Filtronic FPD2000AS 2w packaged power phemt Datasheet

FPD2000AS
Datasheet v3.0
2W PACKAGED POWER PHEMT
FEATURES:
•
•
•
•
•
•
•
PACKAGE:
33 dBm Output Power (P1dB) @1.8GHz
14 dB Power Gain (G1dB) @1.8GHz
46 dBm Output IP3
10V Operation
50% Power-Added Efficiency
Evaluation Boards Available
Usable Gain to 4GHz
TYPICAL APPLICATIONS:
GENERAL DESCRIPTION:
•
The FPD2000AS is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron
Mobility
Transistor
(pHEMT),
optimized for power applications in L-Band.
The surface-mount package has been
optimized for low parasitics.
•
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
Power applications in WLL/WLAN and
WiMax (3.5GHz) amplifiers
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
32
33
12.5
14.0
MAX
UNITS
VDS = 10V; IDS = 350 mA
Power at 1dB Gain Compression
P1dB
ΓS and ΓL tuned for Optimum IP3
dBm
VDS = 10V; IDS = 350 mA
Power Gain at dB Gain Compression
G1dB
ΓS and ΓL tuned for Optimum IP3
VDS = 10 V; IDS = 350 mA
Maximum Stable Gain
MSG
S21/S12
20
dB
45
%
-47
dBc
PIN = 0dBm, 50Ω system
VDS = 10V; IDS = 350 mA
Power-Added Efficiency
PAE
at 1dB Gain Compression
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 350 mA
3rd-Order Intermodulation Distortion
IM3
ΓS and ΓL tuned for Optimum IP3
POUT = 22 dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
1150
mA
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
1800
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
1200
mS
Gate-Source Leakage Current
IGSO
VGS = -3 V
35
85
µA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 4 mA
0.7
0.9
1.4
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 4 mA
6
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 4 mA
20
V
Thermal Resistance (channel-to-case)
ΘCC
See Note on following page
20
°C/W
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2000AS
Datasheet v3.0
1
ABSOLUTE MAXIMUM RATING :
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
7
Drain-Source Voltage
VDS
-3V < VGS < -0.5V
12V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3V
Drain-Source Current
IDS
For VDS < 2V
IDSS
Gate Current
IG
Forward / reverse current
+15/-2mA
RF Input Power
PIN
Under any acceptable bias state
29.5dBm
Channel Operating Temperature
TCH
Under any acceptable bias state
175°C
Storage Temperature
TSTG
Non-Operating Storage
-40°C to 150°C
PTOT
See De-Rating Note below
7.6W
2
3
Total Power Dissipation
Notes:
1
TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device; Users should avoid exceeding 80% of 2 or more Limits simultaneously
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 7.6 - (0.05W/°C) x TPACK
where TPACK= source tab lead temperature above 22°C
(Coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55°C carrier temperature: PTOT = 7.6W – (0.05 x (55 – 22)) = 5.95W
5
For optimum heat sinking, metal-filled through (Source) via holes should be used directly below the central
metallized ground pad on the bottom of the package
6
Thermal Resistivity: The nominal value of 20°C/W is measured with the package mounted on a large heatsink
with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the
Source leads
7
Operating at absolute maximum VD continuously is not recommended. If operation is considered then IDS must
be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted
to <-0.5V.
BIASING GUIDELINES:
•
•
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices such as the FPD2000AS.
The recommended 350mA bias point is nominally a Class AB mode. A small amount of RF gain
expansion prior to the onset of compression is normal for this operating point.
RECOMMENDED OPERATING BIAS CONDITIONS:
•
•
Drain-Source Voltage:
Quiescent Current:
From 5V to 10V
From 25% IDSS to 55% IDSS
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2000AS
Datasheet v3.0
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated (VDS=10V, IDS=350mA, f=1800MHz)
3.00
30.00
2.50
28.00
2.00
26.00
Pout
1.50
Comp Point
24.00
1.00
70.00%
70.00%
60.00%
60.00%
50.00%
40.00%
30.00%
30.00%
20.00%
10.00%
22.00
.50
20.00
.00
10.00%
6.00
8.00
10.00
12.00
14.00
16.00
18.00
-.50
22.00
20.00
Eff.
40.00%
20.00%
18.00
4.00
50.00%
PAE
PAE (%)
32.00
.00%
6.00
8.00
10.00
12.00
14.00
Input Power (dBm)
16.00
18.00
20.00
Drain Efficiency (%)
Drain Efficiency and PAE
3.50
Gain Compression (dB)
Output Power (dBm)
Power Transfer Characteristic
34.00
.00%
24.00
22.00
Input Power (dBm)
IMProductsvs. Input Power
FPD2000AS I-V Curves
-20.00
27.00
1.400
-25.00
VGS = 0V
1.200
Im3, dBc
-35.00
-40.00
-45.00
21.00
IM Products (dBc)
-50.00
19.00
5.00
7.00
9.00
11.00
VGS = -0.50V
.600
VGS = -0.75V
.400
VGS = -1.0V
VGS = -1.25V
.000
0.00
-60.00
13.00
1.00
2.00
5.00
6.00
7.00
0. 8
Swp Max
244
Swp Max
181
0
Pout_dBm = 22 dBm
2.0
IP3_dBm = 42 dBm
0 .4
0 .4
IP3_dBm = 50 dBm
3.
3.0
4.0
5.0
IP3_dBm = 40 dBm
5.0
0 .2
IP3_dBm = 52 dBm
0
0 .2
4 .0
Pout_dBm = 32 dBm
10 .0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
Pout_dBm = 34 dBm
0.4
0.2
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10 .0
0
8.00
2.
0.6
IP3_dBm = 44 dBm
0 .6
1.0
4.00
FPD2000AS POWER CONTOURS 2 GHz
FPD2000AS IP3 CONTOURS 2 GHz
0.8
3.00
Drain-Source Voltage (V)
Input Power(dBm)
0.6
3.00
VGS = -0.25V
.800
.200
-55.00
17.00
1.000
1.0
Output Power (dBm)
Pout
23.00
Drain-Source Current (A)
-30.00
25.00
IP3_dBm = 48 dBm
-10 .0
-1 0.0
Pout_dBm = 30 dBm
-0 .2
-5 .0
-0.2
-5 .0
-4 .0
-4 .0
Pout_dBm = 28 dBm
.0
-2
Pout_dBm = 26 dBm
-0 .8
-1.0
-0 .8
-0.6
4
Swp Min
1
-1.0
.
-0
.0
-2
4
-0 .6
-3.
0
.
-0
-3
.0
IP3_dBm = 46 dBm
Pout_dBm = 24 dBm
Swp Min
1
NOTE: Power contours measured at
constant input power, level set to meet
nominal P1dB rating at optimum match
point. Optimum match:
ΓS = 3 – j6 Ω and ΓL = 11 – j3 Ω
NOTE: IP3 contours generated with PIN =
11dB back-off from P1dB. Local maxima for best
linearity located at:
ΓL = 15 + j4.5 Ω and ΓL = 28 – j25 Ω
with ΓS = 9.5 - j4 Ω
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2000AS
Datasheet v3.0
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated (VDS=10V, IDS=200mA)
FPD2000AS at VDS = 10V and IDS = 350mA
FPD2000AS at VDS = 10V and IDS = 350mA
40
30.0
35
25.0
Power (dBm) or Gain (dB)
30
Gain
20.0
15.0
S21
MSG
10.0
P1dB
25
G1dB
20
15
10
5.0
5
0
500
0.0
0
500
1000
1500
2000
2500
3000
3500
4000
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
AS PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT:
(dimensions in millimeters – mm)
3.8
0.35
2 Plcs.
0 to 0.3
4 Plcs.
0.35
2 Plcs.
0.5
2 Plcs.
3.8
4.4
2.2±0.25
1.9±0.25
1.3
2 Plcs.
3.2
0.15
1.5
Epoxy Fillet
All Dimnesions in mm
General Tolerance: .xx ± 0.05 .x ± 0.15
For best positional accuracy in auto pick and place
device should be referenced directly from the leads
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
4000
FPD2000AS
Datasheet v3.0
REFERENCE DESIGN (3.4 – 3.5GHZ):
PARAMETER
UNIT
PERFORMANCE
Frequency
GHz
3.4 to 3.5
Gain
dB
10
P1dB
dBm
33
IM3 @22dBm Pout SCL
dBc
-45dBc
S11
dB
-6
S22
dB
-15
Vd
V
10
Vg
V
-0.6 to -0.9
Id
mA
350
SCHEMATIC:
Vd
-Vg
1.0uF
1.0uF
FPD2000AS EVAL Board
Schematic
10pF
10pF
20 Ohm
Z16
Z10
Z15
Z9
15pF
1
RF IN
(50 Ohm)
Z5
Z1
2
4
1
3
Z2
Z1
Z3
2
4
1
3
Z4
Z5
Z14
Z8
Z6
2
4
1
Z12
3
Z7
Z11
2
4
15pF
3
Z13 Z17
Z18
Z19
RF OUT
(50 Ohm)
Z14
Z8
Desc.
Value
0.050" x 1.000" Microstrip
Z1
W1=0.020" W2=0.050" W3=0.020" W4=0.050" Microstrip Cross
Z2
0.020" x 0.100" Microstrip
Z3
W1=0.020" W2=0.050" W3=0.020" W4=0.050" Microstrip Cross
Z4
0.050" x 0.100" Microstrip
Z5
0.020" x 0.440" Microstrip
Z6
W1=0.020" W2=0.085" W3=0.020" W4=0.085" Microstrip Cross
Z7
0.085" x 0.254" Microstrip
Z8
0.015" x 0.296" Microstrip
Z9
0.360" x 90° Microstrip Radial Stub
Z10
0.420" x 90° Microstrip Radial Stub
Z16
Z11, Z12 0.040" x 0.040" Microstrip
W1=0.090" W2=0.200" W3=0.090" W4=0.200" Microstrip Cross
Z13
0.200" x 0.100" Microstrip
Z14
0.015" x 0.450" Microstrip
Z15
0.090" x 0.190" Microstrip
Z17
0.140" x 0.480" Microstrip
Z18
0.050" x 0.100" Microstrip
Z19
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2000AS
Datasheet v3.0
BOARD LAYOUT (3.4 – 3.5GHZ):
VD
RF IN
EV-SP-000044-001
NOTE: AutoCAD™ drawing available on request
6
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2000AS
Datasheet v3.0
S-PARAMETERS:
Note: Biased @ 10V, 350mA
FREQ-GHZ
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
4.10
4.20
4.30
4.40
4.50
4.60
4.70
4.80
4.90
5.00
S11MAG
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.89
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.88
0.87
0.87
0.87
0.86
0.86
0.86
0.86
0.85
0.85
0.85
0.85
0.85
0.85
S11ANG
-151.40
-158.58
-164.23
-168.91
-172.86
-176.35
-179.44
177.74
175.11
172.67
170.35
168.17
166.09
164.11
162.17
160.30
158.48
156.67
155.01
153.30
151.64
150.05
148.54
147.00
145.28
143.93
142.45
141.02
139.58
138.21
136.87
135.65
134.47
129.67
127.78
125.78
123.84
121.77
119.75
117.52
115.54
113.68
111.67
109.46
107.26
105.01
S21MAG
12.52
10.57
9.14
8.06
7.20
6.51
5.93
5.45
5.05
4.70
4.40
4.13
3.89
3.69
3.50
3.34
3.19
3.05
2.93
2.81
2.71
2.61
2.52
2.44
2.36
2.29
2.23
2.16
2.11
2.05
2.00
1.95
1.90
1.94
1.91
1.88
1.84
1.81
1.79
1.76
1.74
1.71
1.69
1.67
1.65
1.63
S21ANG
96.06
91.14
86.95
83.20
79.78
76.60
73.62
70.77
68.02
65.34
62.72
60.18
57.70
55.24
52.76
50.37
48.01
45.65
43.35
41.02
38.72
36.43
34.20
31.95
29.69
27.42
25.22
23.03
20.81
18.59
16.40
14.24
12.24
8.92
6.50
3.95
1.48
-0.89
-3.25
-5.69
-8.29
-10.69
-13.07
-15.55
-18.04
-20.54
S12MAG
0.02
0.02
0.02
0.02
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
S12ANG
23.09
21.17
20.24
19.30
18.90
18.57
18.50
18.46
18.41
18.34
18.30
18.25
18.34
18.22
18.00
18.00
18.01
17.70
17.42
17.44
16.81
16.69
16.42
16.22
15.56
15.49
14.94
14.53
14.10
13.33
12.89
12.15
11.80
10.05
9.06
7.84
6.72
5.60
4.45
3.33
2.14
1.05
-0.20
-1.36
-2.60
-3.94
S22MAG
0.41
0.41
0.42
0.42
0.42
0.42
0.42
0.42
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.43
0.42
0.42
0.42
0.42
0.42
0.42
0.41
0.41
0.41
0.41
0.41
0.41
0.41
S22ANG
-163.97
-168.16
-171.39
-174.09
-176.33
-178.37
179.80
178.18
176.66
175.27
173.92
172.69
171.34
170.15
168.95
167.90
166.84
165.65
164.73
163.72
162.73
161.59
160.71
159.70
158.58
157.76
156.78
155.89
154.94
154.07
153.19
152.58
151.58
148.11
146.79
145.39
143.97
142.63
141.09
139.29
137.87
136.50
135.06
133.46
131.82
130.21
7
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2000AS
Datasheet v3.0
S-PARAMETERS (CONT.):
Note: Biased @ 10V, 350mA
FREQ-GHZ
5.10
5.20
5.30
5.40
5.50
5.60
5.70
5.80
5.90
6.00
6.10
6.20
6.30
6.40
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
7.40
7.50
7.60
7.70
7.80
7.90
8.00
8.10
8.20
8.30
8.40
8.50
8.60
8.70
8.80
8.90
9.00
9.10
9.20
9.30
9.40
9.50
9.60
9.70
9.80
9.90
10.00
S11MAG
0.85
0.85
0.84
0.84
0.84
0.84
0.84
0.84
0.84
0.83
0.83
0.83
0.83
0.83
0.83
0.83
0.82
0.82
0.83
0.83
0.83
0.83
0.83
0.83
0.83
0.83
0.83
0.83
0.84
0.84
0.84
0.84
0.84
0.84
0.84
0.84
0.84
0.84
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
S11ANG
102.67
100.31
97.99
95.60
93.23
90.81
88.26
85.69
83.17
80.66
78.11
75.46
72.84
70.23
67.48
64.77
62.13
59.92
57.56
54.88
52.08
49.37
46.66
44.02
41.53
38.88
36.18
33.64
31.05
28.44
25.95
23.49
21.07
18.55
16.14
13.74
11.39
8.95
6.61
4.26
1.89
-0.35
-2.77
-5.00
-7.40
-9.69
-12.14
-14.66
-17.20
-19.62
S21MAG
1.61
1.59
1.58
1.56
1.54
1.52
1.50
1.49
1.47
1.45
1.44
1.42
1.40
1.39
1.37
1.35
1.33
1.32
1.32
1.31
1.29
1.28
1.26
1.24
1.23
1.22
1.20
1.19
1.17
1.16
1.15
1.13
1.12
1.11
1.09
1.08
1.07
1.06
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.97
0.96
0.95
0.94
S21ANG
-23.07
-25.68
-28.24
-30.82
-33.39
-36.00
-38.59
-41.22
-43.83
-46.44
-49.07
-51.79
-54.48
-57.14
-59.81
-62.42
-64.76
-66.68
-69.52
-72.55
-75.44
-78.19
-80.88
-83.44
-86.01
-88.90
-91.67
-94.33
-97.01
-99.67
-102.28
-104.88
-107.55
-110.22
-112.79
-115.39
-117.96
-120.52
-123.07
-125.62
-128.14
-130.70
-133.36
-135.96
-138.56
-141.19
-143.84
-146.52
-149.12
-151.71
S12MAG
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.14
0.14
0.14
0.14
0.14
0.14
0.15
0.15
0.15
0.15
S12ANG
-5.34
-6.87
-8.40
-9.89
-11.46
-12.98
-14.50
-16.11
-17.66
-19.28
-21.12
-23.29
-25.03
-26.82
-28.64
-30.28
-31.41
-30.95
-32.92
-35.78
-38.26
-40.46
-42.52
-44.17
-45.73
-48.21
-50.47
-52.59
-54.72
-56.85
-58.91
-60.91
-62.95
-65.03
-66.97
-68.91
-70.86
-72.85
-74.90
-76.87
-78.87
-80.90
-83.07
-85.21
-87.34
-89.56
-91.85
-94.12
-96.23
-98.00
S22MAG
0.41
0.41
0.41
0.41
0.41
0.40
0.41
0.41
0.41
0.41
0.41
0.41
0.41
0.41
0.41
0.41
0.41
0.40
0.41
0.42
0.42
0.42
0.43
0.43
0.43
0.43
0.44
0.44
0.44
0.44
0.45
0.45
0.45
0.45
0.46
0.46
0.46
0.46
0.46
0.46
0.46
0.47
0.47
0.47
0.47
0.47
0.47
0.47
0.48
0.48
S22ANG
128.50
126.81
125.07
123.35
121.57
119.83
117.91
116.04
114.18
112.34
110.62
108.63
106.57
104.45
102.37
100.18
98.06
97.13
96.12
94.11
91.84
89.62
87.37
85.28
83.74
81.63
79.39
77.14
74.97
72.73
70.54
68.43
66.26
64.01
61.79
59.50
57.23
55.01
52.71
50.40
48.10
45.92
43.66
41.26
38.92
36.40
33.98
31.53
29.14
26.66
8
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2000AS
Datasheet v3.0
TAPE AND REEL DIMENSIONS AND PART ORIENTATION
f xxx
xxx
PACKAGE MARKING CODE
Example:
f1ZD
P2F
f = Filtronic
1ZD = Lot / Date Code
P2F = Status, Part Code, Part
Type
Parts per reel 178mm = 1000
330mm = 2500
9
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD2000AS
Datasheet v3.0
PREFERRED ASSEMBLY INSTRUCTIONS:
ORDERING INFORMATION:
This package is compatible with both lead free
and leaded solder reflow processes as defined
within IPC/JEDEC J-STD-020C. The maximum
package temperature should not exceed
260°C. Package leads are gold plated.
PART NUMBER
DESCRIPTION
FPD2000AS
Packaged pHEMT
FPD2000AS-EB
Packaged pHEMT evaluation board
EB-2000AS-AB (880MHz)
EB-2000AS-AA (1.85GHz)
HANDLING PRECAUTIONS:
EB-2000AS-AD (2.14GHz)
EB-2000AS-AE (2.4GHz)
To avoid damage to
the devices care
should be exercised
during handling.
Proper Electrostatic Discharge (ESD)
precautions should be observed at all stages
of storage, handling, assembly, and testing.
EB-2000AS-AF (2.44GHz)
EB-2000AS-AG (2.5 to 2.7GHz)
EB-2000AS-AH (3.5GHz)
ESD/MSL RATING:
These devices should be treated as Class 1A
(250-500 V) using the human body model as
defined in JEDEC Standard No. 22-A114.
Further information on ESD control measures
can be found in MIL-STD-1686 and MILHDBK-263.
The device has a MSL rating of Level 1. To
determine this rating, preconditioning was
performed to the device per, the Pb-free solder
profile defined within IPC/JEDEC J-STD-020C,
Moisture / Reflow sensitivity classification for
non-hermatic solid state surface mount devices
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise parameters and device
model are available on request.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
10
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com