APL602B2 APL602L 600V 49A 0.125Ω B2 LINEAR MOSFET T-MAX™ TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). L • Higher FBSOA • Popular T-MAX™ or TO-264 Package • Higher Power Dissipation D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APL602B2-L UNIT 600 Volts 49 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 730 Watts Linear Derating Factor 5.84 W/°C PD TJ,TSTG 196 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 49 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 600 Volts ID(ON) On State Drain Current 49 Amps IDSS IGSS VGS(TH) (VDS > ID(ON) x R DS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 MAX 0.125 (VGS = 12V, 24.5A) Zero Gate Voltage Drain Current (VDS = 600v, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 250 (VDS = VGS, ID = 2.5mA) ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Ohms µA Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage UNIT 8-2003 RDS(ON) 2 TYP 050-5894 Rev E Symbol APL602B2-L DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 7485 9000 Coss Output Capacitance VDS = 25V 1290 1810 Reverse Transfer Capacitance f = 1 MHz 617 930 Turn-on Delay Time VGS = 15V 13 26 Crss td(on) tr td(off) tf Rise Time Turn-off Delay Time Fall Time VDD = 300V 27 54 ID = 49A @ 25°C 56 84 RG = 0.6Ω 16 20 TYP MAX UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case .17 RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 2.50mH, R = 25Ω, Peak I = 49A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.18 0.9 0.14 0.7 0.12 0.10 0.5 Note: 0.08 0.06 PDM ZΘJC, THERMAL IMPEDANCE (°C/W) 0.16 0.3 t2 0.04 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.02 SINGLE PULSE 0.05 0 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION RC MODEL Junction temp. ( ”C) 0.0575 0.0187F 0.113 0.358F 8-2003 Power (Watts) 050-5894 Rev E t1 Case temperature FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL 1.0 UNIT °C/W Typical Performance Curves 120 APL602B2-L 120 VGS=10V, 15 V 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 5.5 V 5.5 V 0 0 60 40 TJ = +125°C 20 TJ = -55°C TJ = +25°C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 1.30 1.15 NORMALIZED TO = 10V @ 29A V GS 1.20 VGS=10V 1.10 1.00 0.90 VGS=20V 0.80 0.70 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 8-2003 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) (NORMALIZED) 80 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 050-5894 Rev E ID, DRAIN CURRENT (AMPERES) 100 ID, DRAIN CURRENT (AMPERES) VGS=10, 15V APL602B2-L 1.2 D = 12V 2.0 1.5 1.0 0.5 1.1 1.0 0.9 0.8 0.7 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 196 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 30,000 OPERATION HERE LIMITED BY RDS (ON) 100 ID, DRAIN CURRENT (AMPERES) = 24.5A GS VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I V 50 10,000 100µS 10 1mS 5 10mS 100mS 1 TC =+25°C TJ =+150°C SINGLE PULSE .1 C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 DC Line 5,000 Coss 1,000 Crss 500 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) Ciss TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 050-5894 Rev E 8-2003 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 25.48 (1.003) 26.49 (1.043) 19.81 (.780) 21.39 (.842) Gate Drain Source 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source