ESH2B, ESH2C & ESH2D New Product Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifiers Major Ratings and Characteristics IF(AV) 2A VRRM 100 V, 150 V, 200 V trr 25 ns VF 0.93 V TJ max. 175 °C DO-214AA (SMB) Features Mechanical Data • • • • • • • Case: DO-214AA (SMB) Epoxy meets UL 94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end Glass passivated chip junction Ideal for automated placement Ultrafast recovery times for high efficiency Low forward voltage, low power loss High forward surge capability Meets MSL level 1 per J-STS-020C Solder Dip 260 °C, 40 seconds Typical Applications For use in high frequency rectification and freewheeling application in switching mode converter and inverter for both consumer and automotive Maximum Ratings TA = 25 °C, unless otherwise specified Parameter Symbol Device marking code Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage ESH2B ESH2C ESH2D EHB EHC EHD 100 150 200 Unit V VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current (Fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 60 A TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range Document Number 84649 17-Oct-05 www.vishay.com 1 ESH2B, ESH2C & ESH2D Vishay General Semiconductor Electrical Characteristics TA = 25 °C, unless otherwise specified Symbol Value Unit Maximum instantaneous forward voltage Parameter at IF = 2 A(1) Test condition VF 0.93 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C TA = 125 °C IR 2.0 50 µA Maximum reverse recovery time at IF = 0.5 A, IR = 1 A, Irr = 0.25 A trr 25 ns Typical reverse recovery time at IF = 2 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C TJ = 100 °C trr 35 55 ns Typical stored charge at IF = 2 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C TJ = 100 °C Qrr 20 35 nC Typical junction capacitance at 4.0 V, 1 MHz CJ 30 pF Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle Thermal Characteristics TA = 25 °C, unless otherwise specified Parameter Typical thermal Symbol ESH2B RθJA RθJL resistance(1) ESH2C ESH2D 65 20 Unit °C/W Note: (1) Units mounted on P.C.B. with 8.0 x 8.0 mm land areas. Ratings and Characteristics Curves 2.5 60 Peak Forward Surge Current (A) Average Forward Rectified Current (A) (TA = 25 °C unless otherwise specified) 2 1.5 1 0.5 0 40 30 20 10 0 0 25 50 75 100 125 150 175 Lead Temperature (°C) Figure 1. Maximum Forward Current Derating Curve www.vishay.com 2 50 1 10 100 Number of Cycles at 60 Hz Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 84649 17-Oct-05 ESH2B, ESH2C & ESH2D Vishay General Semiconductor 100 TJ = 175 °C 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C 0.1 10 1 0.01 0.2 0.4 0.6 0.8 1 1.2 0.1 1.4 1 Figure 3. Typical Instantaneous Forward Characteristics 100 Figure 5. Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 1000 Instantaneous Reverse Leakage Current (µA) 10 Reverse Voltage (V) Instantaneous Forward Voltage (V) TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 1 0.01 0.01 20 40 60 80 10 100 0.1 1 10 100 tp-Pulse Duration (sec.) Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Figure 6. Typical Transient Thermal Impedance Package dimensions in inches (millimeters) DO-214AA (SMB) Mounting Pad Layout Cathode Band 0.085 MAX. (2.159 MAX.) 0.086 (2.20) 0.155 (3.94) 0.130 (3.30) 0.077 (1.95) 0.086 MIN. (2.18 MIN.) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 MIN. (1.52 MIN.) 0.220 REF 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.008 (0.2) 0 (0) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) Document Number 84649 17-Oct-05 www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1