Fairchild EGF1A 1.0 ampere high efficiency glass passivated rectifier Datasheet

EGF1A - EGF1D
EGF1A - EGF1D
0.181 (4.597)
0.157 (3.988)
Features
•
•
•
0.062 (1.575)
0.055 (1.397)
Low forward voltage drop.
Low profile package.
Fast switching for high efficiency.
2
3.93
3.73
1.67
1.47
0.114 (2.896)
0.098 (2.489)
1
0.208 (5.283)
0.188 (4.775)
+
SMA/DO-214AC
0.096 (2.438)
0.078 (1.981)
COLOR BAND DENOTES CATHODE
2.38
2.18
5.49
5.29
0.060 (1.524)
0.030 (0.762)
Minimum Recommended
Land Pattern
0.008 (0.203)
0.002 (0.051)
0.012 (0.305)
0.006 (0.152)
1.0 Ampere High Efficiency Glass Passivated Rectifier
Absolute Maximum Ratings*
Symbol
IO
TA = 25°C unless otherwise noted
Parameter
Value
Units
1.0
A
30
A
2.0
13
85
W
mW/°C
°C/W
RθJA
Average Rectified Current
@ T L = 100°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
RθJC
Thermal Resistance, Junction to Case **
30
°C/W
Tstg
Storage Temperature Range
-65 to +175
°C
TJ
Operating Junction Temperature
-65 to +175
°C
if(surge)
PD
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
1A
1B
1C
1D
Peak Repetitive Reverse Voltage
50
100
150
200
V
Maximum RMS Voltage
35
70
105
140
V
DC Reverse Voltage
(Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage @ 1.0 A
50
100
150
200
V
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
1998 Fairchild Semiconductor Corporation
10
100
1.0
µA
µA
V
50
ns
15
pF
EGF1A-EGF1D, Rev. B
EGF1A - EGF1D
Typical Characteristics
Forward Characteristics
Forward Current Derating Curve
100
1.4
FORWARD CURRENT (A)
FORWARD CURRENT (A)
1.6
1.2
1
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
0.8
0.6
0.4
TA
J = 25º C
Pulse Width = 300µS
2% Duty Cycle
10
1
0.1
0.2
0
0
25
50
75
100
125
LEAD TEMPERATURE ( º C)
150
0.01
0.2
175
1.4
1.6
1000
REVERSE CURRENT ( µ A)
PEAK FORWARD SURGE CURRENT (A)
0.6
0.8
1
1.2
FORWARD VOLTAGE (V)
Reverse Characteristics
Non-Repetitive Surge Current
40
30
20
10
0
0.4
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
T A = 100º C
100
10
TA
J = 25º C
1
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Typical Junction Capacitance
JUNCTION CAPACITANCE (pF)
60
50
40
30
20
10
0
0.1
50Ω
NONINDUCTIVE
0.5 1 2
5 10 20 50 100
REVERSE VOLTAGE (V)
50Ω
NONINDUCTIVE
+0.5A
500
trr
(-)
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
0
-0.25A
(+)
OSCILLOSCOPE
(Note 1)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
EGF1A-EGF1D, Rev. B
SMA/DO-214AC Package Dimensions
SMA/DO-214AC (FS PKG Code P5)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.064
0.181 (4.597)
0.157 (3.988)
3.93
3.73
0.062 (1.575)
0.055 (1.397)
2
1
0.114 (2.896)
0.098 (2.489)
0.208 (5.283)
0.188 (4.775)
0.008 (0.203)
0.002 (0.051)
+
2.38
2.18
5.49
5.29
0.096 (2.438)
0.078 (1.981)
0.060 (1.524)
0.030 (0.762)
1.67
1.47
Minimum Recommended
Land Pattern
0.012 (0.305)
0.006 (0.152)
August 1999, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench 
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
Similar pages