HBM31PT CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 3.0 Amperes HBM38PT FEATURES * * * * * For surface mounted applications Low forward voltage, high current capability Low leakage current Metallurgically bonded construction Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated junction * High temperature soldering guaranteed : 260oC/10 seconds at terminals SMB 0.083 (2.11) 0.077 (1.96) 0.155 (3.94) 0.130 (3.30) (1) (2) 0.190 (4.75) MECHANICAL DATA 0.160 (4.06) Case: JEDEC SMB molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Weight: 0.003 ounces, 0.093 gram 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 HZ, resistive or inductive load. For capacitive load, derate current by 20%. SMB Dimensions in inches and (millimeters) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL HBM31PT HBM32PT HBM33PT HBM34PT HBM35PT HBM36PT HBM37PT HBM38PT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 Volts o Maximum Average Forward Rectified Current TL = 90 C IO 3.0 Amps IFSM 90 Amps Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range CJ 70 TJ, TSTG 50 pF o -65 to +150 C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL Maximum Instantaneous Forward Voltage at 3.0 A DC Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25oC Maximum Full Load Reverse Current Average, Full Cycle at TA = 55oC Maximum Reverse Recovery Time (Note 2) NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts 2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A VF HBM31PT HBM32PTHBM33PT HBM34PT HBM35PT HBM36PT HBM37PT HBM38PT 1.0 1.3 1.5 1.7 UNITS Volts 5.0 uAmps 100 uAmps IR trr 50 70 nSec 2002-5 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) D.U.T (+) 0 PULSE GENERATOR (NOTE 2) 25 Vdc (approx) (-) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) -0.25A (+) -1.0A 1cm NOTES: 1. Rise Time = 7 ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10 ns max. Source Impedlance= 50 ohms. SET TIME BASE FOR 10/20 nS/cm FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 2.5 2.0 1.5 Single Phase Half Wave 60Hz Resistive or Inductive Load 1.0 0.5 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE ( OC ) 10 TJ =100oC TJ =25oC 1.0 0.1 0 20 40 60 80 100 120 20 0 T M3 T~ M3 7P HB HB M3 6P T 8P T 35P BM BM HB 1.8 FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, ( pF ) 40 ~H .2 .4 .6 .8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, ( V ) 200 60 33P T 0 120 80 ~H TJ =25oC .01 .001 140 8.3ms Single Half Sine-Wave (JEDEC Method) M3 0.1 FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 100 4PT 1.0 HB TJ =125 C Pulse Width = 300uS 1% Duty Cycle 1PT o M3 100 HB INSTANTANEOUS FORWARD CURRENT, ( A ) INSTANTANEOUS REVERSE CURRENT, (uA) 3.0 10 PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % ) PEAK FORWARD SURGE CURRENT, ( A ) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 .01 AVERAGE FORWARD CURRENT, ( A ) RATING CHARACTERISTIC CURVES ( HBM31PT THRU HBM38PT ) HBM 31PT 100 60 ~HBM 35PT HBM3 6PT~ 40 HBM3 8PT 20 10 6 4 TJ =25oC 2 1 1 2 5 10 20 NUMBER OF CYCLES AT 60 Hz 50 100 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 100