AP3D2R6CMT Halogen-Free Product Advanced Power Electronics Corp. ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 ▼ Simple Drive Requirement ▼ Easy for DC/DC Buck CH-1 G1 Converter Application ▼ RoHS Compliant & Halogen-Free CH-2 D2/S1 BVDSS 30V RDS(ON) 8.2mΩ BVDSS RDS(ON) 30V 2.4mΩ G2 Description S2 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. D2/S1 G2 G2 D2/S1 D2/S1 D2/S1 S2 The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters. The package provide optimal efficiency with low stray inductance and very low onresistance. G1 D2/S1 D1 D1 D1 G1 D2/S1 D1 D1 . PMPAK® 5x6 PMPAK 5x6 o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter Units Rating CH-1 CH-2 VDS Drain-Source Voltage 30 30 V VGS Gate-Source Voltage +20 / -12 +20 / -12 V ID@TC=25℃ Drain Current (Silicon Limited) 42 100 A 3 ID@TA=25℃ Drain Current , VGS @ 10V 12.2 24.3 A ID@TA=70℃ 3 9.8 19.4 A 40 75 A 2.08 2.27 W Drain Current , VGS @ 10V Pulsed Drain Current IDM 1 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rating Parameter CH-1 CH-2 Units Rthj-c Maximum Thermal Resistance, Junction-case 5 3 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient3 60 55 ℃/W Rthj-a 4 130 120 ℃/W Maximum Thermal Resistance, Junction-ambient 1 201803021 AP3D2R6CMT CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=14A - - 8.2 mΩ VGS=4.5V, ID=7A - - 13 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 2.5 V gfs Forward Transconductance VDS=5V, ID=14A - 33 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - 100 nA Qg Total Gate Charge ID=7A - 7 11.2 nC Qgs Gate-Source Charge VDS=15V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 1 - nC td(on) Turn-on Delay Time VDS=15V - 9 - ns ID=14A - 48 - ns tr td(off) Turn-off Delay Time RG=3Ω - 17 - ns tf Fall Time VGS=10V - 2 - ns Ciss Input Capacitance VGS=0V - 1200 1920 pF Coss Output Capacitance VDS=15V Crss Rg - 270 - pF Reverse Transfer Capacitance . f=1.0MHz - 10 - pF Gate Resistance f=1.0MHz - 1 2 Ω Min. Typ. IS=14A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=14A, VGS=0V - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC 2 AP3D2R6CMT o CH-2 Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. VGS=0V, ID=250uA 30 - - V VGS=10V, ID=20A - - 2.4 mΩ VGS=4.5V, ID=12A - - 3 mΩ 1.1 - 2.5 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA Max. Units gfs Forward Transconductance VDS=5V, ID=20A - 86 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - 100 nA Qg Total Gate Charge ID=12A - 30 48 nC Qgs Gate-Source Charge VDS=15V - 11 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6.5 - nC td(on) Turn-on Delay Time VDS=15V - 11 - ns tr Rise Time ID=20A - 64 - ns td(off) Turn-off Delay Time RG=3Ω - 50 - ns tf Fall Time VGS=10V - 14 - ns Ciss Input Capacitance VGS=0V - 4300 6880 pF Coss Output Capacitance VDS=15V - 1050 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 34 - pF Rg Gate Resistance f=1.0MHz - 1.7 3.4 Ω Min. Typ. IS=20A, VGS=0V - - 1.2 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=20A, VGS=0V - 35 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 29 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, on steady-state 4.Surface mounted on Min. copper pad of FR4 board, on steady-state THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP3D2R6CMT Channel-1 40 30 10V 7.0V 6.0V 5.0V V G =4.0V ID , Drain Current (A) 30 10V 7.0V 6.0V 5.0V V G =4.0V o T A =150 C ID , Drain Current (A) o T A =25 C 20 20 10 10 0 0 0 0.4 0.8 1.2 1.6 2 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 16 I D =14A V G =10V I D =7A T A =25 o C 12 . 10 Normalized RDS(ON) RDS(ON) (mΩ) 14 1.6 1.2 0.8 8 0.4 6 2 4 6 8 -100 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 14 I D = 250uA 12 1.6 8 Normalized VGS(th) IS(A) 10 T j =25 o C T j =150 o C 6 1.2 0.8 4 0.4 2 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP3D2R6CMT Channel-1 8 f=1.0MHz 2000 1600 6 C iss C (pF) VGS , Gate to Source Voltage (V) I D =7A V DS =15V 4 1200 800 2 400 C oss C rss 0 0 0 4 8 12 1 16 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 33 37 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 ID (A) 10 . 1 100us 1ms 10ms 100ms 1s DC 0.1 T A =25 o C Single Pulse Normalized Thermal Response (Rthja) Duty factor = 0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x R thja + T a Rthja=130 oC/W 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 0.1 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 60 20 V DS =5V 50 ID , Drain Current (A) ID , Drain Current (A) 16 40 30 20 12 8 T j =150 o C 4 T j =25 o C 10 o T j = -55 C 0 0 0 1 2 3 4 5 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 12. Drain Current v.s. Ambient Temperature 5 AP3D2R6CMT Channel-2 80 80 10V 7.0V 6.0V 5.0V V G =4.0V 60 40 20 60 40 20 0 0 0 0.4 0.8 1.2 1.6 2 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 2.6 I D =20A V G =10V I D =12A T A =25 o C 1.8 . Normalized RDS(ON) 1.6 2.2 RDS(ON) (mΩ) 10V 7.0V 6.0V 5.0V V G =4.0V o T A =150 C ID , Drain Current (A) ID , Drain Current (A) T A =25 o C 1.2 0.8 1.4 0.4 1 2 4 6 8 -100 10 -50 0 50 100 150 T j , Junction Temperature (oC) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 20 I D = 250uA 16 Normalized VGS(th) 1.6 T j =25 o C T j =150 o C IS(A) 12 8 4 1.2 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP3D2R6CMT Channel-2 f=1.0MHz 8 8000 6 6000 C (pF) VGS , Gate to Source Voltage (V) I D =12A V DS =15V 4 2 C iss 4000 2000 C oss C rss 0 0 0 10 20 30 40 50 60 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 33 37 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 ID (A) 10 100us 1ms 10ms 1 . 100ms 0.1 T A =25 o C Single Pulse 1s DC Normalized Thermal Response (Rthja) Duty factor = 0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse Duty factor = t/T Peak Tj = PDM x R thja + T a Rthja=120 oC/W 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 0.1 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 100 V DS =5V 24 ID , Drain Current (A) ID , Drain Current (A) 80 60 40 T j =150 o C o T j =25 C 20 18 12 6 o T j = -55 C 0 0 0 1 2 3 4 5 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 12. Drain Current v.s. Ambient Temperature 7 AP3D2R6CMT MARKING INFORMATION Part Number 3D2R6C YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 8