25
33
50
TJ = 150°C
25
36
50
TJ = –40°C
25
30
50
OFF CHARACTERISTICS
Collector–Emitter
Collector
Emitter Clamp
Clam Voltage
Zero Gate Voltage
g Collector Current
ICES
VCE = 350 V
V,
VGE = 0 V
Reverse Collector–Emitter Leakage
g Current
IECS
VCE = –24
24 V
Reverse Collector–Emitter Clamp Voltage
g
BVCES(R)
IC = –75
75 mA
A
Gate–Emitter Clamp Voltage
Gate–Emitter Leakage Current
Gate Resistor (Optional)
Gate Emitter Resistor
µADC
µ
mA
VDC
BVGES
IG = 5.0 mA
TJ = –40°C to
150°C
17
20
22
VDC
IGES
VGE = 10 V
TJ = –40°C to
150°C
384
600
1000
µADC
RG
–
TJ = –40°C to
150°C
–
70
–
Ω
RGE
–
TJ = –40°C to
150°C
10
16
26
kΩ
VDC
ON CHARACTERISTICS (Note 2)
g
Gate Threshold Voltage
VGE(th)
IC = 1
1.0
0 mA,
A
VGE = VCE
Threshold Temperature Coefficient
(Negative)
–
–
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width 300 µS, Duty Cycle 2%.
*Maximum Value of Characteristic across Temperature Range.
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2
TJ = 25°C
1.4
1.7
2.0
TJ = 150°C
0.75
1.1
1.4
TJ = –40°C
1.6
1.9
2.1*
–
–
4.4
–
mV/°C
MGP15N40CL, MGB15N40CL
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
1.0
1.3
1.6
VDC
TJ = 150°C
0.9
1.2
1.5
TJ = –40°C
1.1
1.4
1.7*
TJ = 25°C
1.3
1.6
1.9
TJ = 150°C
1.2
1.5
1.8
TJ = –40°C
1.3
1.6
1.9*
TJ = 25°C
1.6
1.95
2.25
TJ = 150°C
1.7
2.0
2.3*
TJ = –40°C
1.6
1.9
2.2
TJ = 25°C
1.9
2.2
2.5
TJ = 150°C
2.1
2.4
2.7*
TJ = –40°C
1.85
2.15
2.45
TJ = 25°C
2.1
2.5
2.9
TJ = 150°C
2.5
2.9
3.3*
TJ = –40°C
2.0
2.4
2.8
ON CHARACTERISTICS (continued) (Note 3)
Collector–to–Emitter On–Voltage
g
VCE(on)
IC = 6
6.0
0A
A,
VGE = 4.0 V
IC = 10 A
A,
VGE = 4.0 V
IC = 15 A
A,
VGE = 4.0 V
IC = 20 A
A,
VGE = 4.0 V
IC = 25 A
A,
VGE = 4.0 V
Collector–to–Emitter On–Voltage
Forward Transconductance
VCE(on)
IC = 10 A, VGE = 4.5 V
TJ = 150°C
–
1.5
1.8
VDC
gfs
VCE = 5.0 V, IC = 6.0 A
TJ = –40°C to
150°C
8.0
15
25
Mhos
–
1000
1300
pF
VCC = 25 V
V, VGE = 0 V
f = 1.0 MHz
TJ = –40°C
40°C to
150°C
–
100
130
–
5.0
8.0
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS (Note 3)
(
)
Turn–Off Delayy Time (Inductive)
Fall Time (Inductive)
(
)
Turn–Off Delayy Time (Resistive)
(
)
td(off)
VCC = 300 V,, IC = 6.5 A
RG = 1.0
1 0 kΩ,
kΩ L = 300 µH
H
VCC = 300 V,, IC = 6.5 A
RG = 1.0
1 0 kΩ,
kΩ L = 300 µH
H
tf
td(off)
VCC = 300 V,, IC = 6.5 A
RG = 1.0
1 0 kΩ,
kΩ RL = 46 Ω,
Ω
Fall Time ((Resistive))
tf
VCC = 300 V,, IC = 6.5 A
RG = 1.0
1 0 kΩ,
kΩ RL = 46 Ω,
Ω
Turn–On Delay
y Time
td(on)
VCC = 10 V,, IC = 6.5 A
RG = 1.0
1 0 kΩ,
kΩ RL = 1
1.5
5Ω
Rise Time
VCC = 10 V,, IC = 6.5 A
RG = 1.0
1 0 kΩ,
kΩ RL = 1
1.5
5Ω
tr
3. Pulse Test: Pulse Width 300 µS, Duty Cycle 2%.
*Maximum Value of Characteristic across Temperature Range.
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3
TJ = 25°C
–
4.0
10
TJ = 150°C
–
4.5
10
TJ = 25°C
–
7.0
10
TJ = 150°C
–
10
15*
TJ = 25°C
–
4.0
10
TJ = 150°C
–
4.5
10
TJ = 25°C
–
13
20
TJ = 150°C
–
16
20
TJ = 25°C
–
1.0
1.5
TJ = 150°C
–
1.0
1.5
TJ = 25°C
–
4.5
6.0
TJ = 150°C
–
5.0
6.0
µSec
µ
µSec
µ
µSec
µ
MGP15N40CL, MGB15N40CL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
VGE = 10.0 V
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
60
VGE = 4.5 V
50
VGE = 5.0 V
40
VGE = 4.0 V
30
TJ = 25°C
VGE = 3.5 V
20
VGE = 3.0 V
10
VGE = 2.5 V
0
1
3
2
5
4
7
6
VGE = 5.0 V
40
VGE = 4.0 V
30
TJ = 150°C
VGE = 3.5 V
20
VGE = 3.0 V
10
8
VGE = 2.5 V
0
3
4
5
6
7
8
Figure 2. Output Characteristics
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
VCE = 10 V
20
15
TJ = 150°C
10
TJ = 25°C
TJ = –40°C
5
0
2
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
30
25
1
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
4.0
3.5
VGE = 5.0 V
3.0
IC = 25 A
IC = 20 A
2.5
2.0
1.5
1.0
IC = 15 A
0.5
0.0
–50
IC = 5 A
IC = 10 A
–25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage vs. Junction Temperature
10000
2.5
THRESHOLD VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
VGE = 4.5 V
50
0
0
IC, COLLECTOR CURRENT (AMPS)
VGE = 10.0 V
Ciss
1000
Coss
100
10
Crss
1
0
20
40
60
80
100 120
Mean + 4 σ
1.5
Mean – 4 σ
1.0
0.5
0.0
–50
140 160 180 200
IC = 1 mA
Mean
2.0
–25
0
25
50
75
100
125
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TEMPERATURE (°C)
Figure 5. Capacitance Variation
Figure 6. Threshold Voltage vs. Temperature
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4
150
MGP15N40CL, MGB15N40CL
30
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
25
IL, LATCH CURRENT (AMPS)
IL, LATCH CURRENT (AMPS)
30
20
T = 25°C
15
10
T = 150°C
5
0
0
2
4
6
8
15
L = 3.0 mH
10
L = 6.0 mH
5
–25
0
25
50
75
100
125
150
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 7. Minimum Open Secondary Latch
Current vs. Inductor
Figure 8. Minimum Open Secondary Latch
Current vs. Temperature
175
30
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
T = 25°C
25
IL, LATCH CURRENT (AMPS)
IL, LATCH CURRENT (AMPS)
L = 2.0 mH
20
0
–50
10
30
20
15
T = 150°C
10
5
0
0
2
4
6
8
8
L = 3.0 mH
15
L = 6.0 mH
10
5
–25
0
25
50
75
100
125
150
TEMPERATURE (°C)
Figure 9. Typical Open Secondary Latch
Current vs. Inductor
Figure 10. Typical Open Secondary Latch
Current vs. Temperature
175
14
VCC = 300 V
VGE = 5.0 V
RG = 1000 Ω
IC = 10 A
L = 300 µH
tf
12
tf
td(off)
6
4
2
0
–50
20
INDUCTOR (mH)
SWITCHING TIME (µS)
10
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
L = 2.0 mH
25
0
–50
10
12
SWITCHING TIME (µS)
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
25
10
VCC = 300 V
VGE = 5.0 V
RG = 1000 Ω
TJ = 150°C
L = 300 µH
8
6
td(off)
4
2
0
–25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
TC, CASE TEMPERATURE (°C)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Switching Speed vs. Case
Temperature
Figure 12. Switching Speed vs. Collector
Current
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5
16
MGP15N40CL, MGB15N40CL
14
14
VCC = 300 V
VGE = 5.0 V
TJ = 25°C
IC = 10 A
L = 300 µH
10
8
12
SWITCHING TIME (µS)
SWITCHING TIME (µS)
12
tf
6
td(off)
4
tf
10
VCC = 300 V
VGE = 5.0 V
TJ = 150°C
IC = 10 A
L = 300 µH
8
6
td(off)
4
2
2
0
250
500
750
0
250
1000
500
750
1000
RG, EXTERNAL GATE RESISTANCE (Ω)
RG, EXTERNAL GATE RESISTANCE (Ω)
Figure 13. Switching Speed vs. External Gate
Resistance
Figure 14. Switching Speed vs. External Gate
Resistance
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
10
Duty Cycle = 0.5
1
0.2
0.1
0.05
0.02
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
P(pk)
0.01
t1
Single Pulse
t2
DUTY CYCLE, D = t1/t2
0.01
0.00001
0.0001
0.001
0.01
0.1
TJ(pk) – TA = P(pk) RθJA(t)
RθJC ≅ R(t) for t ≤ 0.2 s
1
t,TIME (S)
Figure 15. Transient Thermal Resistance
(Non–normalized Junction–to–Ambient mounted on
fixture in Figure 16)
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6
10
100
1000
MGP15N40CL, MGB15N40CL
1.5″
4″
4″
0.125″
4″
Figure 16. Test Fixture for Transient Thermal Curve
(48 square inches of 1/8 thick aluminum)
100
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
100
DC
100 µs
10
1 ms
10 ms
1
100 ms
0.1
0.01
1
10
100
DC
10
100 µs
1
1 ms
10 ms
100 ms
0.1
0.01
1
1000
10
100
1000
COLLECTOR–EMITTER VOLTAGE (VOLTS)
COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 17. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 25C)
Figure 18. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 125C)
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7
MGP15N40CL, MGB15N40CL
100
t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10
DC
10
t1 = 3 ms, D = 0.30
1
P(pk)
0.1
t1
t2
DUTY CYCLE, D = t1/t2
0.01
1
10
100
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
100
t1 = 2 ms, D = 0.10
10
t1 = 3 ms, D = 0.30
1
P(pk)
t1
0.1
t2
DUTY CYCLE, D = t1/t2
0.01
1
1000
t1 = 1 ms, D = 0.05
DC
10
100
1000
COLLECTOR–EMITTER VOLTAGE (VOLTS)
COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 19. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 25C)
Figure 20. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 125C)
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8
MGP15N40CL, MGB15N40CL
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
SEATING
PLANE
–T–
B
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 9:
PIN 1.
2.
3.
4.
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9
GATE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MGP15N40CL, MGB15N40CL
PACKAGE DIMENSIONS
D2PAK
CASE 418B–04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B-01 THRU 418B-03 OBSOLETE, NEW
STANDARD 418B-04.
C
E
V
W
–B–
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
–T–
SEATING
PLANE
K
D
H
3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
T B
M
M
N
R
STYLE 4:
PIN 1.
2.
3.
4.
P
U
L
M
W
J
G
L
L
M
M
F
F
F
VIEW W–W
1
VIEW W–W
2
VIEW W–W
3
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10
INCHES
MIN
MAX
0.340
0.380
0.380
0.405
0.160
0.190
0.020
0.035
0.045
0.055
0.310
0.350
0.100 BSC
0.080
0.110
0.018
0.025
0.090
0.110
0.052
0.072
0.280
0.320
0.197 REF
0.079 REF
0.039 REF
0.575
0.625
0.045
0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65
10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60
15.88
1.14
1.40
GATE
COLLECTOR
EMITTER
COLLECTOR
MGP15N40CL, MGB15N40CL
Notes
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11
MGP15N40CL, MGB15N40CL
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
http://onsemi.com
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