SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=35A. Zener Voltage : 21V(Typ.) POLARITY E35A21VBS (+ Type) E35A21VBR (- Type) K H MAXIMUM RATING (Ta=25 CHARACTERISTIC ) E I SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 300 (60Hz) A Non-Repetitive Peak Reverse Surge Current (10mS) IRSM 42 A Transient Peak Reverse Voltage VRSM 19 V Peak Reverse Voltage VRM 16 V Junction Temperature Tj -40 215 Tstg -40 215 Storage Temperature Range MILLIMETERS Φ11.5 MAX Φ12.75+0.09-0.00 _ 0.04 Φ1.3 + _ 0.2 4.2+ _ 0.2 8.0 + TYP 0.5 _ 0.2 Φ10.0 + _ 0.1x45 0.4+ 8.5 MAX 0.2+0.1 _ 0.5 28.35+ J D F G B B-PF ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC DIM A B C D E F G H I J K ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VF IFM=100A - - 1.10 V Zener Voltage VZ IZ=10mA 19 21 23 V Reverse Current IR VR=18V - - 0.3 A IFM=100A, IM=100mA, Pw=100mS - - 70 mV Irsm=42A, Pw=10mS - - 32 V IZ=10mA - 15.7 - HIR Ta=150 , VR=18V - - 100 A Rth DC total junction to case - - 0.8 /W VF Transient Thermal Resistance Vbr Breakdown Voltage Temperature Coefficient T Reverse Leakage Current Under High Temperature Temperature Resistance 2004. 8. 10 Revision No : 5 mV/ 1/1