BSP52 BSP52 NPN Darlington Transistor 4 • This device is designed for applications requiring extremly high current gain at collector currents to 500mA. • Sourced from process 03. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage Value 80 VCBO Collector-Base Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ +150 °C - Continuous Units V * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Conditions Min. Typ. Max. Units V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 90 V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V ICES Collector Cutoff Current VCE = 80V, VBE = 0 10 µA IEBO Emitter Cutoff Current VEB = 4.0V, IC = 0 10 µA V On Characteristics hFE DC Current Gain IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 0.5mA 1.3 V VBE(sat) Base-Emitter Saturation Voltage IC = 500mA, IB = 0.5mA 1.9 V 1000 2000 Thermal Characteristics TA=25°C unless otherwise noted PD Symbol Parameter Total Device Dissipation Derate above 25°C Max. 1000 8.0 Units mW mW/°C RθJA Thermal Resistance, Junction to Ambient 125 °C/W ©2002 Fairchild Semiconductor Corporation Rev. A, June 2002 BSP52 Package Demensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, June 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H7