PD - 95316
IRFL1006PbF
HEXFET® Power MOSFET
Surface Mount
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
D
VDSS = 60V
RDS(on) = 0.22Ω
G
ID = 1.6A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Units
2.3
1.6
1.3
6.4
2.1
1.0
8.3
± 20
54
1.6
0.1
5.0
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
90
50
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
1
05/26/04
IRFL1006PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
60
––– –––
V
VGS = 0V, ID = 250µA
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.22
Ω
VGS = 10V, ID = 1.6A 2.0
––– 4.0
V
VDS = VGS, ID = 250µA
3.0
––– –––
S
VDS = 25V, ID = 1.6A
––– ––– 25
VDS = 60V, VGS = 0V
µA
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 125°C
––– ––– 100
VGS = 20V
nA
––– ––– -100
VGS = -20V
––– ––– 8.0
ID = 1.6A
––– ––– 1.7
nC
VDS = 48V
––– ––– 3.3
VGS = 10V, See Fig. 6 and 9 –––
7.4 –––
VDD = 30V
–––
18 –––
ID = 1.6A
ns
–––
18 –––
RG = 49Ω
–––
17 –––
RD = 19Ω, See Fig. 10 ––– 160 –––
VGS = 0V
–––
55 –––
pF
VDS = 25V
–––
19 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 1.6
showing the
A
integral reverse
––– ––– 6.4
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 1.6A, VGS = 0V ––– 31
47
ns
TJ = 25°C, I F = 1.6A
––– 46
68
nC
di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 42 mH
ISD ≤ 1.6A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 1.6A. (See Figure 12)
2
www.irf.com
IRFL1006PbF
10
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
4.5V
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
1
10
4.5V
1
0.1
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
1
V DS = 25V
20µs PULSE WIDTH
5.0
6.0
7.0
Fig 3. Typical Transfer Characteristics
www.irf.com
10
100
Fig 2. Typical Output Characteristics
10
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
0.1
4.0
20µs PULSE WIDTH
TJ = 150 ° C
8.0
ID = 1.6A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFL1006PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
240
Ciss
180
120
Coss
60
Crss
0
1
10
20
VGS , Gate-to-Source Voltage (V)
300
ID = 1.6A
VDS = 48V
VDS = 30V
VDS = 12V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
6
8
10
100
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
4
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2
QG , Total Gate Charge (nC)
1.2
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRFL1006PbF
2.0
VDS
ID , Drain Current (A)
VGS
1.5
RD
D.U.T.
RG
+
- VDD
10V
1.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
0.5
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
t1
0.01
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
IRFL1006PbF
140
ID
0.72A
1.0A
BOTTOM 1.6A
TOP
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
QGD
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRFL1006PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRFL1006PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
FL014
314P
TOP
8
LOT CODE
AXXXX
A = ASSEMBLY SITE
DATE CODE
CODE
(YYWW)
YY = YEAR
WW = WEEK
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
BOTTOM
www.irf.com
IRFL1006PbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
14.40 (.566)
12.40 (.488)
18.40 (.724)
MAX.
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/04
www.irf.com
9