FGPF4533 330V, PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A • High input impedance • Fast switching • RoHS compliant Applications • PDP System GC E TO-220F (Retractable) Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage ± 30 V IC pulse(1)* Collector Current @ TC = 25oC 200 A Maximum Power Dissipation @ TC = 25oC 28.4 W Maximum Power Dissipation o PD @ TC = 100 C 11.4 Operating Junction Temperature TJ Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o C -55 to +150 o C 300 o C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. Max. - 4.4 o C/W 62.5 o C/W - Units Notes: (1) Half Sine Wave, D < 0.01, pluse width < 5μsec * Ic_pluse limited by max Tj ©2010 Fairchild Semiconductor Corporation FGPF4533 Rev. B 1 www.fairchildsemi.com FGPF4533 330V, PDP Trench IGBT August 2010 Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGPF4533 FGPF4533TU TO-220F Tube 50ea - Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 330 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250μA - 0.3 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 100 μA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250μA, VCE = VGE 2.4 3.3 4.0 V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V - 1.15 - V IC = 50A, VGE = 15V, TC = 25oC - 1.55 1.8 V IC = 50A, VGE = 15V, TC = 125oC - 1.6 - V - 1294 - pF - 57 - pF - 41 - pF - 6 - ns - 22 - ns - 40 - ns - 220 - ns - 6 - ns - 24 - ns - 42 - ns - 277 - ns - 44 - nC - 6 - nC - 14 - nC Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGPF4533 Rev. B VCC = 200V, IC = 20A RG = 5Ω, VGE = 15V Resistive Load, TC = 25oC VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 20A VGE = 15V 2 www.fairchildsemi.com FGPF4533 330V, PDP Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 200 200 o TC = 25 C 20V 12V o 10V TC = 125 C 150 VGE = 8V 100 50 150 VGE = 8V 100 50 0 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 Figure 3. Typical Saturation Voltage Characteristics 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 200 Common Emitter VCE = 10V Common Emitter VGE = 15V Collector Current, IC [A] Collector Current, IC [A] o TC = 25 C 150 o TC = 125 C 100 50 o TC = 25 C 150 o TC = 125 C 100 50 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 20 Common Emitter Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 1.6 50A 1.5 1.4 30A 1.3 1.2 IC = 20A 1.1 1.0 2 Figure 6. Saturation Voltage vs. VGE 1.7 Collector-Emitter Voltage, VCE [V] 6 Figure 4. Transfer Characteristics 200 FGPF4533 Rev. B 12V 15V 10V Collector Current, IC [A] Collector Current, IC [A] 15V 20V 0 o TC = 25 C 16 12 50A 8 4 0 20 40 60 80 100 120 140 o Collector-EmitterCase Temperature, TC [ C] 3 30A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGPF4533 330V, PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 2400 Common Emitter Common Emitter VGE = 0V, f = 1MHz o Collector-Emitter Voltage, VCE [V] TC = 125 C 2000 16 o Capacitance [pF] TC = 25 C 12 50A 8 30A 1600 Cies 1200 800 4 0 0 Coes 400 IC = 20A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 0.1 20 Figure 9. Gate charge Characteristics Cres 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 500 15 Common Emitter 100 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o TC = 25 C 12 VCC = 100V 9 200V 6 3 0 0 15 30 Gate Charge, Qg [nC] 10μs 100μs 1ms 10 ms 10 DC 1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 45 Figure 11. Turn-on Characteristics vs. Gate Resistance 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 1000 100 Switching Time [ns] Switching Time [ns] tf tr 10 Common Emitter VCC = 200V, VGE = 15V IC = 20A td(on) 100 Common Emitter VCC = 200V, VGE = 15V IC = 20A td(off) o o TC = 25 C TC = 25 C o o TC = 125 C 1 TC = 125 C 10 0 10 20 30 40 0 50 FGPF4533 Rev. B 10 20 30 40 50 Gate Resistance, RG [Ω ] Gate Resistance, RG [Ω] 4 www.fairchildsemi.com FGPF4533 330V, PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 400 100 10 tf Switching Time [ns] Switching Time [ns] tr td(on) Common Emitter VGE = 15V, RG = 5Ω 100 Common Emitter VGE = 15V, RG = 5Ω o o TC = 25 C TC = 25 C o o TC = 125 C 1 10 20 30 td(off) 40 TC = 125 C 10 10 50 Collector Current, IC [A] 20 30 40 50 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current 1000 5000 Common Emitter VCC = 200V, VGE = 15V IC = 20A Eoff o TC = 25 C o TC = 125 C Switching Loss [uJ] Switching Loss [uJ] 1000 Eoff 100 Eon 100 Eon 10 Common Emitter VGE = 15V, RG = 5Ω o TC = 25 C o TC = 125 C 10 0 10 20 30 40 1 10 50 Gate Resistance, RG [Ω] 20 30 40 50 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics 500 Collector Current, IC [A] 100 10 1 Safe Operating Area o VGE = 15V, TC = 125 C 0.1 1 10 100 500 Collector-Emitter Voltage, VCE [V] FGPF4533 Rev. B 5 www.fairchildsemi.com FGPF4533 330V, PDP Trench IGBT Typical Performance Characteristics FGPF4533 330V, PDP Trench IGBT Typical Performance Characteristics Figure 18.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 8 0.5 1 0.2 0.1 0.05 PDM 0.1 0.02 t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] FGPF4533 Rev. B 6 www.fairchildsemi.com FGPF4533 330V, PDP Trench IGBT Package Dimensions TO-220F (Retractable) * Front/Back Side Isolation Voltage : AC 2700V Dimensions in Millimeters FGPF4533 Rev. B 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FGPF4533 Rev. B 8 www.fairchildsemi.com FGPF4533 330V, 50A PDP Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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