NTLUD4C26N Power MOSFET 30 V, 7.3 A, Dual N−Channel, 2.0x2.0x0.55 mm mCoolt UDFN6 Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • Conduction Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving Ultra Low RDS(on) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications www.onsemi.com MOSFET RDS(on) MAX V(BR)DSS 21 mW @ 10 V 24 mW @ 4.5 V 26 mW @ 3.7 V 30 V • Power Load Switch • Wireless Charging • DC−DC Converters 36 mW @ 2.5 V 65 mW @ 1.8 V Parameter D1 Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±12 V ID 7.3 A Power Dissipation (Note 1) Continuous Drain Current (Note 2) 7.3 A 28 mW @ 3.3 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Continuous Drain Current (Note 1) ID MAX Steady State TA = 25°C TA = 85°C 5.3 t≤5s TA = 25°C 9.1 Steady State TA = 25°C t≤5s TA = 25°C Steady State TA = 25°C PD ID G2 S1 Dual N−Channel MOSFET 6 A 4.8 UDFN6 CASE 517BF mCOOLt 1 1 3.4 Power Dissipation (Note 2) TA = 25°C PD 0.72 W Pulsed Drain Current tp = 10 ms IDM 22 A TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 1) IS 3.0 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C S2 MARKING DIAGRAM W 1.70 2.63 TA = 85°C MOSFET Operating Junction and Storage Temperature G1 D2 AC MG G AC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2016 May, 2016 − Rev. 2 1 Publication Order Number: NTLUD4C26N/D NTLUD4C26N THERMAL RESISTANCE RATINGS Symbol Max Junction-to-Ambient – Steady State (Note 3) RθJA 73.6 Junction-to-Ambient – t ≤ 5 s (Note 3) RθJA 47.6 Junction-to-Ambient – Steady State min Pad (Note 4) RθJA 174.4 Parameter Unit °C/W 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V VGS(TH) VGS = VDS, ID = 250 mA V 7 TJ = 25°C mV/°C 1 TJ = 125°C mA 10 ±100 nA 1.1 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 0.6 2.8 mV/°C mW VGS = 10 V, ID = 6.0 A 17.5 21 VGS = 4.5 V, ID = 5.0 A 20 24 VGS = 3.7 V, ID = 3.0 A 21 26 VGS = 3.3 V, ID = 3.0 A 22 28 VGS = 2.5 V, ID = 2.0 A 25 36 VGS = 1.8 V, ID = 1.0 A 40 65 VDS = 1.5 V, ID = 5.0 A 23 S 460 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS VGS = 0 V, f = 1 MHz, VDS = 15 V CRSS Total Gate Charge QG(TOT) Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 225 27 VGS = 4.5 V, VDS = 10 V; ID = 5.0 A VGS = 4.5 V, VDS = 15 V; ID = 5.0 A 5.0 8.0 nC 5.5 9.0 nC 0.55 2.5 1.1 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 5 VGS = 4.5 V, VDD = 15 V, ID = 5.0 A, RG = 1 W tf ns 15 13 1.7 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTLUD4C26N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units 0.7 1.0 V DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 2.0 A TJ = 25°C TJ = 125°C 0.6 18.5 VGS = 0 V, dIs/dt = 100 A/ms, IS = 2.0 A QRR ns 9.3 9.1 7.8 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. DEVICE ORDERING INFORMATION Package Shipping† NTLUD4C26NTAG UDFN6 (Pb−Free) 3000 / Tape & Reel NTLUD4C26NTBG UDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 NTLUD4C26N TYPICAL CHARACTERISTICS 25 25 VDS = 5 V VGS = 1.8 V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25°C 10 V to 2.0 V 15 1.6 V 10 5 20 TJ = 125°C 15 TJ = 25°C 10 5 1.2 V TJ = −55°C 0 0 0 1 2 3 4 5 0 0.8 1.2 1.6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 30 2 50 TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) TJ = 25°C ID = 6 A 28 26 24 22 20 18 45 VGS = 1.8 V 40 35 30 VGS = 2.5 V VGS = 3.7 V 25 VGS = 3.3 V 20 15 16 2 3 4 5 6 7 8 9 1 10 3 5 7 9 11 13 VGS = 4.5 V VGS = 10 V 17 19 15 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 1.5 VGS = 10 V ID = 6 A 10000 1.3 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (Normalized) 0.4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.1 0.9 TJ = 150°C 1000 TJ = 125°C 100 10 1 TJ = 85°C VGS = 0 V 0 0.7 −50 −25 0 25 50 75 100 125 150 0 10 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTLUD4C26N TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) Ciss Coss 100 Crss TJ = 25°C VGS = 0 V f = 1 MHz 10 0 5 10 15 20 25 30 10 QT 25 8 20 6 15 4 Qgd Qgs 10 2 TJ = 25°C VDS = 15 V ID = 5 A 0 30 0 2 4 6 5 0 10 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 2.0 100.0 td(off) VDD = 15 V ID = 15 A VGS = 4.5 V VGS = 0 V IS, SOURCE CURRENT (A) tf tr t, TIME (ns) VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 1000 10.0 td(on) 1.0 1 10 100 TJ = −55°C TJ = 25°C 1.0 TJ = 125°C 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1.80 10 10 ms 100 ms 1 VGS < 10 V TA = 25°C Single Pulse Response 0.1 RDS(on) Limit Thermal Limit Package Limit 1 ms 1.20 1.00 0.80 0.60 10 ms 0.40 dc 0.20 0.01 0.00 0.1 ID = 250 mA 1.40 VGS(th), (V) ID, DRAIN CURRENT (A) 1.60 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 −50 Figure 11. Maximum Rated Forward Biased Safe Operating Area −25 0 25 50 75 100 TJ, TEMPERATURE (°C) 125 Figure 12. Threshold Voltage www.onsemi.com 5 150 175 NTLUD4C26N TYPICAL CHARACTERISTICS 400 350 POWER (W) 300 250 200 150 100 50 0 1.E−04 1.E−03 1.E−02 1.E−01 1.E+00 1.E+01 1.E+02 1.E+03 SINGLE PULSE TIME (°C) RqJA, EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) Figure 13. Single Pulse Maximum Power Dissipation 1000 50% Duty Cycle 100 20% 10 10% 5% 1 2% 0.1 1% 0.01 0.001 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 14. Thermal Response www.onsemi.com 6 1 10 100 1000 NTLUD4C26N PACKAGE DIMENSIONS UDFN6 2x2, 0.65P CASE 517BF ISSUE B D ÍÍÍ ÍÍÍ ÍÍÍ PIN ONE REFERENCE 0.10 C 0.10 C EXPOSED Cu PLATING DETAIL B L TOP VIEW A A3 0.08 C DIM A A1 A3 b D D2 E E2 e F K L L1 L L1 0.10 C DETAIL A OPTIONAL CONSTRUCTIONS A1 C SIDE VIEW SEATING PLANE B 1.74 D2 F D2 1 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.15 BSC 0.25 REF 0.30 0.20 --0.10 RECOMMENDED MOUNTING FOOTPRINT 0.10 C A DETAIL A MOLD CMPD OPTIONAL CONSTRUCTIONS E DETAIL B NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. ÉÉÉ ÇÇ ÇÇÇ ÇÇÇ ÉÉ A B 2X 0.77 3 1.10 6X 0.47 L E2 0.10 C A 2.30 B PACKAGE OUTLINE 6 K 4 6X b 0.10 C A e BOTTOM VIEW 0.05 C 1 B 6X 0.35 NOTE 3 0.65 PITCH DIMENSIONS: MILLIMETERS mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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