D45C11 PNP Current Driver Transistor Features • This device is designed for power amplifier, regulator and switching circuits where speed is important. • Sourced from Process 5P. • NZT751 for characteristics. 1 TO-220 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol VCEO IC TJ, TSTG Value Units Collector-Emitter Voltage Parameter -80 V Collector Current -4.0 A -55 to +150 °C - Continuous Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA=25°C unless otherwise noted Symbol PD Parameter Total Device Dissipation Derate above 25°C Max. Units 60 480 W mW/°C RθJC Thermal Resistance, Junction to Case 2.1 °C/W RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W © 2009 Fairchild Semiconductor Corporation D45C11 Rev. B2 www.fairchildsemi.com 1 D45C11 — PNP Current Driver Transistor January 2010 Symbol TA=25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0 -80 V ICES Collector-Cutoff Current VCE = -90V, IE = 0 -10 μA IEBO Emitter-Cutoff Current VEB = -5.0V, IB = 0 -100 μA On Characteristics 40 20 120 DC Current Gain VCE = -1.0V, IC = -0.2A VCE = -1.0V, IC = -1.0A VCE (sat) Collector-Emitter Saturation Voltage IC = -1.0A, IB = -50mA -0.5 V VBE (sat) Base-Emitter Saturation Voltage IC = -1.0A, IB = -100mA -1.3 V Output Capacitance VCB = -10V, f = 1.0MHz 125 pF Current Gain - Bandwidth Product IC = -20mA, VCE = -4.0V hFE Small Signal Characteristics Cob fT © 2009 Fairchild Semiconductor Corporation D45C11 Rev. B2 32 MHz www.fairchildsemi.com 2 D45C11 — PNP Current Driver Transistor Electrical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® ® Fairchild Semiconductor FACT Quiet Series™ FACT® ® FAST FastvCore¥ FETBench¥ FlashWriter®* FPS¥ F-PFS¥ FRFET® SM Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM® STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ ® UHC Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com