Fairchild D45C11 Pnp current driver transistor Datasheet

D45C11
PNP Current Driver Transistor
Features
• This device is designed for power amplifier, regulator and switching
circuits where speed is important.
• Sourced from Process 5P.
• NZT751 for characteristics.
1
TO-220
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
VCEO
IC
TJ, TSTG
Value
Units
Collector-Emitter Voltage
Parameter
-80
V
Collector Current
-4.0
A
-55 to +150
°C
- Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol
PD
Parameter
Total Device Dissipation
Derate above 25°C
Max.
Units
60
480
W
mW/°C
RθJC
Thermal Resistance, Junction to Case
2.1
°C/W
RθJA
Thermal Resistance, Junction to Ambient
62.5
°C/W
© 2009 Fairchild Semiconductor Corporation
D45C11 Rev. B2
www.fairchildsemi.com
1
D45C11 — PNP Current Driver Transistor
January 2010
Symbol
TA=25°C unless otherwise noted
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0
-80
V
ICES
Collector-Cutoff Current
VCE = -90V, IE = 0
-10
μA
IEBO
Emitter-Cutoff Current
VEB = -5.0V, IB = 0
-100
μA
On Characteristics
40
20
120
DC Current Gain
VCE = -1.0V, IC = -0.2A
VCE = -1.0V, IC = -1.0A
VCE (sat)
Collector-Emitter Saturation Voltage
IC = -1.0A, IB = -50mA
-0.5
V
VBE (sat)
Base-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
-1.3
V
Output Capacitance
VCB = -10V, f = 1.0MHz
125
pF
Current Gain - Bandwidth Product
IC = -20mA, VCE = -4.0V
hFE
Small Signal Characteristics
Cob
fT
© 2009 Fairchild Semiconductor Corporation
D45C11 Rev. B2
32
MHz
www.fairchildsemi.com
2
D45C11 — PNP Current Driver Transistor
Electrical Characteristics
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Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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