AVD004F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG(B) A DESCRIPTION: .100 X 45° ØD .088 x 45° CHAMFER The ASI AVD004F is Designed for C B FEATURES: • • • Omnigold™ Metalization System E F G H I MAXIMUM RATINGS 650 mA PEAK IC 32 V VCB PDISS 18 W PEAK TSTG -65 OC to +150 OC θ JC 5.0 OC/W CHARACTERISTICS SYMBOL inches / mm inches / mm .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 .255 / 6.48 C .245 / 6.22 D .120 / 3.05 .140 / 3.56 E .552 / 14.02 .572 / 14.53 F .790 / 20.07 .810 / 20.57 .285 / 7.24 H .003 / 0.08 .007 / 0.18 I .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 .210 / 5.33 K ORDER CODE: ASI10554 O NONETEST CONDITIONS IC = 1 mA BVCER IC = 5 mA BVEBO IE = 1 mA ICES VCE = 28 V hFE VCE = 5.0 V ηC MAXIMUM MINIMUM A TC = 25 C BVCBO PG K DIM G -65 OC to +200 OC TJ J VCC = 28 V RBE = 10 Ω IC = 200 mA POUT = 4.0 W f = 1025 - 1150 MHz MINIMUM TYPICAL MAXIMUM UNITS 45 V 45 V 3.5 V 30 1.0 mA 300 --- 9.0 Db 35 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1