INCHANGE Semiconductor Schottky Barrier Rectifier MBR6060PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 60 V RMS Reverse Voltag 42 V IF(AV) Average Rectified Forward Current 60 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 420 A IRRM Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 1.0 A Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 1,000 V/μs VRRM VRWM VR VR(RMS) TJ PARAMETER isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Schottky Barrier Rectifier MBR6060PT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 1.2 ℃/W MAX UNIT ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL VF IR PARAMETER Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current isc website：www.iscsemi.com CONDITIONS IF= 30A ; Tc= 25℃ 0.75 IF= 30A ; Tc= 125℃ 0.65 IF= 60A ; Tc= 125℃ 0.93 VR= VRWM;Tc= 25℃ 1.0 VR= VRWM;Tc= 125℃ 10 2 V mA isc & iscsemi is registered trademark